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    Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
    71.
    发明授权
    Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses 有权
    具有多个量子阱结构的具有不同孔厚度的III族氮化物基发光二极管结构

    公开(公告)号：US08575592B2

    公开(公告)日：2013-11-05

    申请号：US12699541

    申请日：2010-02-03

    申请人： Michael John Bergmann ,  Daniel Carleton Driscoll ,  Ashonita Chavan ,  Pablo Cantu-Alejandro ,  James Ibbotson

    发明人： Michael John Bergmann ,  Daniel Carleton Driscoll ,  Ashonita Chavan ,  Pablo Cantu-Alejandro ,  James Ibbotson

    IPC分类号： H01L33/00

    CPC分类号： H01L33/04 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

    摘要： A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.

    摘要翻译： III族氮化物类发光二极管包括p型III族氮化物基半导体层，与p型III族氮化物基半导体层形成PN结的n型III族氮化物基半导体层，以及一组 在n型III族氮化物基半导体层上的III族氮化物基有源区。 有源区包括多个依次层叠的III族氮化物基阱，包括相应的阱层。 多个阱层包括具有第一厚度的第一阱层和具有第二厚度的第二阱层。 第二阱层位于P-N结与第一阱层之间，第二厚度大于第一厚度。

    SOLID STATE LIGHT EMITTING DEVICES INCLUDING NONHOMOGENEOUS LUMINOPHORIC PARTICLE SIZE LAYERS
    72.
    发明申请
    SOLID STATE LIGHT EMITTING DEVICES INCLUDING NONHOMOGENEOUS LUMINOPHORIC PARTICLE SIZE LAYERS 有权
    固体发光装置，其中包括非均质的LUMINOPHORIC颗粒尺寸层

    公开(公告)号：US20120217865A1

    公开(公告)日：2012-08-30

    申请号：US13035520

    申请日：2011-02-25

    申请人： Jasper Cabalu ,  Michael John Bergmann

    发明人： Jasper Cabalu ,  Michael John Bergmann

    IPC分类号： H01J1/68 ,  H01J1/62

    CPC分类号： H01J1/63 ,  H01J1/68 ,  H01L33/504

    摘要： A light emitting device includes an LED and a layer of luminophoric particles, such as phosphor, that are non-homogeneous in size as a function of distance away from the LED. For example, a first layer of relatively large size phosphor particles may be provided between a second layer of relatively small size phosphor particles and the LED. The large particles can provide high brightness and the small particles can reduce angular color temperature variation in emitted light.

    摘要翻译： 发光器件包括LED和诸如磷光体的发光体颗粒层，其尺寸不同于离开LED的距离的函数。 例如，可以在第二层相对较小尺寸的荧光体颗粒和LED之间提供第一层较大尺寸的荧光体颗粒。 大颗粒可以提供高亮度，并且小颗粒可以减少发射光中的角色温度变化。

    Solid state light emitting devices including nonhomogeneous luminophoric particle size layers
    75.
    发明授权
    Solid state light emitting devices including nonhomogeneous luminophoric particle size layers 有权
    固态发光器件包括非均匀的发光粒度层

    公开(公告)号：US08742654B2

    公开(公告)日：2014-06-03

    申请号：US13035520

    申请日：2011-02-25

    申请人： Jasper Cabalu ,  Michael John Bergmann

    发明人： Jasper Cabalu ,  Michael John Bergmann

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01J1/63 ,  H01J1/68 ,  H01L33/504

    摘要： A light emitting device includes an LED and a layer of luminophoric particles, such as phosphor, that are non-homogeneous in size as a function of distance away from the LED. For example, a first layer of relatively large size phosphor particles may be provided between a second layer of relatively small size phosphor particles and the LED. The large particles can provide high brightness and the small particles can reduce angular color temperature variation in emitted light.

    摘要翻译： 发光器件包括LED和诸如磷光体的发光体颗粒层，其尺寸不同于离开LED的距离的函数。 例如，可以在第二层相对较小尺寸的荧光体颗粒和LED之间提供第一层较大尺寸的荧光体颗粒。 大颗粒可以提供高亮度，并且小颗粒可以减少发射光中的角色温度变化。