Abstract:
Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.
Abstract:
Systems, devices, and methods for interconnects for a multi-die package are described. A multi-die package may include a set of conductive pillars and two or more semiconductor dice that each include a bond pad. In some cases, the multi-die package may include a plurality of pillar-wire combinations, and a bond wire may couple a corresponding conductive pillar with a corresponding bond pad. Pillar-wire combinations may each collectively have a matched impedance, or pillar-wire combinations in different groups may have different collective impedances. In other cases, a conductive pillar may be directly coupled with a corresponding bond pad without a bond wire. Different pillar-wire combinations or directly-coupled pillars may carry different signals. In some cases, pillars may be individually impedance-matched to a desired impedance.
Abstract:
Methods, systems, and devices for system-level timing budget improvements are described. Each memory die in a memory device may determine an offset between its system clock signal and its data clock signal. The offsets of each memory die in the memory device may be different; e.g., having different magnitudes and/or polarities. A memory die in the memory device may adjust its own data clock signal by a delay that is based on the offsets of two or more memory die in the device. The memory die may adjust its data clock signal by setting a fuse in a delay adjuster on the memory die. Adjusting the data clock signal may match an offset of a first memory die with an offset of a second memory die.
Abstract:
Methods, systems, and devices for a low-speed memory operation are described. A controller associated with a memory device may, for example, identify a clock mode for a system clock and determine that a speed of the system clock is below a threshold. The controller may generate (or cause to be generated) an internal data clock signal having a shorter period than an external data clock signal (which may have a speed based on the system clock speed). Also, the controller may use, instead of the external data clock signal, the internal data clock signal to generate data from the memory device, which may provide reduced latency. Further, the controller may deactivate (or cause to be deactivated) an external data clock that generates the external data clock signal. Such techniques may provide improved data bandwidth, improved command bandwidth, and/or reduced power consumption.
Abstract:
Apparatuses and methods including memory commands for semiconductor memories are described. An example method includes receiving a data clock signal responsive to receiving a timing command, performing an access operation responsive to receiving an access command associated with the timing command, providing an access data clock signal based on the data clock signal, and providing an access data clock signal based on the data clock signal. The access command may be separated in time from the associated timing command by at least one clock cycle of a system clock signal. In some examples, the access command may precede the associated timing command or may follow the associated timing command. In some examples, the access command may immediately follow or precede the associated timing command.
Abstract:
Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.
Abstract:
An input-output line sense amplifier configured to drive input data signals over an input-output signal line to an output driver circuit, the input-output line sense amplifier having an output driver stage having a plurality of different programmable output drive capacities to tailor the output drive of the sense amplifier.
Abstract:
This document describes apparatuses and techniques for an efficient command protocol for memory access. In various aspects, a memory controller may implement combined operations of different command types (e.g., an activation command plus a read, an activation command plus a write, or an activation command plus a pre-charge command) to better utilize a multiple clock ratio of a command bus (e.g., a (1.5+0.5) N operation in a dual clocking WCK2CK ratio of 4:1), which may improve utilization of a data bus for associated memory responses. By so doing, the efficient command protocol may improve power efficiency and system level performance of a computing system.
Abstract:
Described apparatuses and methods facilitate bus training with multiple dice, such as multiple memory dice. A controller can communicate with multiple dice to perform bus training by sending a test pattern and receiving in return a feedback pattern indicative of the bits detected by the dice. Because suitable signal timing can differ between dice, even those using the same bus, a controller may train each die separately from the others. In some situations, however, individualized training may be infeasible. To accommodate such situations, logic associated with two or more dice can combine, using at least one logical operation, bits as detected from the test pattern into a combined feedback pattern. A timing parameter that is jointly suitable for multiple dice can be determined, and the bus training may be concluded, responsive to the combined feedback pattern matching the test pattern. The multiple dice may be stacked or linked.
Abstract:
Described apparatuses and methods relate to adaptive memory registers for a memory system that may support a nondeterministic protocol. To help manage power-delivery networks in a memory system, a device includes logic that can write values to memory registers associated with memory blocks of a memory array. The values indicate whether an associated memory block has been refreshed within a refresh interval. Other logic can read the registers to determine whether a block has been refreshed. The device also includes logic that can access data indicating a row address that was most recently, or is next to be, refreshed and write values representing the address to another register. The register can be read by other logic to determine whether a wordline potentially affected by an activation-based disturb event is near to being refreshed. These techniques can reduce the number of refresh operations performed, saving power and reducing costs.