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公开(公告)号：US20050208424A1
公开(公告)日：2005-09-22
申请号：US11084997
申请日：2005-03-21
IPC分类号： G03F7/033 , C08F220/26 , C08F220/28 , G03C1/492 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/26
摘要： A polymer comprising repeat units of formulae (1) to (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译： 包含式（1）至（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3 O， >和R 4是H或OH，X是具有金刚烷结构的叔烷基。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的接近偏压，并且借助于用于VLSI制造的电子束或深UV的微图案化。
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72.发明申请公开(公告)号：US20110294070A1
公开(公告)日：2011-12-01
申请号：US13150698
申请日：2011-06-01
IPC分类号： G03F7/004 , C08F214/18 , C07C69/54 , C08F220/68 , C08F224/00 , G03F7/20
CPC分类号： C08F214/18 , C07C69/54 , C07C69/96 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C08F20/26 , G03F7/0045 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/111
摘要： A polymer is obtained from a hydroxyphenyl methacrylate monomer having an acid labile group substituted thereon. A positive resist composition comprising the polymer as a base resin has a very high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good profile and minimal line edge roughness of a pattern after exposure, a retarded acid diffusion rate, and good etching resistance.
摘要翻译： 从其上取代酸不稳定基团的羟基苯基甲基丙烯酸酯单体获得聚合物。 包含聚合物作为基础树脂的正型抗蚀剂组合物在曝光前后具有非常高的对比度的碱溶解速率，高分辨率，良好的轮廓和曝光后图案的最小线边缘粗糙度，延迟的酸扩散速率和 耐腐蚀性好。
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73.发明授权Monomer, polymer, chemically amplified positive resist composition, and patterning process 有权单体，聚合物，化学放大阳性抗蚀剂组合物和图案化工艺公开(公告)号：US09017918B2
公开(公告)日：2015-04-28
申请号：US13150698
申请日：2011-06-01
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F218/10 , C07C69/54 , C07C69/96 , C08F20/26 , C08F214/18 , G03F7/004
CPC分类号： C08F214/18 , C07C69/54 , C07C69/96 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C08F20/26 , G03F7/0045 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/111
摘要： A polymer is obtained from a hydroxyphenyl methacrylate monomer having an acid labile group substituted thereon. A positive resist composition comprising the polymer as a base resin has a very high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good profile and minimal line edge roughness of a pattern after exposure, a retarded acid diffusion rate, and good etching resistance.
摘要翻译： 从其上取代酸不稳定基团的羟基苯基甲基丙烯酸酯单体获得聚合物。 包含聚合物作为基础树脂的正型抗蚀剂组合物在曝光前后具有非常高的对比度的碱溶解速率，高分辨率，良好的轮廓和曝光后图案的最小线边缘粗糙度，延迟的酸扩散速率和 耐腐蚀性好。
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公开(公告)号：US20070111140A1
公开(公告)日：2007-05-17
申请号：US11580962
申请日：2006-10-16
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/114 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： There is disclosed a resist composition which shows high sensitivity and high resolution on exposure to high energy beam, provides reduced Line Edge Roughness because swelling at the time of development is reduced, provides minor amounts of residue after development, has excellent dry etching resistance, and can also be used suitably for the liquid immersion lithography; and a patterning process using the resist composition. There can be provided a resist composition which comprises, at least, a polymer including repeating units represented by the following general formulae (a) and (b).
摘要翻译： 公开了一种抗蚀剂组合物，其在高能量束暴露时显示出高灵敏度和高分辨率，由于在显影时的膨胀减小，提供降低的线边缘粗糙度，在显影后提供少量残留物，具有优异的耐干蚀刻性，以及 也可以适用于液浸光刻; 以及使用抗蚀剂组合物的图案化工艺。 可以提供一种抗蚀剂组合物，其至少包含由以下通式（a）和（b）表示的重复单元的聚合物。
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公开(公告)号：US08450042B2
公开(公告)日：2013-05-28
申请号：US12720098
申请日：2010-03-09
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/18 , C08F220/30 , C08F220/38 , C08F234/02 , C08F244/00 , G03F7/0045 , G03F7/0046 , C08F232/08
摘要： A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译： 包含作为基础树脂的具有羧基的聚合物的正性抗蚀剂组合物，其氢被酸不稳定的芴结构基团取代，表现出曝光前后的碱溶解速率的高对比度，高分辨率，良好的图案轮廓和最小的LER 暴露后，抑制酸扩散速度，提高耐蚀刻性的显着效果。
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公开(公告)号：US07629106B2
公开(公告)日：2009-12-08
申请号：US11580962
申请日：2006-10-16
IPC分类号： G03F7/039
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/114 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： There is disclosed a resist composition which shows high sensitivity and high resolution on exposure to high energy beam, provides reduced Line Edge Roughness because swelling at the time of development is reduced, provides minor amounts of residue after development, has excellent dry etching resistance, and can also be used suitably for the liquid immersion lithography; and a patterning process using the resist composition. There can be provided a resist composition which comprises, at least, a polymer including repeating units represented by the following general formulae (a) and (b).
摘要翻译： 公开了一种抗蚀剂组合物，其在高能量束暴露时显示出高灵敏度和高分辨率，由于在显影时的膨胀减小，提供降低的线边缘粗糙度，在显影后提供少量残留物，具有优异的耐干蚀刻性，以及 也可以适用于液浸光刻; 以及使用抗蚀剂组合物的图案化工艺。 可以提供一种抗蚀剂组合物，其至少包含由以下通式（a）和（b）表示的重复单元的聚合物。
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公开(公告)号：US07618765B2
公开(公告)日：2009-11-17
申请号：US12003834
申请日：2008-01-02
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator which is a specific sulfonium salt compound. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]dodecane structure, di- or trihydroxyadamantyl units, and monocyclic lactone units.
摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）作为特定锍盐化合物的酸产生剂。 树脂（A）是包含具有疏水四环[4.4.0.12,5.17,10]十二烷结构的叔烷基保护基单元，二羟基金刚烷基单元和三羟基金刚烷基单元和单环内酯单元的聚合物。
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公开(公告)号：US06835525B2
公开(公告)日：2004-12-28
申请号：US10073223
申请日：2002-02-13
IPC分类号： G03F7038
CPC分类号： C08F224/00 , C08F216/16 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译： 通过使（甲基）丙烯酸衍生物与乙烯基醚化合物，烯丙基醚化合物和含氧脂环族烯烃化合物共聚得到新的聚合物。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐腐蚀性和最小化的溶胀，并且使其自身具有电子束或深UV的微图形化。
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公开(公告)号：US07459261B2
公开(公告)日：2008-12-02
申请号：US11305118
申请日：2005-12-19
IPC分类号： G03F7/039
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： There is disclosed a resist composition which comprises, at least, a polymer in which a sulfonium salt having a polymerizable unsaturated bond, a (meth)acrylate having a lactone or a hydroxyl group as an adhesion group, and a (meth)acrylate having an ester substituted with an acid labile group are copolymerized. There can be provided a resist composition with high resolution which has high sensitivity and high resolution to high energy beam, especially to ArF excimer laser, F2 excimer laser, EUV, X-ray, EB, etc., has reduced line edge roughness, and comprises a polymeric acid generator which has insolubility in water, and sufficient thermal stability and preservation stability.
摘要翻译： 公开了一种抗蚀剂组合物，其至少包含其中具有可聚合不饱和键的锍盐，具有内酯或羟基的（甲基）丙烯酸酯作为粘合基团的聚合物和（甲基）丙烯酸酯具有 由酸不稳定基团取代的酯被共聚。 可以提供具有高分辨率的抗蚀剂组合物，其对高能量束具有高灵敏度和高分辨率，特别是对于ArF准分子激光器，F2准分子激光器，EUV，X射线，EB等，具有降低的线边缘粗糙度，以及 包括在水中具有不溶性和足够的热稳定性和保存稳定性的聚合酸产生剂。
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公开(公告)号：US20080124652A1
公开(公告)日：2008-05-29
申请号：US11984614
申请日：2007-11-20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]-dodecane structure, hydroxyadamantane units, monocyclic lactone units, and carboxylic acid units. The acid generator (B) is a specific sulfonium salt compound.
摘要翻译： 正型抗蚀剂组合物包含（A）在酸作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含具有疏水性四环[4.4.0.1 2,5,7,10-] - 十二烷结构的叔烷基保护基单元的聚合物，羟基金刚烷 单体，单环内酯单元和羧酸单元。 酸产生剂（B）是特定的锍盐化合物。
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