公开(公告)号：US06172898B2

公开(公告)日：2001-01-09

申请号：US09516358

申请日：2000-03-01

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： G11C1124

CPC分类号： H01L27/10867 ,  H01L27/10832 ,  H01L27/10885 ,  Y10S438/982

摘要： Trench capacitors are arranged in the form of a matrix at a constant pitch in row directions while being sequentially shifted between adjacent rows by a predetermined pitch. An element isolating insulator film is formed so as to surround active regions, each of which is adjacent to adjacent two capacitors in row directions, together with a partial region of the two capacitors. Transistors, which have gate electrodes continuously formed as word lines, are formed so as to be adjacent to the respective capacitors. One of the source and drain diffusion layers is connected to the capacitor node layer of a corresponding one of the capacitors via a connecting conductor. The other of the source and drain diffusion layers serves as a bit line contact layer shared by adjacent two transistors in the row directions, so that bit lines connected to the respective bit line contact layers in the row directions are formed. Three word lines are provided between adjacent bit line contact layers. By providing such a layout of a DRAM cell array, it is possible to decrease the area occupied by a unit memory cell while ensuring the capacity of a trench capacitor.

摘要翻译： 沟槽电容器以矩阵形式以行方向以恒定的间距布置，同时以相邻行之间顺序地移动预定间距。 元件隔离绝缘膜形成为围绕有源区域，其中的每一个与行方向上的相邻的两个电容器相邻，以及两个电容器的部分区域。 具有连续形成为字线的栅电极的晶体管形成为与各电容器相邻。 源极和漏极扩散层中的一个通过连接导体连接到相应的一个电容器的电容器节点层。 源极和漏极扩散层中的另一个用作相邻两个晶体管在行方向上共享的位线接触层，从而形成连接到行方向上的各个位线接触层的位线。 在相邻位线接触层之间提供三条字线。 通过提供这样的DRAM单元阵列的布局，可以在确保沟槽电容器的容量的同时减小单位存储单元占用的面积。

公开(公告)号：US09130034B2

公开(公告)日：2015-09-08

申请号：US14101131

申请日：2013-12-09

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L27/108 ,  H01L29/78 ,  H01L27/22 ,  H01L29/66 ,  H01L29/10

CPC分类号： H01L29/7813 ,  H01L21/28518 ,  H01L21/743 ,  H01L21/76224 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/228 ,  H01L29/1095 ,  H01L29/42356 ,  H01L29/665 ,  H01L29/66734 ,  H01L29/78

摘要： According to an embodiment, semiconductor device includes a semiconductor substrate, first and second isolation regions provided in the semiconductor substrate, extending in a first direction, and adjacent to each other, first and second word lines provided in the semiconductor substrate, extending in a second direction crossing the first direction, and adjacent to each other, first and second upper insulating regions provided on the first and second word lines, extending in the second direction, and adjacent to each other, a source/drain diffusion region provided in a surface area of the semiconductor substrate and between the first and second isolation regions, and including a portion positioned between the first and second upper insulating regions, and a first conductive portion provided in the source/drain diffusion region and formed of a material containing metal.

摘要翻译： 根据实施例，半导体器件包括半导体衬底，设置在半导体衬底中的第一和第二隔离区域，其在第一方向上延伸并彼此相邻，设置在半导体衬底中的第一和第二字线在第二方向上延伸 方向与第一方向交叉并彼此相邻;第一和第二上绝缘区，设置在第一和第二字线上，沿第二方向延伸并彼此相邻，设置在表面区域中的源极/漏极扩散区域 并且包括位于第一和第二上部绝缘区域之间的部分和设置在源极/漏极扩散区域中并由含有金属的材料形成的第一导电部分。

公开(公告)号：US09000545B2

公开(公告)日：2015-04-07

申请号：US13236582

申请日：2011-09-19

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetic random access memory includes a semiconductor substrate, an MTJ element formed from a perpendicular magnetization film and arranged above the semiconductor substrate, and a stress film including at least one of a tensile stress film arranged on an upper side of the MTJ element to apply a stress in a tensile direction with respect to the semiconductor substrate and a compressive stress film arranged on a lower side of the MTJ element to apply a stress in a compressive direction with respect to the semiconductor substrate.

摘要翻译： 磁性随机存取存储器包括半导体衬底，由垂直磁化膜形成并且布置在半导体衬底之上的MTJ元件，以及包括布置在MTJ元件的上侧上的拉伸应力膜中的至少一个的应力膜以施加 相对于半导体基板的拉伸方向的应力和布置在MTJ元件的下侧的压应力膜相对于半导体基板在压缩方向施加应力。

公开(公告)号：US08587042B2

公开(公告)日：2013-11-19

申请号：US12719729

申请日：2010-03-08

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L21/02

CPC分类号： H01L27/228 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/0207 ,  H01L43/08

摘要： An aspect of the present disclosure, there is provided a magnetoresistive random access memory device, including, an active area formed on a semiconductor substrate in a first direction, a magnetoresistive effect element formed on the active area and storing data by a change in resistance value, a gate electrode of a cell transistor formed on each side of the magnetoresistive effect element on the active area in a second direction, a bit line contact formed on the active area and arranged alternately with the magnetoresistive effect element, a first bit line connected to the magnetoresistive effect, and a second bit line connected to the bit line contact.

摘要翻译： 本发明的一个方面提供了一种磁阻随机存取存储器件，包括：在第一方向上形成在半导体衬底上的有源区，形成在有源区上的磁阻效应元件，并通过电阻值的变化存储数据 形成在有源区域的第二方向上的磁阻效应元件的每一侧上的单元晶体管的栅电极，形成在有源区上并与磁阻效应元件交替布置的位线接触，第一位线连接到 磁阻效应，以及与位线接触连接的第二位线。

公开(公告)号：US08549547B2

公开(公告)日：2013-10-01

申请号：US12882949

申请日：2010-09-15

申请人： Nobuaki Onagi ,  Yasutomo Aman ,  Haruki Tokumaru ,  Yoshimichi Takano ,  Daiichi Koide ,  Takeshi Kajiyama ,  Masami Nishida

发明人： Nobuaki Onagi ,  Yasutomo Aman ,  Haruki Tokumaru ,  Yoshimichi Takano ,  Daiichi Koide ,  Takeshi Kajiyama ,  Masami Nishida

IPC分类号： G11B17/04 ,  G11B17/03

CPC分类号： G11B17/0284 ,  G11B17/056 ,  G11B17/32

摘要： A disclosed disk clamping mechanism includes a turntable fixed on a rotational shaft of a spindle motor to rotate a flexible thin optical disk, a stabilizer member configured to suppress a run-out of the flexible thin optical disk by an applying aerodynamic force to the rotating flexible thin optical disk so as to stabilize the run-out of the rotating flexible thin optical disk, and a clamper movably supported in a center of the stabilizer member in a direction perpendicular to a surface of the flexible thin optical disk. In the disclosed disk clamping mechanism, the flexible thin optical disk is sandwiched between the turntable and the clamper such that the turntable and the clamper rotate the flexible thin optical member sandwiched in-between.

摘要翻译： 所公开的盘夹紧机构包括：固定在主轴电动机的旋转轴上以旋转柔性薄型光盘的转盘;稳定器构件，其被配置为通过施加空气动力力来抑制柔性薄型光盘的旋转， 以便稳定旋转的柔性薄型光盘的跳动，以及在垂直于柔性薄型光盘的表面的方向上可移动地支撑在稳定器构件的中心的夹持器。 在所公开的光盘夹紧机构中，柔性薄型光盘被夹在转台和夹持器之间，使得转盘和夹持器旋转夹在其间的柔性薄光学部件。

公开(公告)号：US08309950B2

公开(公告)日：2012-11-13

申请号：US12700536

申请日：2010-02-04

申请人： Masayoshi Iwayama ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Masayoshi Iwayama ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion on a channel region between the source/drain regions. Third semiconductor layers are on the first portions of the second semiconductor layer. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. Contact plugs are in the first semiconductor layers, the first portions of the second semiconductor layers and the third semiconductor layers in the source/drain regions. A diameter of the contact plug in the second semiconductor layer is smaller than a diameter of the contact plug in the first and third semiconductor layers.

摘要翻译： 第一半导体层位于半导体衬底上的源/漏区中。 第二半导体层包括第一半导体层上的第一部分和源/漏区之间的沟道区上的第二部分。 第三半导体层位于第二半导体层的第一部分上。 栅电极经由绝缘膜在第二半导体层的第二部分周围。 接触插塞位于第一半导体层中，第二半导体层的第一部分和源/漏区中的第三半导体层。 第二半导体层中的接触插塞的直径小于第一和第三半导体层中的接触插塞的直径。

公开(公告)号：US20120217594A1

公开(公告)日：2012-08-30

申请号：US13236582

申请日：2011-09-19

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： According to one embodiment, a magnetic random access memory includes a semiconductor substrate, an MTJ element formed from a perpendicular magnetization film and arranged above the semiconductor substrate, and a stress film including at least one of a tensile stress film arranged on an upper side of the MTJ element to apply a stress in a tensile direction with respect to the semiconductor substrate and a compressive stress film arranged on a lower side of the MTJ element to apply a stress in a compressive direction with respect to the semiconductor substrate.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括半导体衬底，由垂直磁化膜形成并且布置在半导体衬底之上的MTJ元件，以及应力膜，其包括布置在半导体衬底的上侧的拉伸应力膜中的至少一个 相对于半导体基板在拉伸方向施加应力的MTJ元件和布置在MTJ元件的下侧的压应力膜，以相对于半导体基板在压缩方向施加应力。

公开(公告)号：US08208289B2

公开(公告)日：2012-06-26

申请号：US12369555

申请日：2009-02-11

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  H01L27/222

摘要： A magnetoresistive element includes first, second, and third fixed layers, first, second, and third spacer layers, and a free layer. The first fixed layer is made of a ferromagnetic material and having an invariable magnetization direction. The first spacer layer is formed on the first fixed layer and made of an insulator. The free layer is formed on the first spacer layer, made of a ferromagnetic material, and having a variable magnetization direction. The second spacer layer is formed on the free layer and made of a nonmagnetic material. The second fixed layer is formed on the second spacer layer, made of a ferromagnetic material, and having an invariable magnetization direction. The third spacer layer is formed below the first fixed layer and made of a nonmagnetic material. The third fixed layer is formed below the third spacer layer, made of a ferromagnetic material, and having an invariable magnetization direction.

摘要翻译： 磁阻元件包括第一，第二和第三固定层，第一，第二和第三间隔层，以及自由层。 第一固定层由铁磁材料制成并且具有不变的磁化方向。 第一间隔层形成在第一固定层上并由绝缘体制成。 自由层形成在第一间隔层上，由铁磁材料制成，具有可变的磁化方向。 第二间隔层形成在自由层上并由非磁性材料制成。 第二固定层形成在第二间隔层上，由铁磁材料制成，具有不变的磁化方向。 第三间隔层形成在第一固定层下方并由非磁性材料制成。 第三固定层形成在第三间隔层的下方，由铁磁材料制成，具有不变的磁化方向。

公开(公告)号：US08203193B2

公开(公告)日：2012-06-19

申请号：US13163349

申请日：2011-06-17

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： H01L29/82 ,  G11C11/00 ,  G11C11/14

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228

摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.

摘要翻译： 磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入 根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域 第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻 。

公开(公告)号：US08081505B2

公开(公告)日：2011-12-20

申请号：US12556389

申请日：2009-09-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。