公开(公告)号：US20080245656A1

公开(公告)日：2008-10-09

申请号：US10573406

申请日：2004-09-22

申请人： Koichi Watanabe ,  Yukinobu Suzuki ,  Takashi Ishigami

发明人： Koichi Watanabe ,  Yukinobu Suzuki ,  Takashi Ishigami

IPC分类号： C23C14/34

CPC分类号： C23C14/10 ,  C23C14/3414

摘要： A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I(111)) to peak intensity of (220) face (I(220)) of Si, (I(111)/I(220)), falling within the range of 1.8±0.3. The Si sputtering target comprises, for example, an Si sintered material of 70 to 95% relative density. With respect to sputtering films such as Si oxide film, the film thickness characteristics, film formation cost, etc. can be improved by the use of this Si sputtering target.

摘要翻译： 根据X射线衍射测定溅射表面的晶面取向的Si溅射靶，表现出（111）面（I（111））的峰强度与峰面强度的比值 （220）表面（I（220）），（I（111）/ I（220）），落在范围内 为1.8±0.3。 Si溅射靶包括例如相对密度为70-95％的Si烧结材料。 对于诸如Si氧化膜的溅射膜，可以通过使用该Si溅射靶来提高膜厚特性，成膜成本等。

公开(公告)号：US07230337B2

公开(公告)日：2007-06-12

申请号：US10760554

申请日：2004-01-21

申请人： Tatsuya Usami ,  Takashi Ishigami ,  Tetsuya Kurokawa ,  Noriaki Oda

发明人： Tatsuya Usami ,  Takashi Ishigami ,  Tetsuya Kurokawa ,  Noriaki Oda

IPC分类号： H01L23/48 ,  H01L23/29 ,  H01L23/28 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L23/53295 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu film 209 is formed in multilayer films comprising a L-Ox™ film 203 and a SiO2 film 204. Since the L-Ox™ film 203 comprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.

摘要翻译： 本发明降低了层间绝缘膜的有效介电常数，同时抑制了由吸湿引起的半导体器件的可靠性的降低。 包括Cu膜209的铜互连形成在包括L-Ox TM膜203和SiO 2膜204的多层膜中。 由于L-Ox TM膜203包括梯形硅氢化合物结构，所以膜厚度和膜特性是稳定的，因此在制造过程中几乎不发生膜质量的变化。

公开(公告)号：US06750542B2

公开(公告)日：2004-06-15

申请号：US10257404

申请日：2002-10-21

申请人： Yukinobu Suzuki ,  Takashi Ishigami ,  Yasuo Kohsaka ,  Naomi Fujioka ,  Takashi Watanabe ,  Koichi Watanabe ,  Kenya Sano

发明人： Yukinobu Suzuki ,  Takashi Ishigami ,  Yasuo Kohsaka ,  Naomi Fujioka ,  Takashi Watanabe ,  Koichi Watanabe ,  Kenya Sano

IPC分类号： H01L2348

CPC分类号： H01L21/7687 ,  C23C14/0641 ,  C23C14/3414 ,  H01L21/2855 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/75

摘要： A sputter target is made of a Ti—Al alloy containing Al in the range of 1 to 30 atm %. In the Ti—Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti—Al alloy is 500 &mgr;m or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti—Al—N film as a barrier film is formed by using the sputter target made of the Ti—Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate.

摘要翻译： 溅射靶由含有1〜30atm％的Al的Ti-Al合金构成。 在构成溅射靶的Ti-Al合金中，Al以Ti中的固溶态和Al与Ti形成金属间化合物的状态中的至少一种存在，并且整个靶中的Al含量的变化被限制在10 ％。 此外，Ti-Al合金的平均晶粒直径为500μm以下，整个靶的晶粒直径的变化被限制在30％以内。 通过使用如上所述的由Ti-Al合金制成的溅射靶，形成作为阻挡膜的Ti-Al-N膜。 电子部件包括形成在半导体基板上的阻挡膜。

公开(公告)号：US06400025B1

公开(公告)日：2002-06-04

申请号：US09280653

申请日：1999-03-29

申请人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

发明人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

IPC分类号： H01L2348

CPC分类号： C22B9/228 ,  C22B34/1295 ,  C22C14/00 ,  C23C14/3414 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01074

摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

摘要翻译： 通过熔盐电解或碘化法制备的粗Ti粒子根据杂质的含量分为各个粒径，具有所需粒径的粗Ti粒子选自根据各粒径分级的粗Ti粒子。 否则，粗Ti颗粒被酸处理。 然后电子束熔化。 通过上述制造方法，制备氧含量不大于350ppm，Fe，Ni和Cr含量不高于15ppm的高纯度Ti材料，Na和K含量不大于0.5ppm ，作为材料特性不小于70％的面积的减小，以及不低于16W / m K的热导率。简而言之，高纯度，高加工性和良好导热性的高纯度Ti材料可以是 获得。 可以从使用上述高纯度Ti材料制备的溅射靶获得具有更均匀厚度的膜和内部结构的膜。

公开(公告)号：US06329275B1

公开(公告)日：2001-12-11

申请号：US09051567

申请日：1998-04-10

申请人： Takashi Ishigami ,  Koichi Watanabe ,  Akihisa Nitta ,  Toshihiro Maki ,  Noriaki Yagi

发明人： Takashi Ishigami ,  Koichi Watanabe ,  Akihisa Nitta ,  Toshihiro Maki ,  Noriaki Yagi

IPC分类号： H01L2120

CPC分类号： H01L21/32051 ,  C22C21/00 ,  C23C14/14 ,  C23C14/165 ,  C23C14/3414 ,  G02F2001/136295 ,  H01L21/2855 ,  H01L23/53214 ,  H01L23/53219 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/16152 ,  H01L2924/181 ,  H03H9/14538 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

摘要翻译： 包含0.001〜30原子％的至少一种能够构成铝的金属间化合物和/或具有比铝更高的标准电极电位的第一元素的互连线，例如至少一种 选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb，Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re， Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au，Cd，Si，Pb和B; 和一种选自C，O，N和H的第二元素，其比例为0.01〜100原子％的比例，余量基本上为Al。 除了具有低电阻之外，这种薄膜的Al互连线可以防止发生小丘和与ITO电极的电化学反应。 可以通过使用具有相似组成的溅射靶以无尘的方式溅射来获得薄膜的互连线。

公开(公告)号：US6165607A

公开(公告)日：2000-12-26

申请号：US101455

申请日：1998-07-17

申请人： Takashi Yamanobe ,  Naomi Fujioka ,  Takashi Ishigami ,  Nobuo Katsui ,  Hiromi Fuke ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Takashi Watanabe

发明人： Takashi Yamanobe ,  Naomi Fujioka ,  Takashi Ishigami ,  Nobuo Katsui ,  Hiromi Fuke ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Takashi Watanabe

IPC分类号： C23C14/06 ,  C23C14/14 ,  C23C14/34 ,  G11B5/39 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L43/12 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/14 ,  C23C14/3414 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/183 ,  H01F41/302 ,  H01L43/12 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/26 ,  Y10T428/265

摘要： A sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target, at least as a part of target texture, comprises one member selected from a group of an alloy phase and a compound phase formed between the R element and Mn. In addition, oxygen content in the target is 1 weight % or less (including 0). With such a sputtering target, an anti-ferromagnetic material film consisting of RMn alloy excellent in corrosion resistivity and thermal performance can be stabilized in its film composition and film quality. By employing the anti-ferromagnetic material film, when an exchange coupling film is formed by stacking the anti-ferromagnetic material film and the ferromagnetic material film, sufficient exchange coupling force is obtained stably. Such an exchange coupling film can be used in a magneto-resistance effect element and the like.

摘要翻译： PCT No.PCT / JP97 / 04232 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年11月20日PCT公布。 公开号WO98 / 22636 日期1998年5月28日一种主要由Mn和选自Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru中的至少一种R元素组成的溅射靶， Os，Cr，Mo，W和Re。 至少作为目标结构的一部分的溅射靶包括选自由R元素和Mn之间形成的合金相和化合物相的组中的一种。 此外，靶中的氧含量为1重量％以下（包括0）。 通过这样的溅射靶，可以在其膜组成和膜质量中稳定由耐腐蚀性和耐热性优异的RMn合金构成的反铁磁性材料膜。 通过采用反铁磁材料膜，当通过堆叠反铁磁材料膜和铁磁材料膜形成交换耦合膜时，稳定地获得了充分的交换耦合力。 这种交换耦合膜可用于磁阻效应元件等。

公开(公告)号：US5679983A

公开(公告)日：1997-10-21

申请号：US454583

申请日：1995-05-31

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

摘要翻译： 这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。 高纯度金属的Al含量不大于10ppm。 氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。 高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

公开(公告)号：US5204057A

公开(公告)日：1993-04-20

申请号：US924770

申请日：1992-04-09

申请人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

发明人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

IPC分类号： C22B9/22 ,  C22B34/12 ,  C22C14/00 ,  C23C14/34

CPC分类号： C22C14/00 ,  C22B34/1295 ,  C22B9/228 ,  C23C14/3414 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01074

摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

摘要翻译： 通过熔盐电解或碘化法制备的粗Ti粒子根据杂质的含量分为各个粒径，具有所需粒径的粗Ti粒子选自根据各粒径分级的粗Ti粒子。 否则，粗Ti颗粒被酸处理。 然后电子束熔化。 通过上述制造方法，制备氧含量不大于350ppm，Fe，Ni和Cr含量不高于15ppm的高纯度Ti材料，Na和K含量不大于0.5ppm ，作为材料特性不小于70％的面积的减小，以及不低于16W / m K的热导率。简而言之，高纯度，高加工性和良好导热性的高纯度Ti材料可以是 获得。 可以从使用上述高纯度Ti材料制备的溅射靶获得具有更均匀厚度的膜和内部结构的膜。

公开(公告)号：US4891066A

公开(公告)日：1990-01-02

申请号：US219799

申请日：1988-07-15

申请人： Kazumi Shimotori ,  Yoshiharu Ochi ,  Hideo Ishihara ,  Takenori Umeki ,  Takashi Ishigami

发明人： Kazumi Shimotori ,  Yoshiharu Ochi ,  Hideo Ishihara ,  Takenori Umeki ,  Takashi Ishigami

IPC分类号： C22C29/02 ,  C22B9/22 ,  C22B34/12 ,  C22C14/00 ,  C23C14/34 ,  C25C3/28 ,  H01L21/768 ,  H01L23/532

CPC分类号： C22B34/129 ,  C22B34/1295 ,  C22B9/228 ,  C22C14/00 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium.Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.

公开(公告)号：US4634635A

公开(公告)日：1987-01-06

申请号：US655223

申请日：1984-09-27

申请人： Yasuhisa Shiraishi ,  Takashi Fujita ,  Yoshiharu Ochi ,  Masahiko Hirose ,  Katsutarou Ichihara ,  Takashi Ishigami

发明人： Yasuhisa Shiraishi ,  Takashi Fujita ,  Yoshiharu Ochi ,  Masahiko Hirose ,  Katsutarou Ichihara ,  Takashi Ishigami

IPC分类号： B44C1/04 ,  B44C1/00 ,  B44F1/08 ,  C23C16/32 ,  G02C5/00 ,  G04B37/22 ,  B32B13/04

CPC分类号： B44F1/08 ,  C23C16/325 ,  G04B37/221

摘要： An ornament coated with silicon carbide having black luster which has been formed by chemical vapor deposition aided by D.C. glow discharge using hydrogen, a silicon compound and a hydrocarbon.The black ornament according to the present invention is very suitable for a case of a watch, a frame of eyeglasses and so on.

摘要翻译： 通过化学气相沉积形成的具有黑色光泽的碳化硅的装饰物，其通过使用氢，硅化合物和烃的直流辉光放电辅助形成。 根据本发明的黑色装饰品非常适用于手表，眼镜架等的情况。