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93 条记录 (耗时 0.029 秒)

    Optical elements including light sources and waveguides and information storage devices including the same
    72.
    发明授权
    Optical elements including light sources and waveguides and information storage devices including the same 有权
    包括光源和波导的光学元件和包括其的信息存储装置

    公开(公告)号：US08526288B2

    公开(公告)日：2013-09-03

    申请号：US13297713

    申请日：2011-11-16

    申请人： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

    发明人： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

    IPC分类号： G11B7/00

    CPC分类号： G11C13/06 ,  G02B5/008 ,  G02F2203/10

    摘要： An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

    摘要翻译： 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。

    Oscillators and methods of manufacturing and operating the same
    73.
    发明授权
    Oscillators and methods of manufacturing and operating the same 有权
    振荡器和制造和操作方法相同

    公开(公告)号：US08427246B2

    公开(公告)日：2013-04-23

    申请号：US12929932

    申请日：2011-02-25

    申请人： Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： H01L29/00

    CPC分类号： H01L43/12 ,  H01L43/08 ,  H03B15/006

    摘要： Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession.

    摘要翻译： 提供了振荡器和制造和操作振荡器的方法，振荡器包括钉扎层，自由层和在被钉扎层和自由层之间具有至少一根细丝的阻挡层。 被钉扎层可以具有固定的磁化方向。 对应于钉扎层的自由层。 可以通过在被钉扎层和自由层之间施加电压来形成阻挡层中的至少一个细丝。 振荡器可以通过引起对应于至少一根灯丝的自由层的至少一个区域的磁矩的进动并且检测由于进动而引起的振荡器的电阻变化来操作。

    Method of operating information storage device using magnetic domain wall movement
    75.
    发明授权
    Method of operating information storage device using magnetic domain wall movement 有权
    使用磁畴壁移动操作信息存储装置的方法

    公开(公告)号：US08270197B2

    公开(公告)日：2012-09-18

    申请号：US12289299

    申请日：2008-10-24

    申请人： Sung-chul Lee

    发明人： Sung-chul Lee

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0841 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： A method of operating an information storage device using a magnetic domain wall movement in a magnetic nanowire is provided. The magnetic nanowire includes a plurality of magnetic domains and pinning sites formed in regions between the magnetic domains. The method includes depinning the magnetic domain wall from a first pinning site by applying a first pulse current having a first pulse current density to the magnetic nanowire and moving the magnetic domain wall to a second pinning site by applying a second pulse current having a second pulse current density to the magnetic nanowire. The first pulse current density is greater than the second pulse current density.

    摘要翻译： 提供了一种在磁性纳米线中使用磁畴壁移动来操作信息存储装置的方法。 磁性纳米线包括形成在磁畴之间的区域中的多个磁畴和钉扎位置。 该方法包括通过向磁性纳米线施加具有第一脉冲电流密度的第一脉冲电流并将磁畴壁移动到第二钉扎位置，通过施加具有第二脉冲的第二脉冲电流来从第一钉扎位置去除磁畴壁 磁性纳米线的电流密度。 第一脉冲电流密度大于第二脉冲电流密度。

    OSCILLATORS AND METHODS OF OPERATING THE SAME
    78.
    发明申请
    OSCILLATORS AND METHODS OF OPERATING THE SAME 有权
    振荡器及其操作方法

    公开(公告)号：US20120038430A1

    公开(公告)日：2012-02-16

    申请号：US13099684

    申请日：2011-05-03

    申请人： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    发明人： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    IPC分类号： H03B5/30

    CPC分类号： H03B15/006

    摘要： Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

    摘要翻译： 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。

    Information storage devices including vertical nano wires
    79.
    发明授权
    Information storage devices including vertical nano wires 失效
    信息存储设备包括垂直纳米线

    公开(公告)号：US08089797B2

    公开(公告)日：2012-01-03

    申请号：US12659515

    申请日：2010-03-11

    申请人： Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

    发明人： Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    摘要： A memory cell includes: a memory cell array unit having a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; a nano wire selection unit formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.

    摘要翻译： 存储单元包括：存储单元阵列单元，具有垂直地布置在基板上的多个纳米线，所述多个纳米线中的每一个具有用于存储信息的多个域; 形成在所述基板上并被配置为选择所述多个纳米线中的至少一个的纳米线选择单元; 域移动控制单元，形成在所述基板上，并且被配置为控制相对于所述多个纳米线中的至少一个的域移动操作; 以及读/写控制单元，形成在所述基板上并被配置为控制关于所述多根纳米线中的至少一个的读取操作和写入操作中的至少一个。