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1.发明授权Magnetic storage device having a buffer track and storage tracks, and method of operating the same 有权具有缓冲轨道和存储轨道的磁存储装置及其操作方法公开(公告)号：US08045371B2
公开(公告)日：2011-10-25
申请号：US12588333
申请日：2009-10-13
申请人： Sung-chul Lee , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pl , Ji-young Bae , Jin-seong Heo
发明人： Sung-chul Lee , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pl , Ji-young Bae , Jin-seong Heo
IPC分类号： G11C11/15
CPC分类号： G11B5/584 , G11B5/581 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.
摘要翻译： 信息存储装置包括具有缓冲轨道和连接到缓冲轨迹的多个存储轨道的磁结构。 写/读单元设置在磁结构上，并且多个开关装置分别连接到缓冲磁道，多个存储磁道和写/读单元。 分别连接到缓冲器轨道和存储轨道的开关装置。 信息存储装置还包括被配置为向磁结构和写入/读取单元中的至少一个提供电流的电路。
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公开(公告)号：US20100232055A1
公开(公告)日：2010-09-16
申请号：US12588333
申请日：2009-10-13
申请人： Sung-chul Lee , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae , Jin-seong Heo
发明人： Sung-chul Lee , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae , Jin-seong Heo
IPC分类号： G11B5/58
CPC分类号： G11B5/584 , G11B5/581 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.
摘要翻译： 信息存储装置包括具有缓冲轨道和连接到缓冲轨迹的多个存储轨道的磁结构。 写/读单元设置在磁结构上，并且多个开关装置分别连接到缓冲磁道，多个存储磁道和写/读单元。 分别连接到缓冲器轨道和存储轨道的开关装置。 信息存储装置还包括被配置为向磁结构和写入/读取单元中的至少一个提供电流的电路。
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3.发明申请公开(公告)号：US20100008135A1
公开(公告)日：2010-01-14
申请号：US12385859
申请日：2009-04-22
申请人： Young-jin Cho , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Sung-chul Lee , Ji-Young Bae
发明人： Young-jin Cho , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Sung-chul Lee , Ji-Young Bae
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： G01R33/12 , G01R33/1207 , G01R33/1284 , G01R33/1292 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.
摘要翻译： 信息存储装置包括存储节点，写入单元，被配置为向存储节点的第一磁畴区域写入信息;以及读取单元，被配置为从存储节点的第二磁畴区域读取信息。 所述信息存储装置还包括临时存储单元，其被配置为临时存储由所述读取单元读取的信息;以及写入控制单元，电连接到所述临时存储单元并且被配置为控制提供给所述写入单元的电流。 从第二磁畴区域读取的信息存储在临时存储单元中，并写入第一磁畴区域。
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公开(公告)号：US08144503B2
公开(公告)日：2012-03-27
申请号：US12457908
申请日：2009-06-25
申请人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ji-young Bae , Ung-hwan Pi , Hyung-soon Shin , Seung-jun Lee
发明人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ji-young Bae , Ung-hwan Pi , Hyung-soon Shin , Seung-jun Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/1657 , G11B2005/0002 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.
摘要翻译： 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。
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5.发明授权公开(公告)号：US08320152B2
公开(公告)日：2012-11-27
申请号：US12385859
申请日：2009-04-22
申请人： Young-jin Cho , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Sung-chul Lee , Ji-young Bae
发明人： Young-jin Cho , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Sung-chul Lee , Ji-young Bae
IPC分类号： G11C7/00
CPC分类号： G01R33/12 , G01R33/1207 , G01R33/1284 , G01R33/1292 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.
摘要翻译： 信息存储装置包括存储节点，写入单元，被配置为向存储节点的第一磁畴区域写入信息;以及读取单元，被配置为从存储节点的第二磁畴区域读取信息。 所述信息存储装置还包括临时存储单元，其被配置为临时存储由所述读取单元读取的信息;以及写入控制单元，电连接到所述临时存储单元并且被配置为控制提供给所述写入单元的电流。 从第二磁畴区域读取的信息存储在临时存储单元中，并写入第一磁畴区域。
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公开(公告)号：US20100157663A1
公开(公告)日：2010-06-24
申请号：US12457908
申请日：2009-06-25
申请人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ji-young Bae , Ung-hwan Pi , Hyung-soon Shin , Seung-jun Lee
发明人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ji-young Bae , Ung-hwan Pi , Hyung-soon Shin , Seung-jun Lee
CPC分类号： G11C11/1657 , G11B2005/0002 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.
摘要翻译： 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。
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公开(公告)号：US20100008130A1
公开(公告)日：2010-01-14
申请号：US12458411
申请日：2009-07-10
申请人： Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
发明人： Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
摘要翻译： 提供了一种操作包括开关结构和磁阻结构的磁性随机存取存储器件的方法。 根据该方法，当向磁阻结构写入数据时，通过控制开关结构的栅极电压可以减小依赖于电流方向的电流变化。
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公开(公告)号：US08144504B2
公开(公告)日：2012-03-27
申请号：US12458411
申请日：2009-07-10
申请人： Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
发明人： Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
摘要翻译： 提供了一种操作包括开关结构和磁阻结构的磁性随机存取存储器件的方法。 根据该方法，当向磁阻结构写入数据时，通过控制开关结构的栅极电压可以减小依赖于电流方向的电流变化。
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公开(公告)号：US07672154B2
公开(公告)日：2010-03-02
申请号：US12073678
申请日：2008-03-07
申请人： In-jun Hwang , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
发明人： In-jun Hwang , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
IPC分类号： G11C11/00
CPC分类号： G11C11/1697 , G11C11/1653 , G11C11/1673 , G11C11/1675
摘要： Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.
摘要翻译： 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两种操作模式中的每一种，并且响应于所述至少两种操作模式而连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。
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10.发明申请公开(公告)号：US20080013369A1
公开(公告)日：2008-01-17
申请号：US11654002
申请日：2007-01-17
申请人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
发明人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
IPC分类号： G11C11/00
摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode
摘要翻译： 描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线
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