Coating composition for stressing material for prestressed concrete
    72.
    发明申请
    Coating composition for stressing material for prestressed concrete 审中-公开
    预应力混凝土应力材料涂层组合物

    公开(公告)号:US20060014907A1

    公开(公告)日:2006-01-19

    申请号:US10527696

    申请日:2003-06-03

    IPC分类号: C08G63/91 C08L67/08

    摘要: Disclosed is a coating composition for a tendon for prestressed concrete; wherein being applied on the surface of the tendon for a tendon for prestressed concrete; comprising oxidation-curing type resin modified with fatty acid, and metal catalyst to promote the curing of the resin; and curing time thereof is adjusted so that tensioning by the tendon can be exerted 30 days or later after casting of the concrete. The coating composition can be used safely almost without cutaneous stimulation, and enable effective tensioning even after hardening of the concrete when applied to massive concrete structure. Further, the coating composition exhibits excellent storage stability.

    摘要翻译: 公开了用于预应力混凝土的腱的涂料组合物; 其中施加在用于预应力混凝土的腱的腱的表面上; 包括用脂肪酸改性的氧化固化型树脂和促进树脂固化的金属催化剂; 并且调节其固化时间,使得在浇筑混凝土之后30天或更长时间可以施加腱的张紧。 涂料组合物几乎可以安全地使用,无需皮肤刺激,即使在施加到大块混凝土结构时,混凝土硬化后也能有效拉伸。 此外,涂料组合物表现出优异的储存稳定性。

    Non-volatile semiconductor memory
    73.
    发明申请
    Non-volatile semiconductor memory 失效
    非易失性半导体存储器

    公开(公告)号:US20050281086A1

    公开(公告)日:2005-12-22

    申请号:US11152330

    申请日:2005-06-14

    摘要: A non-volatile semiconductor memory having a memory transistor including a stacked-layer film formed between a semiconductor substrate and a gate electrode and having a charge storage ability, a first conductivity type region of the semiconductor substrate in which a channel is formed under the control of the gate electrode via the stacked-layer film, and two second conductivity type regions formed at the semiconductor substrate sandwiching the first conductivity type region therebetween, the memory transistor having a channel length estimated as the boundary of occurrence of a short channel effect differing between the time of a write operation and the time of a read operation and has a channel length of the actual device between the different channel lengths.

    摘要翻译: 一种非易失性半导体存储器,具有存储晶体管,该存储晶体管包括形成在半导体衬底和栅电极之间并具有电荷存储能力的叠层膜,所述半导体衬底的第一导电类型区域在其中形成在该控制下的沟道 以及形成在半导体衬底上的第二导电类型区域的两个第二导电类型区域夹在其间的第一导电类型区域,存储晶体管的沟道长度被估计为短沟道效应的出现边界, 写操作的时间和读操作的时间,并且具有不同通道长度之间的实际设备的通道长度。

    Terminal arrangement of motor and capacitor motor
    74.
    发明授权
    Terminal arrangement of motor and capacitor motor 失效
    电机和电容电机的端子排列

    公开(公告)号:US06975052B2

    公开(公告)日:2005-12-13

    申请号:US10921392

    申请日:2004-08-19

    IPC分类号: H02K3/52 H02K5/22 H02K7/00

    摘要: A terminal arrangement of a motor has a terminal base formed with a plurality of terminal pins, the terminal base being fixed detachably on a stator iron core of a motor, terminal pins formed on bobbins, connected electrically with windings wound around the bobbins, a printed circuit board arranged on the stator iron core so as to connect electrically the terminal pins formed on the bobbins with the terminal pins formed on the terminal base, and an end bracket arranged so as to cover the printed circuit board. A hole is formed in the stator iron core, and an earth electrode is projected from the terminal base, and inserted into the hole so as to be connected electrically with the stator iron core, the earth electrode being connected electrically to one of the terminal pins formed on the terminal base. A capacitor motor has a motor having a stator iron core, and a phase advancing capacitor fixed detachably on the stator iron core.

    摘要翻译: 电动机的端子装置具有形成有多个端子销的端子基座,端子基座可拆卸地固定在电动机的定子铁心上,端子销形成在线轴上,与缠绕在线轴上的绕组电连接,印刷 布置在定子铁芯上的电路板,以便将形成在线轴上的端子销与形成在端子座上的端子针电连接,以及端盖,以便覆盖印刷电路板。 在定子铁芯上形成孔,接地电极从端子基座突出,插入孔内,与定子铁心电连接,接地电极与端子脚之一电连接 形成在终端基地。 电容器电动机具有定子铁心的电动机和可分离地固定在定子铁芯上的相位前进电容器。

    Coating composition for tendon for prestressed concrete
    75.
    发明申请
    Coating composition for tendon for prestressed concrete 审中-公开
    预应力混凝土腱涂层组成

    公开(公告)号:US20050171302A1

    公开(公告)日:2005-08-04

    申请号:US10514039

    申请日:2003-05-09

    CPC分类号: C08G18/58 C09D175/04

    摘要: Disclosed is a coating composition for PC tendon, which is applied on surface of the PC tendon. This composition includes epoxy resin, multifunctional isocyanate compound, calcium oxide and water, and further includes water-absorbing polymer as necessary. A curing time thereof is adjusted so that tensioning by the PC tendon can be exerted 30 days or later after casting of the concrete. Accordingly, even when applied to a massive concrete structure, the coating composition enables effective tensioning after hardening of the concrete, while exhibiting excellent storage stability.

    摘要翻译: 公开了一种用于PC筋的涂料组合物,其用于PC筋的表面上。 该组合物包括环氧树脂,多官能异氰酸酯化合物,氧化钙和水,并且根据需要还包括吸水性聚合物。 调整其固化时间,以便在浇筑混凝土后30天或更长时间内可以施加PC腱的张紧。 因此,即使应用于大型混凝土结构体,涂料组合物在混凝土硬化后能够有效地拉伸,同时表现出优异的储存稳定性。

    Apparatus for making web comprising continuous fibers
    76.
    发明授权
    Apparatus for making web comprising continuous fibers 有权
    用于制造包含连续纤维的纤维网的装置

    公开(公告)号:US06877970B2

    公开(公告)日:2005-04-12

    申请号:US10122209

    申请日:2002-04-16

    CPC分类号: D01D5/0985 D04H3/02

    摘要: An apparatus for producing a web of continuous fibers having a melt extruder, an endless belt running in one direction and a guide box located between the extruder and the belt. The guide box has front and rear walls as viewed in the running direction of the belt, a pair of side walls extending between the front and rear walls and upper and lower end openings. The fibers extruded from the extruder enter the upper end opening by suction exerted in the vicinity of the lower end opening. The guide box is formed in the front wall and/or the rear wall with intermediate opening(s) serving to introduce the outside air into the guide box.

    摘要翻译: 一种用于生产具有熔融挤出机,沿一个方向延伸的环形带和位于挤出机和带之间的引导箱的连续纤维网的设备。 引导箱具有沿着带的运行方向观察的前壁和后壁,在前后壁之间延伸的一对侧壁和上端开口和下端开口。 从挤出机挤出的纤维通过施加在下端开口附近的抽吸进入上端开口。 引导箱形成在前壁和/或后壁中,其中间开口用于将外部空气引入引导箱中。

    Laser boring method and system
    77.
    发明授权
    Laser boring method and system 有权
    激光钻孔方法和系统

    公开(公告)号:US06870128B2

    公开(公告)日:2005-03-22

    申请号:US10165966

    申请日:2002-06-10

    IPC分类号: B23K26/14 B23K26/38

    摘要: A method for boring a well with a laser beam is provided, the method comprising: shining the laser beam into a conduit, wherein the laser beam is guided through the conduit by the internal reflectivity of said conduit; and extending the conduit into the well, so that the laser beam exiting the conduit shines onto an area in the well to be bored. A system for boring a well with a laser beam is also provided, the system comprising: a means for shining the laser beam into a conduit; wherein the laser beam is guided through the conduit by the internal reflectivity of said conduit; and a means for extending the conduit into the well, so that the laser beam exiting the conduit shines onto an area in the well to be bored. An apparatus is provided as well, comprising a conduit that is extendable into the well, and an inner surface inside of the conduit, wherein the inner surface is reflective to the laser beam.

    摘要翻译: 提供了一种用激光束钻孔的方法,所述方法包括:将激光束照射到导管中,其中通过所述导管的内部反射率将激光束引导通过导管; 并且将导管延伸到井中,使得离开管道的激光束照射到井的要钻孔的区域上。 还提供了一种用于用激光束钻孔的系统,该系统包括:用于将激光束照射到导管中的装置; 其中所述激光束通过所述导管的内部反射率被引导通过所述导管; 以及用于将管道延伸到井中的装置,使得离开管道的激光束照射到井的要钻孔的区域上。 还提供一种装置,其包括可延伸到井中的导管和导管内部的内表面,其中内表面反射激光束。

    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF PRODUCING THE SAME
    78.
    发明申请
    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF PRODUCING THE SAME 失效
    非挥发性半导体存储器件及其制造方法

    公开(公告)号:US20050020013A1

    公开(公告)日:2005-01-27

    申请号:US10922141

    申请日:2004-08-19

    摘要: The present invention prevents production of residue which causes short-circuit between word lines. A memory cell comprises a channel formation region CH, charge storage films CSF each comprised of a plurality of stacked dielectric films, two storages comprised of regions of the charge storage films CSF overlapping the two ends of the channel formation region CH, a single-layer dielectric film DF2 contacting the channel formation region CH between the storages, auxiliary layers (for example, bit lines BL1 and BL2) formed on two impurity regions S/D, two first control electrodes CG1 and CG2 formed on the auxiliary layers with dielectric film interposed and positioned on the storages, and a second control electrode WL buried in a state insulated from the first control electrodes CG1 and CG2 in a space between them and contacting the single-layer dielectric film DF2. Since the main regions on facing surfaces of the first control electrodes CG1 and CG2 become forward tapered, conductive residue is not left at the time of processing the second control electrode WL.

    摘要翻译: 本发明防止产生在字线之间短路的残留物。 存储单元包括沟道形成区域CH,每个由多个堆叠的电介质膜组成的电荷存储膜CSF,由与沟道形成区域CH的两端重叠的电荷存储膜CSF的区域组成的两个存储器,单层 电介质膜DF2与存储器之间的沟道形成区域CH,形成在两个杂质区域S / D上的辅助层(例如位线BL1和BL2)接触,形成在辅助层上的两个第一控制电极CG1和CG2, 并且位于存储器上,以及第二控制电极WL,其在与它们之间的空间中与第一控制电极CG1和CG2绝缘的状态下被掩埋并与单层电介质膜DF2接触。 由于第一控制电极CG1和CG2的相对表面上的主要区域向前渐变,所以在处理第二控制电极WL时不会导致残留物。

    Non-volatile semiconductor memory device and a method of producing the same
    80.
    发明授权
    Non-volatile semiconductor memory device and a method of producing the same 失效
    非易失性半导体存储器件及其制造方法

    公开(公告)号:US06803620B2

    公开(公告)日:2004-10-12

    申请号:US10168921

    申请日:2002-10-02

    IPC分类号: H01L27108

    摘要: The present invention prevents production of residue which causes short-circuit between word lines. A memory cell comprises a channel formation region CH, charge storage films CSF each comprised of a plurality of stacked dielectric films, two storages comprised of regions of the charge storage films CSF-overlapping the two ends of the channel formation region CH, a single-layer dielectric film DF2 contacting the channel formation region CH between the storages, auxiliary layers (for example, bit lines BL1 and BL2) formed on two impurity regions S/D, two first control-electrodes CG1 and CG2 formed on the auxiliary layers with dielectric film interposed and positioned on the storages, and a second control electrode WL buried in a state insulated from the first control electrodes CG1 and CG2 in a space between them and contacting the single-layer dielectric film DF2. Since the main regions on facing surfaces of the first control electrodes CG1 and CG2 become forward tapered, conductive residue is not left at the time of processing the second control electrode WL.

    摘要翻译: 本发明防止产生在字线之间短路的残留物。 存储单元包括沟道形成区域CH,每个由多个堆叠的电介质膜构成的电荷存储膜CSF,由电荷存储膜的区域组成的两个存储区域CSF,与沟道形成区域CH的两端重叠, 接触存储器之间的沟道形成区域CH的层间电介质膜DF2,形成在两个杂质区域S / D上的辅助层(例如,位线BL1和BL2),形成在具有电介质的辅助层上的两个第一控制电极CG1和CG2 插入并定位在存储器上的膜;以及第二控制电极WL,其在与它们之间的空间中与第一控制电极CG1和CG2绝缘的状态下被掩埋并与单层电介质膜DF2接触。 由于第一控制电极CG1和CG2的相对表面上的主要区域向前渐变,所以在处理第二控制电极WL时不会导致残留物。