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    Resist composition and patterning process using the same
    1.
    发明申请
    Resist composition and patterning process using the same 有权
    抗蚀剂组成和图案化工艺使用相同

    公开(公告)号：US20070111140A1

    公开(公告)日：2007-05-17

    申请号：US11580962

    申请日：2006-10-16

    申请人： Jun Hatakeyama ,  Koji Hasegawa ,  Youichi Ohsawa ,  Seiichiro Tachibana

    发明人： Jun Hatakeyama ,  Koji Hasegawa ,  Youichi Ohsawa ,  Seiichiro Tachibana

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0045 ,  G03F7/0397 ,  Y10S430/111 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： There is disclosed a resist composition which shows high sensitivity and high resolution on exposure to high energy beam, provides reduced Line Edge Roughness because swelling at the time of development is reduced, provides minor amounts of residue after development, has excellent dry etching resistance, and can also be used suitably for the liquid immersion lithography; and a patterning process using the resist composition. There can be provided a resist composition which comprises, at least, a polymer including repeating units represented by the following general formulae (a) and (b).

    摘要翻译： 公开了一种抗蚀剂组合物，其在高能量束暴露时显示出高灵敏度和高分辨率，由于在显影时的膨胀减小，提供降低的线边缘粗糙度，在显影后提供少量残留物，具有优异的耐干蚀刻性，以及 也可以适用于液浸光刻; 以及使用抗蚀剂组合物的图案化工艺。 可以提供一种抗蚀剂组合物，其至少包含由以下通式（a）和（b）表示的重复单元的聚合物。

    Resist composition and patterning process using the same
    2.
    发明授权
    Resist composition and patterning process using the same 有权
    抗蚀剂组成和图案化工艺使用相同

    公开(公告)号：US07629106B2

    公开(公告)日：2009-12-08

    申请号：US11580962

    申请日：2006-10-16

    申请人： Jun Hatakeyama ,  Koji Hasegawa ,  Youichi Ohsawa ,  Seiichiro Tachibana

    发明人： Jun Hatakeyama ,  Koji Hasegawa ,  Youichi Ohsawa ,  Seiichiro Tachibana

    IPC分类号： G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/0397 ,  Y10S430/111 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： There is disclosed a resist composition which shows high sensitivity and high resolution on exposure to high energy beam, provides reduced Line Edge Roughness because swelling at the time of development is reduced, provides minor amounts of residue after development, has excellent dry etching resistance, and can also be used suitably for the liquid immersion lithography; and a patterning process using the resist composition. There can be provided a resist composition which comprises, at least, a polymer including repeating units represented by the following general formulae (a) and (b).

    摘要翻译： 公开了一种抗蚀剂组合物，其在高能量束暴露时显示出高灵敏度和高分辨率，由于在显影时的膨胀减小，提供降低的线边缘粗糙度，在显影后提供少量残留物，具有优异的耐干蚀刻性，以及 也可以适用于液浸光刻; 以及使用抗蚀剂组合物的图案化工艺。 可以提供一种抗蚀剂组合物，其至少包含由以下通式（a）和（b）表示的重复单元的聚合物。

    Resist composition and patterning process using the same
    4.
    发明申请
    Resist composition and patterning process using the same 有权
    抗蚀剂组成和图案化工艺使用相同

    公开(公告)号：US20060147836A1

    公开(公告)日：2006-07-06

    申请号：US11305118

    申请日：2005-12-19

    申请人： Jun Hatakeyama ,  Youichi Ohsawa ,  Seiichiro Tachibana

    发明人： Jun Hatakeyama ,  Youichi Ohsawa ,  Seiichiro Tachibana

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： There is disclosed a resist composition which comprises, at least, a polymer in which a sulfonium salt having a polymerizable unsaturated bond, a (meth)acrylate having a lactone or a hydroxyl group as an adhesion group, and a (meth)acrylate having an ester substituted with an acid labile group are copolymerized. There can be provided a resist composition with high resolution which has high sensitivity and high resolution to high energy beam, especially to ArF excimer laser, F2 excimer laser, EUV, X-ray, EB, etc., has reduced line edge roughness, and comprises a polymeric acid generator which has insolubility in water, and sufficient thermal stability and preservation stability.

    摘要翻译： 公开了一种抗蚀剂组合物，其至少包含其中具有可聚合不饱和键的锍盐，具有内酯或羟基的（甲基）丙烯酸酯作为粘合基团的聚合物和（甲基）丙烯酸酯具有 由酸不稳定基团取代的酯被共聚。 可以提供具有高分辨率的抗蚀剂组合物，其对高能量束具有高灵敏度和高分辨率，特别是对于ArF准分子激光器，F 2/2准分子激光器，EUV，X射线，EB等。 降低了线边缘粗糙度，并且包括在水中具有不溶性，并具有足够的热稳定性和保存稳定性的聚合酸产生剂。

    Sulfonium salt-containing polymer, resist composition, and patterning process
    6.
    发明授权
    Sulfonium salt-containing polymer, resist composition, and patterning process 有权
    含锍盐的聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US08048610B2

    公开(公告)日：2011-11-01

    申请号：US12428933

    申请日：2009-04-23

    申请人： Youichi Ohsawa ,  Jun Hatakeyama ,  Seiichiro Tachibana ,  Takeshi Kinsho

    发明人： Youichi Ohsawa ,  Jun Hatakeyama ,  Seiichiro Tachibana ,  Takeshi Kinsho

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/11

    CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F220/30 ,  C08F220/38 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/143 ,  Y10S430/167

    摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译： 提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。 该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。