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125 条记录 (耗时 0.026 秒)

    Method for producing a semiconductor device with a semiconductor body
    71.
    发明申请
    Method for producing a semiconductor device with a semiconductor body 有权
    一种具有半导体本体的半导体器件的制造方法

    公开(公告)号：US20110189839A1

    公开(公告)日：2011-08-04

    申请号：US13085196

    申请日：2011-04-12

    申请人： Armin Willmeroth ,  Franz Hirler

    发明人： Armin Willmeroth ,  Franz Hirler

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/8083

    摘要： A semiconductor device with a semiconductor body and method for its production is disclosed. The semiconductor body includes drift zones of epitaxially grown semiconductor material of a first conduction type. The semiconductor body further includes charge compensation zones of a second conduction type complementing the first conduction type, which are arranged laterally adjacent to the drift zones. The charge compensation zones are provided with a laterally limited charge compensation zone doping, which is introduced into the epitaxially grown semiconductor material. The epitaxially grown semiconductor material includes 20 to 80 atomic % of the doping material of the drift zones and a doping material balance of 80 to 20 atomic % introduced by ion implantation and diffusion.

    摘要翻译： 公开了一种半导体器件及其制造方法。 半导体本体包括第一导电类型的外延生长的半导体材料的漂移区。 半导体本体还包括与第一导电类型相互补充的第二导电类型的电荷补偿区，它们被布置成横向邻近漂移区。 电荷补偿区带有横向有限的电荷补偿区掺杂，其被引入外延生长的半导体材料中。 外延生长的半导体材料包括漂移区的掺杂材料的20至80原子％和通过离子注入和扩散引入的80至20原子％的掺杂材料平衡。

    INTEGRATED CIRCUIT HAVING COMPENSATION COMPONENT
    76.
    发明申请
    INTEGRATED CIRCUIT HAVING COMPENSATION COMPONENT 有权
    具有补偿组件的集成电路

    公开(公告)号：US20120032255A1

    公开(公告)日：2012-02-09

    申请号：US13277820

    申请日：2011-10-20

    申请人： Armin Willmeroth ,  Holger Kapels

    发明人： Armin Willmeroth ,  Holger Kapels

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/7824

    摘要： An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

    摘要翻译： 公开了一种集成电路和部件。 在一个实施例中，组件是补偿部件，公开了以V形方式构造漂移区域中的补偿区域，以实现空间电荷区域从补偿区域的上端到下端的会聚。

    Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production
    77.
    发明授权
    Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production 有权
    具有半导体主体中的载流子补偿结构的半导体器件及其制造方法

    公开(公告)号：US08101997B2

    公开(公告)日：2012-01-24

    申请号：US12111749

    申请日：2008-04-29

    申请人： Armin Willmeroth ,  Michael Rueb

    发明人： Armin Willmeroth ,  Michael Rueb

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7395

    摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.

    摘要翻译： 在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。 半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。 漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。 朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。 朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

    MOS TRANSISTOR WITH ELEVATED GATE DRAIN CAPACITY
    79.
    发明申请
    MOS TRANSISTOR WITH ELEVATED GATE DRAIN CAPACITY 有权
    具有高度门排水能力的MOS晶体管

    公开(公告)号：US20110089481A1

    公开(公告)日：2011-04-21

    申请号：US12976107

    申请日：2010-12-22

    申请人： Armin Willmeroth ,  Michael Treu

    发明人： Armin Willmeroth ,  Michael Treu

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

    摘要： A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.

    摘要翻译： 描述了具有增加的栅 - 漏电容的MOS晶体管。 一个实施例提供了第一导电类型的漂移区。 至少一个晶体管单元具有体区，通过体区与漂移区分离的源极区以及邻近体区设置并通过栅介质与体区介电绝缘的栅电极。 在漂移区域中布置有至少一个第一导电类型的补偿区域。 至少一个反馈电极被布置在与身体区隔一定距离处，该区域通过反馈电介质与漂移区介电绝缘，并且与电极导电连接。