Abstract:
An apparatus and method for operating a sense amplifier connecting/disconnecting circuit arrangement, in particular for a semiconductor memory device, including a switching device for connecting/disconnecting a sense amplifier to/from a bit line of a first cell field region, and for connecting/disconnecting the sense amplifier to/from from a bit line of a second cell field region, as a function of the state of control signals applied at control lines. Driver devices drive the control signal. Additional switches change the state of the control signals.
Abstract:
Method of controlling a driver strength and a termination impedance of a signal line of an interface, wherein the driver sends an output signal as an alternating voltage with a frequency, wherein the signal line is terminated with a termination impedance, wherein the driver strength is changed depending on a changing of the frequency of the output signal.
Abstract:
The invention relates to a memory with a memory array with memory cells, with an input/output circuit which is connected to the memory cells and which interchanges data with the memory cells, with an output register which is connected to the input/output circuit, with the output register being used to output data via a data output, having an input register which is connected to a data input and to the input/output circuit, with the data input and the input register being used to input data into the memory cells, with test data being written to the output register in a test mode. The invention furthermore relates to a process for testing a memory and to a memory module.
Abstract:
The invention relates to a clock signal synchronizing method, and to a clock signal synchronizing device (101) to be used with the synchronization of clock signals (CLK, DQS), comprising: a delay means (102) with a variably controllable delay time (tvar), in which a clock signal (CLK) or a signal obtained therefrom is input, is loaded with the variably controllable delay time (tvar), and is output as delayed clock signal, a phase comparator (104) for comparing the phase of the clock signal (CLK) or of the signal obtained therefrom with the phase of the delayed clock signal or of a signal obtained therefrom (DCLK, FB), characterized in that additionally a means (401, 116) is provided for activating and/or deactivating said clock signal synchronizing device (101) as a function of control signals (RD) evaluated by an evaluating means (402).
Abstract translation:本发明涉及一种时钟信号同步方法以及与时钟信号(CLK,DQS)的同步一起使用的时钟信号同步装置(101),包括:具有可变可控延迟时间的延迟装置(102) 其中输入了时钟信号(CLK)或从其获得的信号)被加载了可变可控延迟时间(t> var SUB>),并被输出 作为延迟时钟信号,用于将时钟信号(CLK)的相位或由其获得的信号与延迟的时钟信号的相位或从其获得的信号(DCLK,FB)进行比较的相位比较器(104),其特征在于 另外还提供了一种用于根据由评估装置(402)评估的控制信号(RD)来激活和/或去激活所述时钟信号同步装置(101)的装置(401,116)。
Abstract:
A method for operating a semiconductor memory device is disclosed. In one embodiment, the method includes activating a first memory cell sub-array or memory cells of the first memory cell sub-array that are contained in a first set of memory cells, in particular of memory cells positioned in one and the same row or column of the first memory cell sub-array, if one or a plurality of memory cells contained in the first memory cell sub-array or in the first set of memory cells is/are to be accessed. The corresponding memory cell or memory cells are accessed; including leaving the first memory cell sub-array or the memory cells of the first memory cell sub-array that are contained in the first set of memory cells in the activated state if one or a plurality of further memory cells is/are to be accessed which are contained in a second memory cell sub-array of the same memory cell array that comprises the first memory cell sub-array.
Abstract:
The invention involves a voltage converter device (101a, 101b) for converting a signal (in) at an initial voltage level (vint) into a signal (DatoV) at a second voltage level (vint) differing from the first, in which voltage converter device (101a, 101b) has an amplifier device (102), and where the amplifier device (102) uses a second amplifier device output signal (bout) to generate signals (DatoV) at the second voltage level (vddq).
Abstract:
The invention relates to a method for operating a sense amplifier connecting/disconnecting circuit arrangement, and to a sense amplifier connecting/disconnecting circuit arrangement, in particular for a semiconductor memory device, including a switching device for connecting a sense amplifier device to a bit line or to a cell field region, respectively, and for disconnecting the sense amplifier device from the bit line or from the cell field region, respectively, as a function of the state of a control signal applied at a control line; a driver device for driving the control signal, wherein an additional device, in particular an additional switch is provided, by means of which a change of state of the control signal applied at the control line can be effected.
Abstract:
The invention relates to a semi-conductor memory component and process for operating a semi-conductor memory component, including activating the memory cells of a memory cell array, when one or several memory cell(s) included in the first set of memory cells need(s) to be accessed, accessing the corresponding memory cell or memory cells, deactivating the memory cells contained in a first set of memory cells, when one or several further memory cells that are not included in the first set of memory cells need(s) to be accessed, and prematurely deactivating the memory cells included in the first set of memory cells, when a predetermined time period or number of pulses after one or several memory cells included in the first set of memory cells have last been accessed first no further accessing of one or several of the memory cells included in the first set of memory cells takes place.
Abstract:
An apparatus for generating two signals having a predetermined spacing between mutually corresponding signal edges includes first and second delay devices for delaying a clock signal and a complementary clock signal in response to respective first and second control signals. A first control signal generator generates the first control signal on the basis of the clock signal and the delayed clock signal. A second control signal generator generates the second control signal on the basis of the delayed clock signal and the delayed complementary clock signal. The second control signal generator causes the delayed clock signal and the delayed complementary clock signal to have a steady-state condition in which mutually corresponding edges thereof are separated by a pre-determined spacing.
Abstract:
Programmable voltage pump for producing an output voltage includes a trim input configured to set the output voltage, an output configured to emit the output voltage therefrom, and an activation/deactivation input configured to at least one of activate and deactivate the voltage pump. The activation/deactivation input includes a switch connected to the output, the switch configured to selectively connect a network to ground, the network being connected to the output.