公开(公告)号：US20120034149A1

公开(公告)日：2012-02-09

申请号：US13235989

申请日：2011-09-19

申请人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hitoshi Kasai ,  Takuji Okahisa

发明人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hitoshi Kasai ,  Takuji Okahisa

IPC分类号： C01B21/06 ,  C30B25/02

CPC分类号： H01L33/325 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02664

摘要： The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

摘要翻译： 本发明涉及由具有（0001）面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-11面]的至少一个平面而获得的GaN结晶自立式基板， （0001）平面生长晶体区域的碳浓度为5×1016原子/ cm3以下的构成除了晶体侧面以外的构成晶面区域的晶体生长面， 硅浓度为5×10 17原子/ cm 3以上且2×10 18原子/ cm 3以下，氧浓度为1×10 17原子/ cm 3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下，硅浓度为5×10 17原子/ cm 3以下，氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。

公开(公告)号：US07351347B2

公开(公告)日：2008-04-01

申请号：US10482434

申请日：2003-01-23

申请人： Katsushi Akita ,  Takuji Okahisa

发明人： Katsushi Akita ,  Takuji Okahisa

IPC分类号： H01L21/302

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

摘要： GaN crystal having few dislocations is grown by using together ELO-mask and defect-seeding-mask means. ELO masks make it so that GaN crystal does not grow directly, but grows laterally; defect-seeding masks make it so that closed defect-gathering regions in which defects are concentrated are grown.Any of the materials SiN, SiON or SiO2 is utilized for the ELO mask, while any of the materials Pt, Ni or Ti is utilized for the defect-seeding masks. With a sapphire, GaAs, spinel, Si, InP, SiC, etc. single-crystal substrate, or one in which a GaN buffer layer is coated onto a single-crystal substrate of these, as an under-substrate, the ELO mask and defect-seeding masks are provided complementarily and GaN is vapor-phase deposited.

摘要翻译： 通过使用ELO掩模和缺陷种子掩模手段一起生长具有很少位错的GaN晶体。 ELO掩模使得GaN晶体不直接生长，而是横向生长; 缺陷接种掩模使得使得缺陷集中的封闭的缺陷聚集区域生长。 任何材料SiN，SiON或SiO 2都用于ELO掩模，而任何材料Pt，Ni或Ti用于缺陷种子掩模。 使用蓝宝石，GaAs，尖晶石，Si，InP，SiC等单晶衬底，或其中GaN缓冲层涂覆在这些的单晶衬底上作为衬底下的ELO掩模和 补片提供缺陷种子掩模，气相沉积GaN。

公开(公告)号：US20070096117A1

公开(公告)日：2007-05-03

申请号：US11612481

申请日：2006-12-19

申请人： Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

发明人： Michimasa Miyanaga ,  Koji Uematsu ,  Takuji Okahisa

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L29/24 ,  H01L29/26 ,  H01L27/15

CPC分类号： H01L29/2003 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L31/184 ,  H01L33/16 ,  Y10S117/902

摘要： A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.

摘要翻译： 可以通过指定或控制氮化物半导体衬底的主表面的偏轴角度的局部变化来获得具有优选用于制造各种氮化物半导体器件的性质的氮化物半导体衬底。 在具有平坦主表面的氮化物半导体单晶晶片中，氮化物半导体单晶晶片的主表面的晶面取向在预定角度范围内局部变化。