公开(公告)号：US20090183612A1

公开(公告)日：2009-07-23

申请号：US12225186

申请日：2007-02-14

申请人： Yoshihiro Yamaguchi ,  Takahiro Iriyama ,  Satoshi Ohnishi

发明人： Yoshihiro Yamaguchi ,  Takahiro Iriyama ,  Satoshi Ohnishi

IPC分类号： B26D5/00

CPC分类号： B26D7/22 ,  B23K9/013 ,  B23K10/00 ,  B23K26/02 ,  B23K26/38 ,  B23K37/006 ,  B26D5/00 ,  B26F3/004 ,  Y10T83/148 ,  Y10T83/159

摘要： A cutting machine secures safety of a worker during movement of a head without lowering production efficiency. When moving a cutting head without cutting material to be cut upon a table, a moving truck and the cutting head are moved at a higher speed as compared with when cutting the material to be cut. If, when the moving truck and the cutting head are moving at high speed, a worker who is present upon the table intercepts either of light beams which are located in front of and behind a horizontal beam, then this movement speed is decelerated to a safe low speed, but the task of cutting the material is not interrupted. Subsequently, when the worker approaches the horizontal beam closer, and contacts a wire or a bar in the vicinity of the horizontal beam, movement of the moving truck and the cutting head is forcibly stopped.

摘要翻译： 切割机在头部移动期间确保工人的安全性，而不降低生产效率。 当切割头没有切割切割材料在桌子上移动切割头时，与切割要切割的材料相比，移动的卡车和切割头以更高的速度移动。 如果当移动的卡车和切割头高速移动时，存在于工作台上的工人拦截位于水平梁前方和后方的光束之一，然后将该移动速度减速到安全 低速，但切割材料的任务不会中断。 随后，当工作人员靠近水平梁并且接触水平梁附近的线或杆时，强制停止移动的卡车和切割头的移动。

公开(公告)号：USD582449S1

公开(公告)日：2008-12-09

申请号：US29290751

申请日：2008-01-10

申请人： Yoshihiro Yamaguchi ,  Kazuhiro Kuraoka

设计人： Yoshihiro Yamaguchi ,  Kazuhiro Kuraoka

公开(公告)号：US20080251838A1

公开(公告)日：2008-10-16

申请号：US12118159

申请日：2008-05-09

申请人： Syotaro Ono ,  Yoshihiro Yamaguchi ,  Yusuke Kawaguchi ,  Kazutoshi Nakamura ,  Norio Yasuhara ,  Kenichi Matsushita ,  Shinichi Hodama ,  Akio Nakagawa

发明人： Syotaro Ono ,  Yoshihiro Yamaguchi ,  Yusuke Kawaguchi ,  Kazutoshi Nakamura ,  Norio Yasuhara ,  Kenichi Matsushita ,  Shinichi Hodama ,  Akio Nakagawa

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/7809

摘要： A semiconductor device includes: a semiconductor substrate, at least a surface portion thereof serving as a low-resistance drain layer of a first conductivity type; a first main electrode connected to the low-resistance drain layer; a high-resistance epitaxial layer of a second-conductivity type formed on the low-resistance drain layer; a second-conductivity type base layer selectively formed on the high-resistance epitaxial layer; a first-conductivity type source layer selectively formed in a surface portion of the second-conductivity type base layer; a trench formed in a region sandwiched by the second-conductivity type base layers with a depth extending from the surface of the high-resistance epitaxial layer to the semiconductor substrate; a jfet layer of the first conductivity type formed on side walls of the trench; an insulating layer formed in the trench; an LDD layer of the first-conductivity type formed in a surface portion of the second-conductivity type base layer so as to be connected to the first-conductivity type jfet layer around a top face of the trench; a control electrode formed above the semiconductor substrate so as to be divided into a plurality of parts, and formed on a gate insulating film formed on a part of the surface of the LDD layer, on surfaces of end parts of the first-conductivity type source layer facing each other across the trench, and on a region of the surface of the second-conductivity type base layer sandwiched by the LDD layer and the first-conductivity type source layer; and a second main electrode in ohmic contact with the first-conductivity type source layer and the second-conductivity type base layer so as to sandwich the control electrode.

摘要翻译： 半导体器件包括：半导体衬底，至少其表面部分用作第一导电类型的低电阻漏极层; 连接到所述低电阻漏极层的第一主电极; 形成在低电阻漏极层上的第二导电类型的高电阻外延层; 选择性地形成在高电阻外延层上的第二导电型基极层; 选择性地形成在所述第二导电型基底层的表面部分中的第一导电型源极层; 在由所述第二导电型基底层夹持的区域中形成的沟槽，其深度从所述高电阻外延层的表面延伸到所述半导体衬底; 形成在沟槽的侧壁上的第一导电类型的jfet层; 形成在沟槽中的绝缘层; 形成在第二导电型基底层的表面部分中的第一导电类型的LDD层，以便围绕沟槽的顶面连接到第一导电型jfet层; 控制电极，其形成在所述半导体衬底上，以被分成多个部分，并形成在形成在所述LDD层的一部分表面上的栅极绝缘膜上，所述第一导电型源的端部 并且在由LDD层和第一导电型源极层夹在第二导电型基底层的表面的区域上， 以及与所述第一导电型源极层和所述第二导电型基极欧姆接触以便夹持所述控制电极的第二主电极。

公开(公告)号：US20080035992A1

公开(公告)日：2008-02-14

申请号：US11836383

申请日：2007-08-09

申请人： Yusuke KAWAGUCHI ,  Yoshihiro Yamaguchi ,  Syotaro Ono ,  Akio Nakagawa ,  Miwako Akiyama ,  Kazuya Nakayama ,  Masakazu Yamaguchi

发明人： Yusuke KAWAGUCHI ,  Yoshihiro Yamaguchi ,  Syotaro Ono ,  Akio Nakagawa ,  Miwako Akiyama ,  Kazuya Nakayama ,  Masakazu Yamaguchi

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/2815 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7828

摘要： This semiconductor device comprises a drift layer of a first conductivity type formed on a drain layer of a first conductivity type, and a drain electrode electrically connected to the drain layer. A semiconductor base layer of a second conductivity type is formed in a surface of the drift layer, and a source region of a first conductivity type is further formed in the semiconductor base layer.A source electrode is electrically connected to the source region and a semiconductor base layer. Plural gate electrodes are formed through a gate insulation film so that a semiconductor base layer may be sandwiched by the gate electrodes. The width of the semiconductor base layer sandwiched by the gate electrodes is 0.3 micrometers or less.

摘要翻译： 该半导体器件包括形成在第一导电类型的漏极层上的第一导电类型的漂移层和电连接到漏极层的漏电极。 在漂移层的表面上形成第二导电类型的半导体基底层，并且在半导体基底层中进一步形成第一导电类型的源极区。 源电极电连接到源区和半导体基层。 多个栅电极通过栅极绝缘膜形成，使得半导体基底层可以被栅电极夹持。 被栅电极夹持的半导体基底层的宽度为0.3微米以下。

公开(公告)号：US20070273089A1

公开(公告)日：2007-11-29

申请号：US11805294

申请日：2007-05-23

申请人： Yoshihiro Yamaguchi

发明人： Yoshihiro Yamaguchi

IPC分类号： B65H31/26

CPC分类号： B65H31/36 ,  B65H2404/512 ,  B65H2404/722 ,  B65H2404/733 ,  B65H2801/27

摘要： An aligning unit is provided with a tray having a placing surface on which sheet-like transfer materials discharged with printing applied thereto are held stacked, a first restricting member movable back and forth along an advancing direction of the transfer material being discharged onto the tray while facing the front end of the transfer material with respect to the advancing direction, and a second restricting member for defining the rear end position of the transfer material with respect to the advancing direction. The transfer materials stacked on the tray are aligned by the first restricting member being moved back and forth along the advancing direction. The first restricting member includes a contact surface extending substantially vertically above the placing surface of the tray, and an inclined surface extending from the contact surface toward the placing surface and inclined downward along a direction opposite to the advancing direction.

摘要翻译： 对准单元设置有托盘，托盘具有放置表面的托盘，其上印刷有印刷的片状转印材料被保持在其上，第一限制构件沿着转印材料的前进方向前后移动到托盘上， 面向相对于前进方向的转印材料的前端，以及用于限定转印材料相对于前进方向的后端位置的第二限制构件。 堆叠在托盘上的转印材料通过沿着前进方向前后移动的第一限制构件对齐。 第一限制构件包括在托盘的放置表面上基本垂直地延伸的接触表面和从接触表面朝着放置表面延伸并且沿着与前进方向相反的方向向下倾斜的倾斜表面。

公开(公告)号：US20070216773A1

公开(公告)日：2007-09-20

申请号：US11700736

申请日：2007-01-31

申请人： Tamaki Kojima ,  Yoshihiro Yamaguchi ,  Mikio Sakemoto ,  Katsuhiro Takematsu

发明人： Tamaki Kojima ,  Yoshihiro Yamaguchi ,  Mikio Sakemoto ,  Katsuhiro Takematsu

IPC分类号： H04N5/225

CPC分类号： G06F17/30256 ,  G06F17/30017 ,  G06F17/30247 ,  G06F17/3028 ,  G06K9/00268 ,  G06K9/00288 ,  G06K9/46 ,  G06K9/4647 ,  G06K9/4652 ,  G06K9/481 ,  G06K9/6212 ,  G06T7/70 ,  G06T2207/10004 ,  G06T2207/10024 ,  G06T2207/30201 ,  G06T2207/30242 ,  H04N7/183

摘要： An image processing system may include an imaging device for capturing an image and an image processing apparatus for processing the image. The imaging device may include an imaging unit for capturing the image, a first recording unit for recording information relating to the image, the information being associated with the image, and a first transmission control unit for controlling transmission of the image to the image processing apparatus. The image processing apparatus may include a reception control unit for controlling reception of the image transmitted from the imaging device, a feature extracting unit for extracting a feature of the received image, a second recording unit for recording the feature, extracted from the image, the feature being associated with the image, and a second transmission control unit for controlling transmission of the feature to the imaging device.

摘要翻译： 图像处理系统可以包括用于捕获图像的成像装置和用于处理图像的图像处理装置。 成像装置可以包括用于捕获图像的成像单元，用于记录与图像有关的信息的第一记录单元，与图像相关联的信息，以及用于控制图像传送到图像处理装置的第一传输控制单元 。 图像处理装置可以包括用于控制从成像装置发送的图像的接收的接收控制单元，用于提取接收图像的特征的特征提取单元，用于记录从图像提取的特征的第二记录单元， 特征与图像相关联，以及第二传输控制单元，用于控制特征到成像装置的传输。

公开(公告)号：US20070194375A1

公开(公告)日：2007-08-23

申请号：US11674337

申请日：2007-02-13

申请人： Yusuke Kawaguchi ,  Yoshihiro Yamaguchi ,  Syotaro Ono ,  Miwako Akiyama

发明人： Yusuke Kawaguchi ,  Yoshihiro Yamaguchi ,  Syotaro Ono ,  Miwako Akiyama

IPC分类号： H01L29/94

CPC分类号： H01L29/7811 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/7813

摘要： This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer, and a base layer of a second conductivity type formed on the surface of the epitaxial layer. Column layers of a second conductivity type are repeatedly formed in the epitaxial layer under the base layer at a certain interval. Trenches are formed so as to penetrate the base layer to reach the epitaxial layer; and gate electrodes are formed in the trenches via a gate insulation film. A termination layer of a second conductivity type is formed on the epitaxial layer at an end region at the perimeter of the base layer. The termination layer is formed to have a junction depth larger than that of the base layer.

摘要翻译： 该半导体器件包括形成在第一半导体层表面上的第一导电类型的第一半导体层，第一导电类型的外延层和形成在外延层的表面上的第二导电类型的基极层。 第二导电类型的列层以一定间隔在基底层下的外延层中重复形成。 形成沟槽以穿透基底层以到达外延层; 并且栅电极经由栅极绝缘膜形成在沟槽中。 在基底层的周边的端部区域，在外延层上形成第二导电类型的端接层。 端接层形成为具有大于基底层的结深度的结深度。

公开(公告)号：US07230297B2

公开(公告)日：2007-06-12

申请号：US11127224

申请日：2005-05-12

申请人： Syotaro Ono ,  Akio Nakagawa ,  Yusuke Kawaguchi ,  Yoshihiro Yamaguchi

发明人： Syotaro Ono ,  Akio Nakagawa ,  Yusuke Kawaguchi ,  Yoshihiro Yamaguchi

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/1095

摘要： Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate electrode via the gate insulating film at a lower portion than the upper portion; an n-type epitaxial layer locating to face the gate electrode via the gate insulating film at a further lower portion than the lower portion; a metal layer formed departing from the trench in parallel with a depth direction of the trench, penetrating the n-type diffusion layer and the p-type base layer, to reach the n-type epitaxial layer; and a p-type layer with higher impurity concentration than the p-type base layer, locating to be in contact with the p-type base layer and the metal layer.

摘要翻译： 公开了一种沟槽MOSFET，其包括：具有栅极电极和栅极绝缘膜的沟槽栅极结构; 形成为在沟槽的上部经由栅极绝缘膜与栅电极对置的n型扩散层; p型基底层，其在比上部更低的一部分处经由栅极绝缘膜形成为面对栅电极; n型外延层，其定位成在比下部更下方的一部分经由栅极绝缘膜面对栅电极; 与沟槽的深度方向平行地形成的穿过n型扩散层和p型基底层的金属层，以到达n型外延层; 以及比p型基底层高的杂质浓度的p型层，与p型基底层和金属层接触。

公开(公告)号：US20070112922A1

公开(公告)日：2007-05-17

申请号：US11448000

申请日：2006-06-07

申请人： Masatomo Kurata ,  Makoto Murata ,  Brian Clarkson ,  Yoshihiro Yamaguchi ,  Junko Fukuda

发明人： Masatomo Kurata ,  Makoto Murata ,  Brian Clarkson ,  Yoshihiro Yamaguchi ,  Junko Fukuda

IPC分类号： G06F15/16

CPC分类号： H04M3/42374 ,  H04M1/72544 ,  H04M1/72563 ,  H04M1/72566 ,  H04M1/72569 ,  H04M3/42093 ,  H04M3/42365 ,  H04M2203/2072 ,  H04M2242/14 ,  H04M2250/10 ,  H04M2250/12

摘要： An information processing device connected via a network to another information processing device that recognizes action of a user on a basis of an output of a sensor incorporated in the other information processing device and transmits action information indicating the recognized action of the user includes: a table DB configured to manage correspondence relation between each action recognizable in the other information processing device and communication tools; and a communication means selection processing unit configured to select a communication tool corresponding to the action of the user of the other information processing device, the action of the user being indicated by the action information, as a tool used for communication with the user of the other information processing device on a basis of the correspondence relation managed by the table DB, and execute an application that manages the selected communication tool.

摘要翻译： 一种经由网络连接到另一个信息处理装置的信息处理装置，其基于结合在其他信息处理装置中的传感器的输出识别用户的动作，并且发送指示用户的识别动作的动作信息包括：表 DB被配置为管理在其他信息处理设备中可识别的每个动作与通信工具之间的对应关系; 以及通信装置选择处理单元，被配置为选择与其他信息处理装置的用户的动作相对应的通信工具，由动作信息指示的用户的动作作为用于与用户的通信的工具 基于由表DB管理的对应关系的其他信息处理装置，并执行管理所选择的通信工具的应用程序。

公开(公告)号：US07103483B2

公开(公告)日：2006-09-05

申请号：US11016470

申请日：2004-12-17

申请人： Yoshihiro Yamaguchi ,  Toshiyuki Arima

发明人： Yoshihiro Yamaguchi ,  Toshiyuki Arima

IPC分类号： G06F19/00 ,  G01N11/00

CPC分类号： G06F17/5018 ,  G06F2217/16

摘要： Fluid analyzing apparatus includes: an advection step density analyzing unit; an advection step internal energy analyzing unit; and an advection step pressure analyzing unit. The apparatus further includes: an advection step velocity analyzing unit; a nonadvection step small perturbation analyzing unit; and a nonadvection step velocity analyzing unit. The apparatus further includes: a nonadvection step density analyzing unit; a nonadvection step internal energy analyzing unit; and an iterative calculation control unit which iterates calculation in a predetermined order.

摘要翻译： 流体分析装置包括：平流阶梯密度分析单元; 对流步骤内部能量分析单元; 和对流级压力分析单元。 该装置还包括：对流步速分析单元; 非对流步骤小扰动分析单元; 和非对流步速分析单元。 该装置还包括：非流动步长密度分析单元; 非对流步骤内部能量分析单元; 以及以预定顺序迭代计算的迭代计算控制单元。