摘要:
Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.
摘要:
A substrate processing apparatus equipped to employ an energy directed at a process side of a substrate to enhance and control material removal is provided.
摘要:
The present invention relates to a method of determining physical, chemical and/or biological state variables, particularly substance concentrations, temperature, pH and/or physical fields, and/or the change in these state variables in an examination area of an examination object by determining the change in the spatial distribution of magnetic particles in this examination area as a function of the effect of influencing variables on at least a partarea and/or in the conditions in at least a part-area of the examination area, by means of the following steps: a) introducing magnetic particles into at least part of the examination area in a first state in which in the examination area or in parts thereof at least some of the magnetic particles that are to be examined are agglomerated and/or coupled to one another in pairs or more, or introducing magnetic particles into at least part of the examination area in a second state in which the particles are deagglomerated and/or decoupled and can be agglomerated and/or coupled, b) generating a magnetic field with a spatial profile of the magnetic field strength such that there is produced in the examination area a first part-area having a low magnetic field strength and a second part-area having a higher magnetic field strength, c) changing the, in particularrelative, spatial position of the two part-areas in the examination area or changing the magnetic field strength in the first part-area so that the magnetization of the particles is locally changed, d) detecting signals that depend on the magnetization in the examination area that is influenced by this change, and e) evaluating the signals so as to obtain information about the change in the spatial distribution of the magnetic particles and/or about physical, chemical and/or biological state variables or the change therein in the examination area. The invention further relates to magnetic particle compositions, in particular functionalised magnetic particle compositions and their use in a method according to the invention. The invention further also relates to an apparatus for the measurement of state variables in the examination area.
摘要:
The present invention presents a novel application of a wavelet-based multiscale method in a nanomachining process chemical mechanical planarization (CMP) of wafer fabrication. The invention involves identification of delamination defects of low-k dielectric layers by analyzing the nonstationary acoustic emission (AE) signal collected during copper damascene (Cu-low k) CMP processes. An offline strategy and a moving window-based strategy for online implementation of the wavelet monitoring approach are developed.
摘要:
A measuring apparatus includes a heating unit for applying heat to a first point within a workpiece or on a surface of a workpiece and propagating the heat to a second point within the workpiece or on the surface of the workpiece. The measuring apparatus further includes a measuring unit for measuring a displacement of the surface of the workpiece at the second point to which the heat has been propagated, and an analyzing unit for analyzing a structure of the workpiece based on the displacement measured by the measuring unit in consideration of a distance between the first point and the second point.
摘要:
Chemical-mechanical planarization (CMP) apparatus and methods for detecting polishing pad properties using ultrasonic imaging is presented. An ultrasonic probe assembly transmits ultrasonic signals onto the surface of a polishing pad during a CMP process. Reflected ultrasonic signals are collected and analyzed to monitor polishing pad properties in real-time. This allows CMP process adjustments to be made during the CMP process.
摘要:
The present invention is directed to a method for preparing a polymer for chemical mechanical polishing of a semiconductor substrate. The method comprises providing a thermoplastic foam substrate and exposing the substrate to an initial plasma reactant to produce a modified surface thereon. The method also includes exposing the modified surface to a secondary plasma reactant to create a grafted surface on the modified surface. An electrode temperature is maintained between about 20° C. and about 100° C. during the exposures of the substrate and the modified surface.
摘要:
Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.
摘要:
A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.
摘要:
The present invention provides a system and method for measuring the surface properties of polishing pads using noncontact ultrasonic reflectance. An ultrasonic probe is located over the polishing surface and configured to both transmit an ultrasonic signal to the polishing surface and receive a modified ultrasonic signal from the polishing surface without contacting the polishing surface. A subsystem coupled to the ultrasonic probe is configured to determine a surface property of the polishing pad from the modified signal.