公开(公告)号：US06790298B2

公开(公告)日：2004-09-14

申请号：US09902856

申请日：2001-07-10

申请人： A. David Johnson ,  Vikas Galhotra ,  Vikas Gupta

发明人： A. David Johnson ,  Vikas Galhotra ,  Vikas Gupta

IPC分类号： C22C4500

CPC分类号： A61L31/088 ,  A61L31/14 ,  A61L2400/16 ,  C23C14/0005 ,  C23C14/165 ,  C23F1/04

摘要： Methods of fabricating a free standing thin film of shape memory alloy material, and products made by the methods. A sacrificial layer of a metallic material is deposited onto the surface of a substrate. Then an amorphous shape memory alloy is sputter deposited onto the outer surface of the sacrificial layer. The sacrificial layer is etched away, leaving the thin film free standing, that is separated from the substrate. The thin film is annealed by heating into a crystalline state, with the annealing step carried out either after the film has been separated from the substrate, or while remaining attached to it.

摘要翻译： 制造形状记忆合金材料的自立薄膜的方法，以及由该方法制成的产品。 将金属材料的牺牲层沉积在基底的表面上。 然后将非晶态记忆合金溅射沉积到牺牲层的外表面上。 牺牲层被蚀刻掉，使薄膜自由站立，从衬底分离。 该薄膜通过加热退火至结晶状态，退火步骤是在薄膜从基材分离出之后进行的，或者在保持附着于其上时进行。

公开(公告)号：US06624730B2

公开(公告)日：2003-09-23

申请号：US09821840

申请日：2001-03-28

申请人： A. David Johnson ,  Vikas Galhotra ,  Vikas Gupta ,  Valery Martynov

发明人： A. David Johnson ,  Vikas Galhotra ,  Vikas Gupta ,  Valery Martynov

IPC分类号： H01H5122

CPC分类号： H01H1/0036 ,  H01H61/0107 ,  H01H2001/0047 ,  H01H2061/006

摘要： A microrelay device formed on a silicon substrate wafer for use in opening and closing a current path in a circuit. A pair of electrically conducting latching beams are attached at their proximal ends to terminals on the substrate. Proximal ends of the beams have complementary shapes which releasably fit together to latch the beams and close the circuit. A pair of shape memory alloy actuators are selectively operated to change shapes which bend one of the beams in a direction which latches the distal ends, or bend the other beam to release the distal ends and open the circuit. The microrelay is bistable in its two positions, and power to the actuators is applied only for switching it open or closed.

摘要翻译： 一种在硅衬底晶片上形成的用于打开和闭合电路中的电流通路的微型继电器件。 一对导电的锁定梁在其近端处附接到基板上的端子。 梁的近端具有可释放地装配在一起以锁定梁并闭合电路的互补形状。 一对形状记忆合金致动器被选择性地操作以改变沿着锁定远端的方向弯曲光束之一的形状，或者弯曲另一个光束以释放远端并打开电路。 微型继电器在其两个位置是双稳态的，并且致动器的电力仅用于将其打开或关闭。

公开(公告)号：US20110253525A1

公开(公告)日：2011-10-20

申请号：US13171243

申请日：2011-06-28

申请人： A. David Johnson ,  Valery V. Martynov ,  Vikas Gupta ,  Arani Bose

发明人： A. David Johnson ,  Valery V. Martynov ,  Vikas Gupta ,  Arani Bose

IPC分类号： C23C14/35

CPC分类号： A61F2/82 ,  A61F2/91 ,  A61F2/915 ,  A61F2002/91533 ,  A61F2002/9155 ,  C22F1/006 ,  C23C14/0005 ,  C23C14/14

摘要： A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

摘要翻译： 公开了一种薄膜装置，例如血管内支架。 该装置由无定形的薄膜形成（i）由溅射的镍钛诺形状记忆合金形成，其以奥氏体状态限定具有0.5-50微米厚度的开放内部体积，具有奥氏体光洁度 温度低于37℃。 并且在37℃下表现出大于3％的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造，并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。

公开(公告)号：US07040323B1

公开(公告)日：2006-05-09

申请号：US10638282

申请日：2003-08-07

申请人： Leticia Menchaca ,  A. David Johnson ,  Vikas Gupta ,  Valery Martynov

发明人： Leticia Menchaca ,  A. David Johnson ,  Vikas Gupta ,  Valery Martynov

IPC分类号： A61F6/06

CPC分类号： A61F6/14

摘要： Contraceptive intrauterine devices made of thin film shape memory alloy materials. The devices are formed in three-dimensional shapes which contact uterus tissue of a human or other mammal to prevent conception. In certain embodiments, structural features such as tails, fenestrations, ridges or grooves are formed on the devices to enhance the contraceptive effect.

公开(公告)号：US06746890B2

公开(公告)日：2004-06-08

申请号：US10198654

申请日：2002-07-17

申请人： Vikas Gupta ,  A. David Johnson ,  Letecia Menchaca ,  Valery Martynov

发明人： Vikas Gupta ,  A. David Johnson ,  Letecia Menchaca ,  Valery Martynov

IPC分类号： H01L2100

CPC分类号： A61F2/013 ,  A61B17/12 ,  A61B17/12022 ,  A61B17/12113 ,  A61B17/12131 ,  A61B17/12172 ,  A61B17/221 ,  A61B2017/00526 ,  A61B2017/00867 ,  A61B2017/1205 ,  A61B2017/2212 ,  A61F2/91 ,  A61F2002/018 ,  A61F2230/0006 ,  A61F2230/0063 ,  A61F2230/0067 ,  A61F2230/0069 ,  A61F2230/008

摘要： Methods for making thin film multiple layered three-dimensional devices using two-dimensional MEMS techniques for use in a variety of applications including endovascular, endolumenal, intracranial, and intraocular medical applications. In the general method, a thin film first layer of the device material is deposited over a release layer which in turn is deposited on a substrate. An other release layer is deposited on the first device layer, with portions of the other release layer removed, leaving a pattern in the first device layer. In a similar manner a second layer of device material is formed in a pattern overlying the first device layer with portions of the two layers joined together leaving a portion of the release layer between them. The two release layers are removed and the first and second layers of the device material are formed into a three-dimensional shape suitable for the desired end-use application.

公开(公告)号：US06533905B2

公开(公告)日：2003-03-18

申请号：US09768700

申请日：2001-01-24

申请人： A. David Johnson ,  Valery V. Martynov ,  Vikas Gupta ,  Arani Bose

发明人： A. David Johnson ,  Valery V. Martynov ,  Vikas Gupta ,  Arani Bose

IPC分类号： C23C1434

CPC分类号： A61F2/82 ,  A61F2/91 ,  A61F2/915 ,  A61F2002/91533 ,  A61F2002/9155 ,  C22F1/006 ,  C23C14/0005 ,  C23C14/14

摘要： A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

摘要翻译： 公开了一种薄膜装置，例如血管内支架。 该装置由无定形的薄膜（i）形成，该薄膜（i）由溅射的镍钛诺形状记忆合金形成，其以奥氏体状态限定具有0.5-50微米厚度的开放内部体积，具有奥氏体光洁度 温度低于37℃。 并且在37℃下表现出大于3％的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造，并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。

公开(公告)号：US08506767B2

公开(公告)日：2013-08-13

申请号：US13171243

申请日：2011-06-28

申请人： A. David Johnson ,  Valery V. Martynov ,  Vikas Gupta ,  Arani Bose

发明人： A. David Johnson ,  Valery V. Martynov ,  Vikas Gupta ,  Arani Bose

IPC分类号： C23C14/35

CPC分类号： A61F2/82 ,  A61F2/91 ,  A61F2/915 ,  A61F2002/91533 ,  A61F2002/9155 ,  C22F1/006 ,  C23C14/0005 ,  C23C14/14

摘要： A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0 5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

摘要翻译： 公开了一种薄膜装置，例如血管内支架。 该装置由无定形的薄膜（i）形成，该薄膜（i）由溅射的镍钛诺形状记忆合金形成，其以奥氏体状态限定具有0-50微米厚度的开放内部体积，具有奥氏体 完成温度低于37°C。 并且在37℃下表现出大于3％的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造，并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。

公开(公告)号：US20090183986A1

公开(公告)日：2009-07-23

申请号：US12357104

申请日：2009-01-21

申请人： A. David Johnson ,  Valery V. Martynov ,  Vikas Gupta ,  Arani Bose

发明人： A. David Johnson ,  Valery V. Martynov ,  Vikas Gupta ,  Arani Bose

IPC分类号： C23C14/34

CPC分类号： A61F2/82 ,  A61F2/91 ,  A61F2/915 ,  A61F2002/91533 ,  A61F2002/9155 ,  C22F1/006 ,  C23C14/0005 ,  C23C14/14

摘要： A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0 5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

摘要翻译： 公开了一种薄膜装置，例如血管内支架。 该装置由无定形的薄膜（i）形成，该薄膜（i）由溅射的镍钛诺形状记忆合金形成，其以奥氏体状态限定具有0-50微米厚度的开放内部体积，具有奥氏体 完成温度低于37°C。 并且在37℃下表现出大于3％的应力/应变恢复。该膨胀物可以以马氏体状态变形为基本上压实的构造，并且以其奥氏体状态呈现限定这种敞开的内部体积的形状。 还公开了一种用于形成该器件的溅射方法。

公开(公告)号：US09682286B2

公开(公告)日：2017-06-20

申请号：US15213970

申请日：2016-07-19

申请人： Hideomi Shishido ,  Vikas Gupta ,  Vinod Mahajan

发明人： Hideomi Shishido ,  Vikas Gupta ,  Vinod Mahajan

IPC分类号： A63B41/08 ,  A63B45/00 ,  B29C65/48 ,  B29C65/72 ,  B29C65/62 ,  B29C65/00 ,  B29L31/54

CPC分类号： A63B41/08 ,  A63B45/00 ,  B29C65/4835 ,  B29C65/62 ,  B29C65/72 ,  B29C66/7484 ,  B29L2031/545

摘要： The ball for ball games has a ball body and a spherical shell-shaped outer layer having a plurality of leather panels and disposed on the outside of the ball body. The plurality of leather panels each have a main body and an extending portion that is thinner than the main body and extends from a front-side portion of an outer end surface of the main body to configure an outer end surface of the leather panel. The extending portions of adjacent leather panels are bonded to each other with an adhesive and stitched together with a stitching thread. In the ball for ball games, the extending portion is provided with a reinforcing member for reinforcing an area thereof stitched with the stitching thread.

公开(公告)号：US09146798B2

公开(公告)日：2015-09-29

申请号：US13801849

申请日：2013-03-13

申请人： Vikas Gupta ,  Aby Jose

发明人： Vikas Gupta ,  Aby Jose

IPC分类号： G06F11/00 ,  G06F11/07 ,  G06F11/30

CPC分类号： G06F11/0748 ,  G06F11/0709 ,  G06F11/0763 ,  G06F11/3006 ,  G06F11/3051

摘要： In an example embodiment, a method of performing a health check on a process integration (PI) component is provided. A PI health check scenario is loaded into the PI component, the PI health check scenario including a reference to a list of checks. The PI health check scenario is then executed using the PI component, causing one or more checks in the list of checks to be performed at a predetermined frequency. The system can then automatically determine if one or more of the one or more checks fail.

摘要翻译： 在示例实施例中，提供了对过程集成（PI）组件执行健康检查的方法。 PI健康检查场景将加载到PI组件中，PI运行状况检查场景包括对检查列表的引用。 然后使用PI组件执行PI健康检查场景，使得以预定频率执行检查列表中的一个或多个检查。 然后，系统可以自动确定一个或多个检查中的一个或多个检查是否失败。