Method for determining formaldehyde present in air
    71.
    发明授权
    Method for determining formaldehyde present in air 失效
    测定空气中存在的甲醛的方法

    公开(公告)号:US6136608A

    公开(公告)日:2000-10-24

    申请号:US125827

    申请日:1998-04-05

    IPC分类号: G01N31/22 G01N33/00

    摘要: The concentration of formaldehyde in air is measured by the method of the invention. More specifically, the invention relates to a method for analyzing formaldehyde in air by collecting the air and implementing an analysis of the concentration of formaldehyde at the site where such air is found.

    摘要翻译: PCT No.PCT / JP97 / 04863 Sec。 371日期:1998年4月5日 102(e)日期1998年4月5日PCT 1997年12月24日PCT公布。 第WO98 / 30897号公报 日期1998年7月16日通过本发明的方法测量空气中甲醛的浓度。 更具体地说,本发明涉及一种通过收集空气分析空气中甲醛的方法,并且在发现这种空气的场所对甲醛的浓度进行分析。

    Image display apparatus and method of activating getter
    72.
    发明授权
    Image display apparatus and method of activating getter 失效
    图像显示装置和激活吸气剂的方法

    公开(公告)号:US5936342A

    公开(公告)日:1999-08-10

    申请号:US571380

    申请日:1995-12-13

    申请人: Takeo Ono Yasue Sato

    发明人: Takeo Ono Yasue Sato

    摘要: An image-forming apparatus includes an electron source and an image-forming member disposed in an envelope. The image-forming member includes a fluorescent film and a metal back covering the fluorescent film. The metal back contains a gettering substance and the gettering substance is irradiated with electron beams emitted from the electron source.

    摘要翻译: 图像形成装置包括电子源和设置在外壳中的图像形成部件。 图像形成构件包括荧光膜和覆盖荧光膜的金属背。 金属背部含有吸气物质,并且从电子源发射的电子束照射吸气物质。

    Plasma processing apparatus for etching, ashing and film-formation
    73.
    发明授权
    Plasma processing apparatus for etching, ashing and film-formation 失效
    用于蚀刻,灰化和成膜的等离子体处理装置

    公开(公告)号:US5034086A

    公开(公告)日:1991-07-23

    申请号:US608373

    申请日:1990-11-02

    申请人: Yasue Sato

    发明人: Yasue Sato

    IPC分类号: B05D3/14 C23C16/511 H01J37/32

    摘要: A plasma processing apparatus includes a vacuum vessel defining a discharge chamber is provided at least a source gas supply for supplying a processing gas into the discharge chamber a magnetic field creating device, a microwave introducing device. The microwave introducing device employs a microwave radiating member having the shape of a flat plate and provided with a cut. The plasma processing apparatus is capable of uniformly processing a work with a plasma and efficiently applying a microwave only to the work. The periphery of a microwave transmission window is tapered, so that the microwave transmission window can be attached adhesively and hermetically to a microwave launcher in a simple construction, whereby the reliability of the adhesive attachment of the microwave transmission window to the microwave launcher is enhanced.

    摘要翻译: 一种等离子体处理装置,包括限定排出室的真空容器,至少设置有用于将放电室中的处理气体供给到磁场产生装置,微波导入装置的源气体供给源。 微波导入装置采用具有平板形状并具有切口的微波辐射构件。 等离子体处理装置能够均匀地处理等离子体的工作,并且有效地仅将微波应用于工件。 微波传输窗口的外围是锥形的,使得微波传输窗口可以以简单的结构粘附和气密地附着到微波发射器,从而增强了微波传输窗口对微波发射器的粘附附着的可靠性。

    Plasma processing apparatus for etching, ashing and film-formation
    74.
    发明授权
    Plasma processing apparatus for etching, ashing and film-formation 失效
    用于蚀刻,灰化和成膜的等离子体处理装置

    公开(公告)号:US5024716A

    公开(公告)日:1991-06-18

    申请号:US464592

    申请日:1990-01-12

    申请人: Yasue Sato

    发明人: Yasue Sato

    IPC分类号: B05D3/14 C23C16/511 H01J37/32

    摘要: A plasma processing apparatus includes a vacuum vessel defining a discharge chamber and is provided at least with a source gas supply for supplying a processing gas into the discharge chamber, a magnetic field creating device, and a microwave introducing device. The microwave introducing device employs a microwave radiating member having the shape of a flat plate and provided with a cut. The plasma processing apparatus is capable of uniformly processing a work with a plasma and efficiently applying a microwave only to the work. The periphery of a microwave transmission window is tapered, so that the microwave transmission window can be attached, adhesively and hermetically, to a microwave launcher in a simple construction, whereby the reliability of the adhesive attachment of the microwave transmission window to the microwave launcher is enhanced.

    摘要翻译: 等离子体处理装置包括限定放电室的真空容器,至少设置有用于向放电室供应处理气体的源气体供应源,磁场产生装置和微波导入装置。 微波导入装置采用具有平板形状并具有切口的微波辐射构件。 等离子体处理装置能够均匀地处理等离子体的工作,并且有效地仅将微波应用于工件。 微波传输窗口的外围是锥形的,使得微波传输窗口可以以简单的结构附着,密封和密封到微波发射器,由此微波传输窗口粘附到微波发射器的可靠性是 增强。

    Shutter device for ion beam etching apparatus and such etching apparatus
using same
    75.
    发明授权
    Shutter device for ion beam etching apparatus and such etching apparatus using same 失效
    用于离子束蚀刻装置的快门装置和使用其的蚀刻装置

    公开(公告)号:US4761199A

    公开(公告)日:1988-08-02

    申请号:US849443

    申请日:1986-04-08

    申请人: Yasue Sato

    发明人: Yasue Sato

    IPC分类号: H01J37/04 H01J37/30 C23F1/02

    CPC分类号: H01J37/3002 H01J37/045

    摘要: A shutter device for use in an etching apparatus using charged particles, which includes at least one sheet-like electrode having an aperture for passage of the charged particles; and a voltage source for selectively applying to the electrode an electric voltage so as to establish at the electrode an electric potential higher than that of the charged particles; wherein the passage of the charged particles through the aperture of said electrode is prevented when the electric potential which is higher than that of the charged particles is established at the electrode by the voltage application by the voltage source.

    摘要翻译: 一种用于使用带电粒子的蚀刻装置中的快门装置,该快门装置包括至少一个具有用于带电粒子通过孔的片状电极; 以及电压源,用于选择性地向电极施加电压,以在电极处建立比带电粒子高的电位; 其中当通过电压源施加的电压在电极处建立高于带电粒子的电位时,阻止带电粒子通过所述电极的孔径。