利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

360 条记录 (耗时 0.021 秒)

    Process for Unitary Graphene Layer or Graphene Single Crystal
    71.
    发明申请
    Process for Unitary Graphene Layer or Graphene Single Crystal 有权
    单一石墨烯层或石墨烯单晶的工艺

    公开(公告)号：US20170073834A1

    公开(公告)日：2017-03-16

    申请号：US15354706

    申请日：2016-11-17

    申请人： Aruna Zhamu ,  Wei Xiong ,  Bor Z. Jang

    发明人： Aruna Zhamu ,  Wei Xiong ,  Bor Z. Jang

    IPC分类号： C30B1/02 ,  C30B29/02

    CPC分类号： C30B1/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/184 ,  C01B32/19 ,  C01B32/192 ,  C01B32/22 ,  C01B32/225 ,  C01B32/23 ,  C01P2006/10 ,  C01P2006/32 ,  C01P2006/40 ,  C01P2006/80 ,  C30B5/00 ,  C30B29/02 ,  C30B29/68 ,  Y10S977/734 ,  Y10S977/842 ,  Y10T428/30

    摘要： A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

    摘要翻译： 单层石墨烯层或石墨烯单晶，其含有紧密堆积和化学结合的平行石墨烯平面，其石墨烯平面间距为0.335至0.40nm，氧含量为0.01重量％至10重量％，该单一石墨烯层或石墨烯单晶 通过在高于100℃的温度下热处理石墨烯氧化物凝胶获得，其中两个石墨烯平面之间的平均错位取向角小于10度，更典型地小于5度。 石墨烯氧化物凝胶中的分子在干燥和热处理后被化学相互连接并整合成不含离散石墨薄片或石墨烯薄片的单一石墨烯实体。 该石墨烯整体结构具有卓越的导热性，导电性，机械强度，表面平滑度，表面硬度和耐刮擦性，可与任何相当厚度范围的薄膜材料匹配。

    Process for producing highly oriented graphene films
    72.
    发明授权
    Process for producing highly oriented graphene films 有权
    生产高取向石墨烯薄膜的方法

    公开(公告)号：US09580325B2

    公开(公告)日：2017-02-28

    申请号：US13999282

    申请日：2014-02-06

    申请人： Aruna Zhamu ,  Bor Z Jang ,  Yanbo Wang ,  Lucy Fu

    发明人： Aruna Zhamu ,  Bor Z Jang ,  Yanbo Wang ,  Lucy Fu

    IPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B31/04 ,  B32B37/24 ,  B32B38/00 ,  B29K105/00 ,  B29L7/00

    CPC分类号： C01B32/19 ,  B29K2105/0061 ,  B29L2007/008 ,  B32B37/24 ,  B32B38/0036 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/043 ,  C01B32/184 ,  C01B32/192 ,  C01B32/194 ,  C01B2204/04 ,  C01B2204/22 ,  C01B2204/24 ,  C01B2204/26 ,  C09K5/14

    摘要： A process for producing a highly oriented graphene film (HOGF), comprising: (a) preparing a graphene oxide (GO) dispersion having GO sheets dispersed in a fluid medium; (b) dispensing and depositing the dispersion onto a surface of a supporting substrate to form a layer of GO, wherein the dispensing and depositing procedure includes subjecting the dispersion to an orientation-inducing stress; (c) removing the fluid medium to form a dried layer of GO having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) slicing the dried layer of GO into multiple pieces of dried GO and stacking at least two pieces of dried GO to form a mass of multiple pieces of GO; and (f) heat treating the mass under an optional first compressive stress to produce the HOGF at a first heat treatment temperature higher than 100° C. to an extent that an inter-plane spacing d002 is decreased to a value less than 0.4 nm.

    摘要翻译： 一种制备高取向石墨烯膜（HOGF）的方法，包括：（a）制备分散在流体介质中的GO片的氧化石墨烯（GO）分散体; （b）将分散体分配并沉积到支撑基底的表面上以形成一层GO，其中分配和沉积步骤包括使分散体经受定向诱导应力; （c）去除流体介质以形成具有0.4nm至1.2nm的平面间距d002的GO干燥层; （d）将干燥的GO层切成多个干燥的GO，并堆叠至少两片干燥的GO以形成多个GO块; 和（f）在任选的第一压缩应力下热处理所述物质，以在高于100℃的第一热处理温度下产生HOGF，使得平面间距d002减小到小于0.4nm的值。

    A METHOD OF PRODUCING A GRAPHENE LAYER
    73.
    发明申请
    A METHOD OF PRODUCING A GRAPHENE LAYER 审中-公开
    生产石墨层的方法

    公开(公告)号：US20170018712A1

    公开(公告)日：2017-01-19

    申请号：US15301645

    申请日：2015-03-26

    申请人： PHILIPS LIGHTING HOLDING B.V.

    发明人： Adrianus Johannes Maria Giesbers ,  Abraham Rudolf Balkenende ,  Leendert Van Der Tempel

    IPC分类号： H01L51/00 ,  H01L51/56 ,  C01B31/04 ,  H01L51/52

    CPC分类号： H01L51/0021 ,  C01B32/184 ,  C01B32/192 ,  C01B2204/04 ,  C01P2006/40 ,  H01L51/0023 ,  H01L51/0027 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/56 ,  H01L2251/558

    摘要： The present invention relates to a method of preparing an at least partially transparent and conductive layer (22) comprising graphene, the method comprising the steps of: (a) applying a dispersion comprising graphene oxide onto a substrate to form a layer comprising graphene oxide on the substrate, and (b) heating at least part of the layer obtained in step (a) by laser irradiation (34) at a laser output power of at least 0.036 W, thereby chemically reducing at least a part of the graphene oxide to graphene (33) and physically reducing the thickness of the layer by ablation. An advantage of the present invention is that it provides a simplified method of preparing a layer comprising graphene. The layer thus prepared has desirable transparency and conductivity.

    摘要翻译： 本发明涉及一种制备包含石墨烯的至少部分透明和导电层（22）的方法，所述方法包括以下步骤：（a）将包含氧化石墨烯的分散体施加到基底上以形成包含氧化石墨烯的层 所述基板，和（b）通过激光照射（34）以至少0.036W的激光输出功率加热在步骤（a）中获得的所述层的至少一部分，从而将至少一部分所述石墨烯氧化物还原成石墨烯 （33），并且通过消融物理地减小层的厚度。 本发明的优点在于其提供了制备包含石墨烯的层的简化方法。 如此制备的层具有期望的透明度和导电性。

    SIMPLE PRODUCTION METHOD FOR GRAPH ENE BY MICROORGANISMS
    74.
    发明申请
    SIMPLE PRODUCTION METHOD FOR GRAPH ENE BY MICROORGANISMS 审中-公开
    微生物的简单生产方法

    公开(公告)号：US20160376155A2

    公开(公告)日：2016-12-29

    申请号：US14722015

    申请日：2015-05-26

    申请人： Mariam Al Ali Alamaadeed ,  Noorunnisa Khanam Patan

    发明人： Mariam Al Ali Alamaadeed ,  Noorunnisa Khanam Patan

    IPC分类号： C01B31/04 ,  C12P3/00

    CPC分类号： C12P3/00 ,  C01B32/192

    摘要： Systems and methods are provided for producing graphene from graphene oxide in an environmentally friendly, cost effective and simple process, which uses microorganisms as a reducing agent to achieve the desired result. The systems and methods avoid the use of toxic or environmentally harmful reducing agents commonly used as reducing agents in the chemical reduction of GO to obtain graphene.

    摘要翻译： 提供了以环保，成本有效和简单的方法从石墨烯氧化物生产石墨烯的系统和方法，其使用微生物作为还原剂以获得期望的结果。 这些系统和方法避免了在化学还原GO中通常用作还原剂的有毒或有害环境的还原剂，以获得石墨烯。

    Highly conducting graphitic films from graphene liquid crystals
    77.
    发明申请
    Highly conducting graphitic films from graphene liquid crystals 有权
    来自石墨烯液晶的高导电石墨膜

    公开(公告)号：US20160304351A1

    公开(公告)日：2016-10-20

    申请号：US15192241

    申请日：2016-06-24

    申请人： Aruna Zhamu ,  Bor Z. Jang

    发明人： Aruna Zhamu ,  Bor Z. Jang

    IPC分类号： C01B31/04 ,  H01B1/04 ,  H01B1/24 ,  C09K5/14

    CPC分类号： C01B32/182 ,  C01B32/184 ,  C01B32/192 ,  C01B32/198 ,  C01B32/23 ,  C01B2204/22 ,  C01P2006/10 ,  C01P2006/32 ,  C01P2006/40 ,  C09K5/14 ,  H01B1/04 ,  H01B1/24

    摘要： A process for producing a highly oriented graphitic film, consisting of (a) preparing a dispersion having graphene oxide (GO) or chemically functionalized graphene (CFG) dispersed in a liquid to form a liquid crystal phase (but not in a GO gel state); (b) depositing the dispersion onto a supporting substrate to form a layer of GO or CFG under an orientation-inducing stress; (c) removing the liquid to form a dried GO or CFG layer having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) thermally reducing the dried layer at a first temperature higher than 100° C. to produce a porous layer of reduced GO or CFG; (e) further heat-treating the porous layer at a second temperature to produce a porous graphitic film having an inter-plane spacing d002 less than 0.4 nm; and (f) compressing the porous graphitic film to produce the highly oriented graphitic film.

    摘要翻译： 一种高取向石墨膜的制造方法，由（a）制备分散在液体中的石墨烯氧化物（GO）或化学官能化石墨烯（CFG）的分散体形成液晶相（但不在GO凝胶状态） ; （b）将分散体沉积在支撑基底上以在取向诱导应力下形成一层GO或CFG; （c）去除液体以形成具有0.4nm至1.2nm的平面间距d002的干GO或CFG层; （d）在高于100℃的第一温度下热干燥干燥层以产生减少的GO或CFG的多孔层; （e）在第二温度下进一步热处理多孔层以产生具有小于0.4nm的平面间距d002的多孔石墨膜; 和（f）压缩多孔石墨膜以产生高取向的石墨膜。

    Method for preparing graphene
    78.
    发明授权
    Method for preparing graphene 有权
    制备石墨烯的方法

    公开(公告)号：US09428395B2

    公开(公告)日：2016-08-30

    申请号：US14364970

    申请日：2012-12-11

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

    发明人： Lionel Dubois ,  Serge Gambarelli ,  Ashok Nanjundan

    IPC分类号： C01B31/04 ,  B82Y30/00 ,  B82Y40/00 ,  C25B1/00

    CPC分类号： C01B31/0492 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/192 ,  C01B32/196 ,  C25B1/00

    摘要： The present invention relates to a method for preparing graphene substantially free of contamination by metallic, magnetic, organic and inorganic impurities, and also to the use of the resulting graphene for the production of transparent electrodes, batteries, electron-acceptor or electron-donor materials, in particular in photovoltaic systems, photovoltaic panels, transistor channels, in particular in electronics, nonlinear emitters or absorbers of infrared photons, current-conducting electrodes, anti-static coatings, chemical detectors, vias and interconnections in electronics, current-conducting cables, and solar cells.

    摘要翻译： 本发明涉及一种制备基本上不受金属，磁性，有机和无机杂质污染的石墨烯的方法，还涉及使用所得的石墨烯制备透明电极，电池，电子受体或电子给体材料 特别是在光伏系统，光伏面板，晶体管通道中，特别是在电子学领域，电子学中的非线性发射器或红外光子的吸收体，导电电极，防静电涂层，化学检测器，通孔和互连，电流传导电缆， 和太阳能电池。