公开(公告)号：US20090286385A1

公开(公告)日：2009-11-19

申请号：US12123049

申请日：2008-05-19

Applicant: Balgovind SHARMA ,  Ying H. TSANG

Inventor： Balgovind SHARMA ,  Ying H. TSANG

IPC: H01L21/3205 ,  B44C1/22

CPC classification number: H01L21/31133 ,  G03F7/422 ,  G03F7/425

Abstract: Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.

Abstract translation: 提供了从含金属的材料中去除光致抗蚀剂的方法。 根据本发明的示例性实施方案，该方法包括向光致抗蚀剂施加基本上不含pH的溶剂，其pH值不低于约9或不含pH，并且随后将其施加到含金属的材料上 pH值不低于约9的流体。

公开(公告)号：US20090224438A1

公开(公告)日：2009-09-10

申请号：US11922747

申请日：2006-06-29

Applicant: Jurgen Stampfl ,  Heinrich Gruber ,  Helga Lichtenegger ,  Robert Liska ,  Robert Infuhr

Inventor： Jurgen Stampfl ,  Heinrich Gruber ,  Helga Lichtenegger ,  Robert Liska ,  Robert Infuhr

IPC: B29C35/08

CPC classification number: C08F2/48 ,  B29C33/3842 ,  B29C64/106 ,  B33Y10/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0017 ,  G03F7/0037 ,  G03F7/027 ,  G03F7/0755 ,  G03F7/42 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426

Abstract: The invention relates to a method for producing three-dimensional objects, comprising producing a three-dimensional structure by sequential selective curing of layers of a composition curable with visible and/or ultraviolet light into a solid polymeric material by sequential exposure of the individual layers to UV and/or visible light, whereafter a three-dimensional object is produced by use of the three-dimensional structure thus formed, followed by removing the three-dimensional structure from or of the three-dimensional object, characterized in that removing the three-dimensional structure is accomplished by chemically cleaving the polymeric material as well as simultaneously or subsequently dissolving the material in a solvent or mixed solvent and/or melting the material.

Abstract translation: 本发明涉及一种用于生产三维物体的方法，包括通过将可见光和/或紫外光固化的组合物的层顺序选择性固化成固体聚合物材料，通过将各层顺次曝光而制备三维结构 UV和/或可见光，然后通过使用如此形成的三维结构产生三维物体，随后从三维物体中去除三维结构，其特征在于， 通过化学裂解聚合材料以及同时或随后将材料溶解在溶剂或混合溶剂中和/或熔化材料来实现三维结构。

公开(公告)号：US07569336B2

公开(公告)日：2009-08-04

申请号：US11533930

申请日：2006-09-21

Applicant: Jun-Ing Kil ,  Sok-Ho Yi ,  Kyong-Hee Kim ,  Hee Seo ,  Bon-Wang Koo ,  Min-Young Kim

Inventor： Jun-Ing Kil ,  Sok-Ho Yi ,  Kyong-Hee Kim ,  Hee Seo ,  Bon-Wang Koo ,  Min-Young Kim

IPC: G03F7/00 ,  G03F7/42

CPC classification number: G03F7/425

Abstract: In a method of forming a pattern using a composition for removing photoresist, a layer is formed on a substrate, and then a photoresist pattern is formed on the layer. A portion of the layer exposed by the photoresist pattern is etched using the photoresist pattern as an etching mask to form the pattern on the substrate. Then, the photoresist pattern is removed using the composition including hydroxylamine, an alkanolamine-based compound, a morpholine-based compound, a polar solvent, a corrosion preventing agent, and water. The composition may effectively remove a photoresist pattern and etched residues without damaging the substrate and/or the pattern including metal, nitride, oxide and/or metal nitride.

Abstract translation: 在使用除去光致抗蚀剂的组合物形成图案的方法中，在基板上形成层，然后在该层上形成光致抗蚀剂图案。 使用光致抗蚀剂图案作为蚀刻掩模蚀刻由光致抗蚀剂图案曝光的层的一部分，以在基板上形成图案。 然后，使用包含羟胺，链烷醇胺类化合物，吗啉类化合物，极性溶剂，防腐剂和水的组合物除去光刻胶图案。 组合物可以有效地去除光致抗蚀剂图案和蚀刻残留物而不损坏衬底和/或包括金属，氮化物，氧化物和/或金属氮化物的图案。

公开(公告)号：US07566596B2

公开(公告)日：2009-07-28

申请号：US11875028

申请日：2007-10-19

Applicant: Hong-Sik Park ,  Shi-Yul Kim ,  Jong-Hyun Choung ,  Won-Suk Shin

Inventor： Hong-Sik Park ,  Shi-Yul Kim ,  Jong-Hyun Choung ,  Won-Suk Shin

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L27/1288 ,  G02F1/134336 ,  G02F1/1362 ,  G02F1/1368 ,  G03F7/425 ,  H01L27/1214 ,  H01L27/124

Abstract: A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.

Abstract translation: 制造薄膜晶体管基板的方法包括形成晶体管薄层图案，形成保护层，形成光致抗蚀剂膜，形成彼此分离的像素电极和导电层，剥离光致抗蚀剂图案以除去导电 使用剥离组合物并溶解导电层。 制造薄膜晶体管基板的方法能够提高薄膜晶体管基板的制造工艺的效率。 此外，汽提组合物被再循环。

公开(公告)号：US20090156453A1

公开(公告)日：2009-06-18

申请号：US11719690

申请日：2005-02-01

Applicant: Seiji Inaoka

Inventor： Seiji Inaoka

IPC: G03F7/42

CPC classification number: G03F7/425 ,  G03F7/426

Abstract: Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone.

Abstract translation: 本发明的光致抗蚀剂剥离剂和清洁组合物由非水性清洁组合物提供，其对铜以及铝基本上不具有腐蚀性，并且包含至少一种极性有机溶剂，至少一种羟基化有机胺和至少一种腐蚀 具有从聚合物主链悬挂的多个羟基或氨基官能团的抑制剂聚合物。

公开(公告)号：US07547669B2

公开(公告)日：2009-06-16

申请号：US11119844

申请日：2005-05-02

Applicant: Wai Mun Lee

Inventor： Wai Mun Lee

IPC: C11D7/50

CPC classification number: G03F7/423 ,  C23F1/34 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/31133 ,  H05K3/26

Abstract: A new remover chemistry based on a choline compound, such as choline hydroxide, is provided in order to address problems related to removal of residues, modified photoresists, photoresists, and polymers such as organic anti-reflective coatings and gap-fill and sacrificial polymers from surfaces involved in dual damascene structures without damaging the dielectrics and substrates involved therein. An etch stop inorganic layer at the bottom of a dual damascene structure may or may not be used to cover the underlying interconnect of copper. If not used, a process step of removing that protective layer can be avoided through a timed etch of the via in trench-first dual damascene processes.

Abstract translation: 提供了基于胆碱化合物（例如氢氧化胆碱）的新的去除剂化学品，以便解决与去除残留物，改性光致抗蚀剂，光致抗蚀剂和聚合物相关的问题，例如有机抗反射涂层和间隙填充和牺牲聚合物， 涉及双镶嵌结构的表面，而不损害其中涉及的电介质和基底。 在双镶嵌结构底部的蚀刻停止无机层可以或不用于覆盖铜的下面的互连。 如果不使用，则可以通过沟槽第一双镶嵌工艺中的通孔的定时蚀刻来避免去除该保护层的工艺步骤。

公开(公告)号：US20090149025A1

公开(公告)日：2009-06-11

申请号：US11988943

申请日：2006-06-05

Applicant: Sadaharu Miyamoto ,  Yasushi Sasaki

Inventor： Sadaharu Miyamoto ,  Yasushi Sasaki

IPC: H01L21/306 ,  G03F7/42 ,  C11D3/36

CPC classification number: C09D9/00 ,  C11D7/08 ,  C11D7/3209 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02071 ,  Y10S134/902

Abstract: A remover composition containing 1,3-propanediamine (a), 1-hydroxyethylidene-1,1-diphosphonic acid (b) and water, wherein the remover composition contains the component (a) in an amount of from 0.2 to 30% by weight, the component (b) in an amount of from 0.05 to 10% by weight, and the water in an amount of from 60 to 99.75% by weight, and wherein the composition has a pH at 20° C. of from 9 to 13; and a remover composition containing an organic amine (A), an organic phosphonic acid (B), a linear sugar alcohol (C) and water, wherein the remover composition contains the component (A) in an amount of from 0.2 to 30% by weight, the component (B) in an amount of from 0.05 to 10% by weight, the component (C) in an amount of from 0.1 to 10% by weight, and the water in an amount of from 50 to 99.65% by weight, and wherein the composition has a pH at 20° C. of from 9 to 13.

Abstract translation: 一种含有1,3-丙二胺（a），1-羟基亚乙基-1,1-二膦酸（b）和水的去除剂组合物，其中除去剂组合物含有组分（a）的量为0.2-30重量％ ，组分（b）的量为0.05-10重量％，水的量为60至99.75重量％，其中组合物的pH在20℃为9至13 ; 和含有有机胺（A），有机膦酸（B），线性糖醇（C）和水的去除剂组合物，其中除去剂组合物含有组分（A）的量为0.2〜30％ 组分（B）的量为0.05-10重量％，组分（C）的量为0.1-10重量％，水的量为50-99.65重量％ ，并且其中所述组合物的pH在20℃为9至13。

公开(公告)号：US07528098B2

公开(公告)日：2009-05-05

申请号：US10995239

申请日：2004-11-24

Applicant: Wai Mun Lee ,  Katy Ip ,  Xuan-Dung Dinh ,  David John Maloney

Inventor： Wai Mun Lee ,  Katy Ip ,  Xuan-Dung Dinh ,  David John Maloney

IPC: H01L21/302

CPC classification number: H01L21/02071 ,  C11D3/30 ,  C11D7/3218 ,  C11D11/0047 ,  G03F7/425

Abstract: A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.

Abstract translation: 用于除去聚合物材料和蚀刻残渣的残留物除去剂包括2-（2-氨基乙基氨基） - 乙醇和任选的另外的两个碳原子键链烷醇胺化合物，没食子酸或邻苯二酚，水，极性有机溶剂和羟胺。 用于从衬底（例如包括钛冶金的集成电路半导体晶片）去除光致抗蚀剂或其它残留物的方法包括以下步骤：将衬底与上述组合物接触一段时间并在足以将光致抗蚀剂或其它残余物除去的温度 底物。 在组合物和方法中使用2-（2-氨基乙基氨基） - 乙醇提供优异的残余物去除而不侵蚀基材上的钛或其他冶金。 组合物优选具有大于约130℃的闪点

公开(公告)号：US20090111726A1

公开(公告)日：2009-04-30

申请号：US12239923

申请日：2008-09-29

Applicant: X. Cass Shang

Inventor： X. Cass Shang

IPC: G03F7/42

CPC classification number: G03F7/425 ,  G03F7/426

Abstract: A composition for removing undesired matter from a substrate, the composition comprising hydroxylamine or a hydroxylamine derivative, a quaternary ammonium compound and at least one polar organic solvent. The composition is capable of removing photoresist from wafer level packaging and solder bumping applications.

Abstract translation: 一种用于从基底去除不想要的物质的组合物，所述组合物包含羟胺或羟胺衍生物，季铵化合物和至少一种极性有机溶剂。 该组合物能够从晶片级封装和焊料凸起应用中去除光致抗蚀剂。

公开(公告)号：US20090099051A1

公开(公告)日：2009-04-16

申请号：US12173352

申请日：2008-07-15

Applicant: Tetsuo Aoyama ,  Toshitaka Hiraga ,  Tomoko Suzuki

Inventor： Tetsuo Aoyama ,  Toshitaka Hiraga ,  Tomoko Suzuki

IPC: C11D7/32

CPC classification number: H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/263 ,  C11D7/28 ,  C11D7/3218 ,  C11D7/3263 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76814

Abstract: The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.

Abstract translation: 本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。 根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。