公开(公告)号：US20090081815A1

公开(公告)日：2009-03-26

申请号：US11859507

申请日：2007-09-21

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundararajan

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundararajan

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32422 ,  H01L22/12 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention can provide a method of processing a substrate using S-O processing sequences and evaluation libraries that can include one or more optimized spacer creation and evaluation procedures.

Abstract translation: 本发明可以提供使用S-O处理序列处理衬底的方法以及可以包括一个或多个优化的间隔物产生和评估程序的评估库。

公开(公告)号：US20080227227A1

公开(公告)日：2008-09-18

申请号：US11684818

申请日：2007-03-12

Applicant: Radha Sundararajan ,  Lee Chen ,  Merritt Funk

Inventor： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

IPC: H01L21/306 ,  H01L21/66

CPC classification number: H01L22/20

Abstract: A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.

Abstract translation: 提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。 优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。 例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。 支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性 。

公开(公告)号：US07328418B2

公开(公告)日：2008-02-05

申请号：US11046903

申请日：2005-02-01

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel Prager

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel Prager

IPC: G06F17/50 ,  G06F9/45

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Abstract translation: 该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征 需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。

公开(公告)号：US07305322B2

公开(公告)日：2007-12-04

申请号：US11396112

申请日：2006-03-31

Applicant: Merritt Funk ,  Daniel Prager

Inventor： Merritt Funk ,  Daniel Prager

IPC: G01B7/00 ,  G01B11/02

CPC classification number: G01R31/307 ,  G01R31/2846

Abstract: To determine the profile of an integrated circuit structure, a signal is measured off the structure with a metrology device. The measured signal is compared to signals in a virtual profile library. The comparison is stopped if matching criteria are met. A subset of a virtual profile data space is determined when the matching criteria are not met. The subset is determined using profile data space associated with the library. A virtual profile signal of the subset is selected. Virtual profile shape/parameters are determined based on the virtual profile signal. A difference is calculated between the measured and virtual profile signals. The difference is compared to virtual profile library creation criteria. If the criteria are met, then the structure is identified using virtual profile data, which includes the virtual profile shape/parameters, associated with the virtual profile signal. Or, if the criteria are not met, then a corrective action is applied.

Abstract translation: 为了确定集成电路结构的轮廓，使用测量装置测量结构的信号。 将测量的信号与虚拟简档库中的信号进行比较。 如果符合匹配条件，则比较停止。 当匹配条件不满足时确定虚拟简档数据空间的子集。 使用与库相关联的简档数据空间确定子集。 选择该子集的虚拟简档信号。 基于虚拟轮廓信号确定虚拟轮廓形状/参数。 在测量和虚拟简档信号之间计算差异。 将差异与虚拟简档库创建标准进行比较。 如果满足标准，则使用与虚拟简档信号相关联的虚拟简档数据（包括虚拟简档形状/参数）来识别结构。 或者，如果不符合标准，则应用纠正措施。

公开(公告)号：US20070239383A1

公开(公告)日：2007-10-11

申请号：US11394860

申请日：2006-03-31

Applicant: Merritt Funk ,  Daniel Prager

Inventor： Merritt Funk ,  Daniel Prager

IPC: G06F19/00

CPC classification number: G01N21/4788

Abstract: A method of refining a virtual profile library includes obtaining a reference signal measured off a reference structure on a semiconductor wafer with a metrology device. A best match is selected of the reference signal in a virtual profile data space. The virtual profile data space has data points with specified accuracy values. The data points represent virtual profile parameters and associated virtual profile signals. The virtual profile parameters characterize the profile of an integrated circuit structure. The best match being a data point of the profile data space with a signal closest to the reference signal. Refined virtual profile parameters are determined corresponding to the reference signal based on the virtual profile parameters of the selected virtual profile signal using a refinement procedure.

Abstract translation: 精细虚拟简档库的方法包括：使用测量装置获得在半导体晶片上的参考结构测量的参考信号。 在虚拟简档数据空间中选择参考信号的最佳匹配。 虚拟配置文件数据空间具有指定精度值的数据点。 数据点表示虚拟轮廓参数和相关联的虚拟轮廓信号。 虚拟轮廓参数表征集成电路结构的轮廓。 最佳匹配是具有最接近参考信号的信号的简档数据空间的数据点。 使用细化过程，基于所选虚拟简档信号的虚拟简档参数，对应于参考信号来确定精细虚拟简档参数。

公开(公告)号：US07158851B2

公开(公告)日：2007-01-02

申请号：US10609129

申请日：2003-06-30

Applicant: Merritt Funk

Inventor： Merritt Funk

IPC: G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/31265 ,  G05B2219/32195 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/26

Abstract: A method of using a run-to-run (R2R) controller to provide wafer-to-wafer (W2W) control in a semiconductor processing system is provided. The R2R controller includes a feed-forward (FF) controller, a process model controller, a feedback (FB) controller, and a process controller. The R2R controller uses feed-forward data, modeling data, feedback data, and process data to update a process recipe on a wafer-to-wafer time frame.

Abstract translation: 提供了一种使用运行（R2R）控制器在半导体处理系统中提供晶圆到晶片（W2W）控制的方法。 R2R控制器包括前馈（FF）控制器，过程模型控制器，反馈（FB）控制器和过程控制器。 R2R控制器使用前馈数据，建模数据，反馈数据和过程数据来更新晶圆到晶片时间框架上的工艺配方。

公开(公告)号：US20060042543A1

公开(公告)日：2006-03-02

申请号：US10927514

申请日：2004-08-27

Applicant: Merritt Funk ,  Wesley Natzle

Inventor： Merritt Funk ,  Wesley Natzle

IPC: B05C11/00

CPC classification number: H01L22/20 ,  G05B2219/45031

Abstract: The invention relates to controlling a semiconductor processing system. Among other things, the invention relates to a run-to-run controller to create virtual modules to control a multi-pass process performed by a multi-chamber tool during the processing of a semiconductor wafer.

Abstract translation: 本发明涉及控制半导体处理系统。 其中，本发明涉及一种运行到运行的控制器，用于创建虚拟模块以控制在半导体晶片的处理期间由多室工具执行的多遍处理。

公开(公告)号：US10395903B2

公开(公告)日：2019-08-27

申请号：US15983532

申请日：2018-05-18

Applicant: Zhiying Chen ,  Lee Chen ,  Merritt Funk

Inventor： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC: H01J37/32 ,  C23C16/50 ,  H01J37/30

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US20180269041A1

公开(公告)日：2018-09-20

申请号：US15983532

申请日：2018-05-18

Applicant: Zhiying Chen ,  Lee Chen ,  Merritt Funk

Inventor： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC: H01J37/32 ,  H01J37/30

CPC classification number: H01J37/32899 ,  H01J37/30 ,  H01J37/32082 ,  H01J37/3233

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US09087677B2

公开(公告)日：2015-07-21

申请号：US13433078

申请日：2012-03-28

Applicant: Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC: H01J3/14 ,  H01J37/32 ,  H01J49/48 ,  H05H1/00

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.

Abstract translation: 一种产生用离子能量分析仪表示的用于确定等离子体的离子能量分布的信号的方法。 用于确定等离子体的离子能量分布的离子能量分析器包括与第一格栅隔开并与之隔离的第一格栅和第二栅格。 第一栅格形成离子能量分析器的第一表面并定位成暴露于等离子体。 第一栅格包括第一多个开口，其尺寸被设计成小于等离子体的德拜长度。 电压源和离子电流计可操作地耦合到第二栅极，第二栅极被配置为测量离子收集器上的离子通量并传输表示所测量的离子通量的信号。 该方法包括相对于第一格栅选择性地和可变地偏置第二格栅。