公开(公告)号：US06885030B2

公开(公告)日：2005-04-26

申请号：US10392840

申请日：2003-03-21

申请人： Yutaka Onozuka ,  Mitsuo Nakajima ,  Yujiro Hara ,  Tsuyoshi Hioki ,  Masahiko Akiyama

发明人： Yutaka Onozuka ,  Mitsuo Nakajima ,  Yujiro Hara ,  Tsuyoshi Hioki ,  Masahiko Akiyama

IPC分类号： G02F1/13 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  H01L21/02 ,  H01L21/336 ,  H01L21/60 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L29/76

CPC分类号： H01L27/1266 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L24/24 ,  H01L24/82 ,  H01L24/83 ,  H01L27/12 ,  H01L27/1244 ,  H01L27/3244 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/2919 ,  H01L2224/82001 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/3512

摘要： An active matrix substrate comprises a substrate, a thick-film adhesive pad made of organic resin, provided on the substrate and including, at least at a part of a side face thereof, an inclined region having a first contact angle smaller than 90 degrees to the main face of the substrate, a thin-film active element provided on the thick-film adhesive pad, and a thin-film interconnection line connected to the thin-film active element and extending onto the substrate via the inclined region, a film thickness of the thick-film adhesive pad being four or more times that of the thin-film interconnection line.

公开(公告)号：US06248711B1

公开(公告)日：2001-06-19

申请号：US09698268

申请日：2000-10-30

申请人： Keisuke Mizuno ,  Masahiro Horiuchi ,  Takao Mogami ,  Mitsuo Nakajima

发明人： Keisuke Mizuno ,  Masahiro Horiuchi ,  Takao Mogami ,  Mitsuo Nakajima

IPC分类号： C11D138

CPC分类号： C11D3/37 ,  C09D7/71 ,  C11D1/008 ,  C11D3/08 ,  C11D3/1246

摘要： In a method of treating a wet paint spray booth, the sepiolite alone or further accompanying the cationic polymer or the amphoteric metal compound is added. The wet paint spray booth treating agent and a method of treating a wet paint spray booth improve the effect of reduction in tackiness and decrease the load of agents to prevent the corrosion of furnishings. The sepiolite is a fibrous mineral containing chain structures having lots of micropores so that the sepiolite can reduce the tackiness of the paint due to reaction with the particles of the paint in such a manner to adsorb the particles in the micropores thereof. Since both the particles of the paint and the particles of the sepiolite are negatively charged, when the cationic polymer or the amphoteric metal compound is added in combination with the sepiolite, the electrical repulsion is reduced so that the particles of the paint become easy to be adsorbed to improve the effect of the reduction in the tackiness.

摘要翻译： 在湿式喷漆室的处理方法中，加入单独或进一步伴随阳离子聚合物或两性金属化合物的海泡石。 湿漆喷雾处理剂和湿喷漆室的处理方法提高了粘合性降低的效果，降低了试剂的负荷，防止了家具的腐蚀。 海泡石是含有大量微孔的含有链状结构的纤维状矿物质，使得海泡石可以降低由于与涂料的颗粒的反应而导致的涂料的粘性，从而以这样的方式将颗粒吸附在其微孔中。 由于涂料的颗粒和海泡石的颗粒都是带负电荷的，当将阳离子聚合物或两性金属化合物与海泡石组合加入时，电斥力降低，使得涂料的颗粒变得容易 吸附以改善粘合性降低的效果。

公开(公告)号：US6001714A

公开(公告)日：1999-12-14

申请号：US938314

申请日：1997-09-26

申请人： Mitsuo Nakajima ,  Yasumasa Goto

发明人： Mitsuo Nakajima ,  Yasumasa Goto

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/266 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/425

CPC分类号： H01L29/66757 ,  H01L21/266 ,  H01L21/268 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/42384

摘要： The present invention proves a method and apparatus for manufacturing a polysilicon TFT without a defective activated area in a channel region below a gate. According to the instant invention, a dopant is implanted into a polysilicon thin film formed on an substrate with a gate having a tapered edge which is used as a mask to form a source and a drain. An energy beam then slantingly irradiates from the side of the edge of the gate to the surface of the substrate. Thus, the source and drain are activated and, at the same time, the energy beam streams into the polysilicon thin film below the edge of the gate to activate the channel region implanted the dopant.

摘要翻译： 本发明证明了在栅极下方的沟道区域中制造多晶硅TFT而没有有缺陷的激活区域的方法和装置。 根据本发明，将掺杂剂注入形成在基板上的多晶硅薄膜中，其栅极具有用作掩模的锥形边缘以形成源极和漏极。 然后，能量束从栅极的边缘的侧面倾斜地照射到衬底的表面。 因此，源极和漏极被激活，并且同时能量束流入栅极边缘下方的多晶硅薄膜，以激活注入掺杂剂的沟道区域。

公开(公告)号：US5763904A

公开(公告)日：1998-06-09

申请号：US710110

申请日：1996-09-12

申请人： Mitsuo Nakajima ,  Yasumasa Gotou ,  Yoshito Kawakyu

发明人： Mitsuo Nakajima ,  Yasumasa Gotou ,  Yoshito Kawakyu

IPC分类号： G02F1/1368 ,  H01L21/285 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/78618 ,  H01L21/28512 ,  H01L27/1214 ,  H01L29/66757 ,  G02F1/1368 ,  H01L29/78603

摘要： A thin film transistor is disclosed, that comprises a first substrate protection film formed on a transparent insulation substrate, a second substrate protection film formed in a predetermined shape on the first substrate protection film, a semiconductor film having a channel region and a contact region formed on the second substrate protection film, the channel region being surrounded by the contact region, a gate insulation film formed above the semiconductor film, the gate insulation film having an opening portion for the contact region of the semiconductor film, a gate electrode formed in a region corresponding to the channel region of the semiconductor film on the gate insulation film, an inter-layer insulation film formed above the gate electrode, the inter-layer insulation film having an opening portion for the contact region of the semiconductor film, and a plurality of electrodes formed on the inter-layer insulation film, the plurality of electrodes being connected to the contact region of the semiconductor film through the opening portion. The edge surfaces of the second substrate protection film may be tapered. A contact state between the gate electrode and the inter-layer insulation film is controlled corresponding to the concentration of hydrogen of the inter-layer insulation film.

摘要翻译： 公开了一种薄膜晶体管，其包括形成在透明绝缘基板上的第一基板保护膜，在第一基板保护膜上形成为预定形状的第二基板保护膜，形成有沟道区域和接触区域的半导体膜 在所述第二基板保护膜上，所述沟道区域被所述接触区域包围，形成在所述半导体膜上方的栅极绝缘膜，所述栅极绝缘膜具有用于所述半导体膜的接触区域的开口部分， 对应于栅极绝缘膜上的半导体膜的沟道区域的区域，形成在栅极电极上方的层间绝缘膜，层间绝缘膜具有用于半导体膜的接触区域的开口部分和多个 形成在所述层间绝缘膜上的电极，所述多个电极连接到所述层间绝缘膜 通过开口部分的半导体膜的作用区域。 第二基板保护膜的边缘表面可以是锥形的。 对应于层间绝缘膜的氢浓度来控制栅电极和层间绝缘膜之间的接触状态。