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150 条记录 (耗时 0.026 秒)

    Semiconductor integrated circuit device with copy-preventive function
    73.
    发明授权
    Semiconductor integrated circuit device with copy-preventive function 失效
    具有防复制功能的半导体集成电路器件

    公开(公告)号：US5781627A

    公开(公告)日：1998-07-14

    申请号：US509641

    申请日：1995-07-31

    申请人： Nobuo Ikuta ,  Kouji Ueno ,  Kouji Shishido ,  Yutaka Fukutani ,  Youji Arayama ,  Tomohiro Nakayama ,  Takanori Shiga ,  Masakazu Kimura ,  Hiroyuki Fujimoto ,  Yoshiyuki Fujita

    发明人： Nobuo Ikuta ,  Kouji Ueno ,  Kouji Shishido ,  Yutaka Fukutani ,  Youji Arayama ,  Tomohiro Nakayama ,  Takanori Shiga ,  Masakazu Kimura ,  Hiroyuki Fujimoto ,  Yoshiyuki Fujita

    IPC分类号： G06F12/14 ,  G11C8/20 ,  G11B23/28

    CPC分类号： G11C8/20 ,  G06F12/1408

    摘要： A semiconductor integrated circuit device with a copy-preventive function comprises a memory for storing data to be used by users, an input unit for performing various logical operations on at least one input information fed externally and accessing the memory, an output unit for performing various logical operations on the data at the time of supplying the data from the memory, a judging unit for comparing at least one of the state of the input information, the logical state of the input unit, the logical state of the output unit, and the state of data provided by the output unit with specific judgment information and indicating the result of comparison, and a control unit that when the result indicated by the judging unit reveals that the at least one of the states is consistent with a specific state, acts at least on the output unit so as to prevent data stored in the memory from being supplied normally. Due to this configuration, a copy-preventive function can be reformed frequently from both the aspects of software and hardware. Consequently, illegal copying of data can be substantially disabled.

    摘要翻译： 具有防复制功能的半导体集成电路器件包括用于存储要由用户使用的数据的存储器，用于对外部馈送的至少一个输入信息执行各种逻辑运算并访问存储器的输入单元，用于执行各种 在从存储器提供数据时对数据进行逻辑运算，判断单元，用于比较输入信息的状态，输入单元的逻辑状态，输出单元的逻辑状态和输出单元的逻辑状态中的至少一个， 由输出单元提供的具有特定判断信息并指示比较结果的数据状态;以及控制单元，当判断单元指示的结果显示该至少一个状态与特定状态一致时， 至少在输出单元上，以防止存储在存储器中的数据被正常地提供。 由于这种配置，可以从软件和硬件的方面频繁地改变防复制功能。 因此，可以基本上禁用非法复制数据。

    Liquid fluorocarbon and a method for producing the same
    75.
    发明授权
    Liquid fluorocarbon and a method for producing the same 失效
    液体碳氟化合物及其制备方法

    公开(公告)号：US4950814A

    公开(公告)日：1990-08-21

    申请号：US427419

    申请日：1989-10-26

    申请人： Toshiyuki Maeda ,  Akihiro Mabuchi ,  Hiroyuki Fujimoto

    发明人： Toshiyuki Maeda ,  Akihiro Mabuchi ,  Hiroyuki Fujimoto

    IPC分类号： C07C17/00 ,  C10C3/02

    CPC分类号： C07C17/00 ,  C10C3/023

    摘要： Disclosed is a novel fluorocarbon comprising carbon atoms and fluorine atoms and having no double bond, the atomic ratio of fluorine to carbon atoms being 1.50 to 1.93, which exhibits a liquid state at room temperature. The liquid fluorocarbon has excellent water- and oil-repellent properties and can advantageously be used, for example, not only as a water- and oil-repellent but also as an inert liquid, a heat transfer agent and a vapor phase soldering liquid in various fields, especially in the electronic industry. The liquid fluorocarbon can be obtained directly from a pitch or from a pitch fluoride which can be obtained by direct fluorination of a pitch.

    Vehicle
    77.
    发明授权
    Vehicle 有权
    车辆

    公开(公告)号：US08725376B2

    公开(公告)日：2014-05-13

    申请号：US12758075

    申请日：2010-04-12

    申请人： Naoki Murota ,  Hiroyuki Fujimoto ,  Hiroshi Kawamura

    发明人： Naoki Murota ,  Hiroyuki Fujimoto ,  Hiroshi Kawamura

    IPC分类号： G06F19/00

    CPC分类号： B60K23/04 ,  B60K23/08 ,  B60K35/00 ,  B60K37/06 ,  B60K2350/102 ,  B60K2350/1024 ,  B60K2350/35

    摘要： A vehicle can be operated in a first drive mode in which a front differential is set to a non-driven state and a rear differential is set to a differential state, a second drive mode in which the front differential is set to a non-driven state and the rear differential is set to a differential locked state, a third drive mode in which the front differential is set to a differential state and the rear differential is set to a differential locked state, and a fourth drive mode in which the front differential is set to a differential locked state and the rear differential is set to a differential locked state. Transition is allowed only between adjacent drive modes.

    摘要翻译： 车辆可以在其中前差速器被设定为非驱动状态并且后差速器被设定为差速状态的第一驱动模式中操作，第二驱动模式将前差速器设定为非驱动 并且后差速器被设定为差速锁定状态，其中前差速器被设置为差速状态并且后差速器被设置为差速锁定状态的第三驱动模式，以及第四驱动模式，其中前差速器 设定为差速锁定状态，后差速器被设定为差动锁定状态。 仅在相邻驱动模式之间才允许转换。

    Method of forming a semiconductor device
    78.
    发明授权
    Method of forming a semiconductor device 有权
    形成半导体器件的方法

    公开(公告)号：US08409955B2

    公开(公告)日：2013-04-02

    申请号：US12964777

    申请日：2010-12-10

    申请人： Hiroyuki Fujimoto

    发明人： Hiroyuki Fujimoto

    IPC分类号： H01L21/336

    CPC分类号： H01L27/10876 ,  H01L27/0207

    摘要： A method of forming a semiconductor device includes the following processes. A groove is formed in a semiconductor substrate. A gate insulating film is formed on an inside wall of the groove. A buried gate electrode is formed on the gate insulating film and on a bottom portion of the groove. A cap insulating film covering the buried gate electrode is formed in an upper portion of the groove. The cap insulating film has a top surface which is different in level from a top surface of the semiconductor substrate. A first inter-layer insulating film is formed on the top surface of the semiconductor substrate and on the top surface of the cap insulating film. The first inter-layer insulating film with a flat top surface fills a gap in level between the top surface of the semiconductor substrate and the top surface of the cap insulating film.

    摘要翻译： 形成半导体器件的方法包括以下处理。 在半导体衬底中形成凹槽。 栅极绝缘膜形成在槽的内壁上。 掩模栅极形成在栅极绝缘膜上和沟槽的底部。 覆盖掩埋栅电极的帽绝缘膜形成在槽的上部。 帽绝缘膜具有与半导体衬底的顶表面不同的顶表面。 第一层间绝缘膜形成在半导体衬底的顶表面和帽绝缘膜的顶表面上。 具有平坦顶表面的第一层间绝缘膜填充半导体衬底的顶表面和帽绝缘膜的顶表面之间的间隙。

    Composite negative electrode active material and non-aqueous electrolyte secondary battery
    79.
    发明授权
    Composite negative electrode active material and non-aqueous electrolyte secondary battery 有权
    复合负极活性物质和非水电解质二次电池

    公开(公告)号：US08399131B2

    公开(公告)日：2013-03-19

    申请号：US12602560

    申请日：2008-06-02

    申请人： Yoshiyuki Ozaki ,  Hiroyuki Fujimoto

    发明人： Yoshiyuki Ozaki ,  Hiroyuki Fujimoto

    IPC分类号： H01M4/13

    CPC分类号： H01M4/587

    摘要： Disclosed is a composite negative electrode active material including a graphitizable carbon material containing a layered structure formed of stacked carbon layers partially having a three-dimensional regularity, and a low crystalline carbon material. A negative electrode including the composite negative electrode active material is used to produce a non-aqueous electrolyte secondary battery. The non-aqueous electrolyte secondary battery thus produced has a high energy density and demonstrates a high output/input performance for a long period of time in various environments of high to low temperatures.

    摘要翻译： 公开了一种复合负极活性物质，其包含含有部分具有三维规则性的堆叠碳层形成的层状结构的石墨化碳材料和低结晶性碳材料。 使用包含复合负极活性物质的负极来制造非水电解质二次电池。 由此制造的非水电解质二次电池具有高能量密度，并且在高低温的各种环境中长时间表现出高的输出/输入性能。