Thin film shape memory alloy actuated microrelay

    公开(公告)号:US07084726B2

    公开(公告)日:2006-08-01

    申请号:US10661035

    申请日:2003-09-15

    IPC分类号: H01H51/22

    摘要: A microrelay device formed on a silicon substrate wafer for use in opening and closing a current path in a circuit. A pair of electrically conducting latching beams are attached at their proximal ends to terminals on the substrate. Proximal ends of the beams have complementary shapes which releasably fit together to latch the beams and close the circuit. A pair of shape memory alloy actuators are selectively operated to change shapes which bend one of the beams in a direction which latches the distal ends, or bend the other beam to release the distal ends and open the circuit. The microrelay is bistable in its two positions, and power to the actuators is applied only for switching it open or closed.

    Method for sputtering TiNi shape-memory alloys
    73.
    发明申请
    Method for sputtering TiNi shape-memory alloys 审中-公开
    溅射TiNi形状记忆合金的方法

    公开(公告)号:US20050159808A1

    公开(公告)日:2005-07-21

    申请号:US11027814

    申请日:2004-12-28

    摘要: A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

    摘要翻译: 公开了一种薄膜装置,例如血管内支架。 该装置由无定形的薄膜(i)形成,该薄膜(i)由溅射的镍钛诺形状记忆合金形成,其以奥氏体状态限定具有0.5-50微米厚度的开放内部体积,具有奥氏体光洁度 温度低于37℃; 并且在37℃下表现出大于3%的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造,并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。

    Seating system
    74.
    发明申请
    Seating system 有权
    座位系统

    公开(公告)号:US20050082896A1

    公开(公告)日:2005-04-21

    申请号:US10974568

    申请日:2004-10-27

    摘要: An improved seating system that includes a seat back assembly (10) that is fabricated to include a seat back (12) with a first panel portion (14) that is optionally secured to a second panel portion (16) with one or more fasteners such as welds, adhesives, tack-offs, steel brackets or otherwise. The first panel portion (14), the second panel portion (16) or both preferably are plastic. The seat back assembly (10) may include one or more integrated reinforcement structures (20).

    摘要翻译: 一种改进的座椅系统,其包括座椅靠背组件(10),座椅靠背组件(10)制造成包括具有第一面板部分(14)的座椅靠背(12),所述第一面板部分(14)可选地通过一个或多个紧固件固定到第二面板部分 作为焊接,粘合剂,粘合剂,钢支架或其他。 第一面板部分(14),第二面板部分(16)或两者最好是塑料的。 座椅靠背组件(10)可以包括一个或多个集成的加强结构(20)。

    Seating system and method of forming same
    75.
    发明申请
    Seating system and method of forming same 有权
    座椅系统及其形成方法

    公开(公告)号:US20050040690A1

    公开(公告)日:2005-02-24

    申请号:US10668649

    申请日:2003-09-23

    IPC分类号: B60N2/68 A47C7/02

    CPC分类号: B60N2/686

    摘要: The present invention discloses a seating system that includes a seat back (20) with one or more plastic panels (22, 24) that extend across a lateral distance (D2) of the seat back (20). The seat back (20) preferably includes one or more channel forming ribs (50, 54, 58). Optionally the seat back (20) will be anchored to a body of an automotive vehicle with an improved attachment system (100).

    摘要翻译: 本发明公开了一种座椅系统,其包括具有一个或多个塑料面板(22,24)的座椅靠背(20),该塑料面板延伸穿过座椅靠背(20)的横向距离(D2)。 座椅靠背(20)优选地包括一个或多个通道形成肋(50,54,58)。 可选地,座椅靠背(20)将被锚固到具有改进的附接系统(100)的机动车辆的车身上。

    Method of fabrication of free standing shape memory alloy thin film
    76.
    发明授权
    Method of fabrication of free standing shape memory alloy thin film 有权
    自立式记忆合金薄膜的制造方法

    公开(公告)号:US06790298B2

    公开(公告)日:2004-09-14

    申请号:US09902856

    申请日:2001-07-10

    IPC分类号: C22C4500

    摘要: Methods of fabricating a free standing thin film of shape memory alloy material, and products made by the methods. A sacrificial layer of a metallic material is deposited onto the surface of a substrate. Then an amorphous shape memory alloy is sputter deposited onto the outer surface of the sacrificial layer. The sacrificial layer is etched away, leaving the thin film free standing, that is separated from the substrate. The thin film is annealed by heating into a crystalline state, with the annealing step carried out either after the film has been separated from the substrate, or while remaining attached to it.

    摘要翻译: 制造形状记忆合金材料的自立薄膜的方法,以及由该方法制成的产品。 将金属材料的牺牲层沉积在基底的表面上。 然后将非晶态记忆合金溅射沉积到牺牲层的外表面上。 牺牲层被蚀刻掉,使薄膜自由站立,从衬底分离。 该薄膜通过加热退火至结晶状态,退火步骤是在薄膜从基材分离出之后进行的,或者在保持附着于其上时进行。

    Thin film shape memory alloy actuated microrelay
    78.
    发明授权
    Thin film shape memory alloy actuated microrelay 失效
    薄膜形状记忆合金致动微型继电器

    公开(公告)号:US06624730B2

    公开(公告)日:2003-09-23

    申请号:US09821840

    申请日:2001-03-28

    IPC分类号: H01H5122

    摘要: A microrelay device formed on a silicon substrate wafer for use in opening and closing a current path in a circuit. A pair of electrically conducting latching beams are attached at their proximal ends to terminals on the substrate. Proximal ends of the beams have complementary shapes which releasably fit together to latch the beams and close the circuit. A pair of shape memory alloy actuators are selectively operated to change shapes which bend one of the beams in a direction which latches the distal ends, or bend the other beam to release the distal ends and open the circuit. The microrelay is bistable in its two positions, and power to the actuators is applied only for switching it open or closed.

    摘要翻译: 一种在硅衬底晶片上形成的用于打开和闭合电路中的电流通路的微型继电器件。 一对导电的锁定梁在其近端处附接到基板上的端子。 梁的近端具有可释放地装配在一起以锁定梁并闭合电路的互补形状。 一对形状记忆合金致动器被选择性地操作以改变沿着锁定远端的方向弯曲光束之一的形状,或者弯曲另一个光束以释放远端并打开电路。 微型继电器在其两个位置是双稳态的,并且致动器的电力仅用于将其打开或关闭。

    Method for sputtering tini shape-memory alloys
    79.
    发明授权
    Method for sputtering tini shape-memory alloys 有权
    溅射Tini形状记忆合金的方法

    公开(公告)号:US06533905B2

    公开(公告)日:2003-03-18

    申请号:US09768700

    申请日:2001-01-24

    IPC分类号: C23C1434

    摘要: A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

    摘要翻译: 公开了一种薄膜装置,例如血管内支架。 该装置由无定形的薄膜(i)形成,该薄膜(i)由溅射的镍钛诺形状记忆合金形成,其以奥氏体状态限定具有0.5-50微米厚度的开放内部体积,具有奥氏体光洁度 温度低于37℃。 并且在37℃下表现出大于3%的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造,并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。