公开(公告)号：US09711414B2

公开(公告)日：2017-07-18

申请号：US14887484

申请日：2015-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryan M. Hatcher ,  Robert C. Bowen ,  Mark S. Rodder ,  Borna J. Obradovic ,  Joon Goo Hong

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L21/823807 ,  H01L21/823828 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/20 ,  H01L29/22 ,  H01L29/42392 ,  H01L29/66484 ,  H01L29/775 ,  H01L29/7847

Abstract: Exemplary embodiments provide for fabricating a biaxially strained nanosheet. Aspects of the exemplary embodiments include: growing an epitaxial crystalline initial superlattice having one or more periods, each of the periods comprising at least three layers, an active material layer, a first sacrificial material layer and a second sacrificial material layer, the first and second sacrificial material layers having different material properties; in each of the one or more periods, placing each of the active material layers between the first and second sacrificial material layers, wherein lattice constants of the first and second sacrificial material layers are different than the active material layer and impose biaxial stress in the active material layer; selectively etching away all of the first sacrificial material layers thereby exposing one surface of the active material for additional processing, while the biaxial strain in the active material layers is maintained by the second sacrificial material layers; and selectively etching away all of the second sacrificial material layers thereby exposing a second surface of the active material layers for additional processing.

公开(公告)号：US09601586B1

公开(公告)日：2017-03-21

申请号：US15017352

申请日：2016-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Joon Goo Hong ,  Mark S. Rodder

IPC: H01L21/336 ,  H01L29/417 ,  H01L29/66 ,  H01L29/45 ,  H01L21/8234 ,  H01L29/08

CPC classification number: H01L29/41791 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L29/0847 ,  H01L29/45 ,  H01L29/66545

Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device includes forming a metal layer on source/drain regions of respective semiconductor structures, after replacing a dummy gate structure of the semiconductor device with a metal gate structure. The method includes forming a contact structure that overlaps the metal layer on one or more, but not all, of the semiconductor structures. Moreover, an insulating material is between the source/drain regions.

公开(公告)号：US09570395B1

公开(公告)日：2017-02-14

申请号：US15158500

申请日：2016-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rwik Sengupta ,  Joon Goo Hong ,  Mark Rodder

IPC: H01L23/02 ,  H01L23/528 ,  H01L23/535 ,  H01L29/78 ,  H01L21/768 ,  H01L23/532 ,  H01L29/06

CPC classification number: H01L23/5286 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/535 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/0665 ,  H01L29/785

Abstract: A semiconductor device includes: a substrate; a power rail on the substrate; an active layer on the substrate and at same layer as the power rail; and a contact electrically connecting the power rail to the active layer. The active layer includes source/drain terminals.

Abstract translation: 半导体器件包括：衬底; 基板上的电源轨; 在基板上并且与电力轨道相同层的有源层; 以及将电源轨电连接到有源层的触点。 有源层包括源极/漏极端子。