Abstract:
An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
Abstract:
An electron emission device includes a polycrystalline film of lanthanum boride, and a size of a crystallite which composes the polycrystalline film is equal to or more than 2.5 nm and equal to or less than 100 nm, preferably the film thickness of the polycrystalline film is equal to or less than 100 nm.
Abstract:
An electron emitter retaining a stable electron emission property with minimized fluctuation over a long period of time is provided. Also, a long-life image display apparatus that exhibits little fluctuation over a long period of time, by using electron emitters that retain a stable electron emission property with minimized fluctuation over long period of time is provided.
Abstract:
An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the gird, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, and the electron emitter includes a first end, a second end and a gap. At least one electron emission end is located in the gap.
Abstract:
An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the gird, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, the electron emitter includes a first end, a second end and a gap; wherein the first end is electrically connected to one of the plurality of the first electrodes and the second end is electrically connected to one of the plurality of the third electrodes; two electron emission ends are located in the gap, and each electron emission end includes a plurality of electron emission tips.
Abstract:
An electron-emitting device, comprising: a pair of device electrodes formed on an insulating substrate; and a conductive film formed to connect the device electrodes and having an electron-emitting portion, wherein the conductive film has a thickness of 3 nm to 50 nm and is made of precious metal and oxide of base metal, a percentage of the base metal among metals contained in the conductive film is 30 mol % or more, and the conductive film has a concentration gradient of the oxide of the base metal in a thickness direction.
Abstract:
A method of making an electron-emitting device including the steps of (A) preparing a member comprising first and second substances composed of carbon, wherein the substances have respective reaction rates different from each other for a gas, and (B) heating the member in an atmosphere containing the gas.
Abstract:
The invention provides an electron beam apparatus having: a rear plate having a plurality of electron-emitting devices each provided with a device electrode, and a plurality of wirings connected to the device electrodes; and a face plate being provided with an anode electrode, and being arranged in opposition to the rear plate so as to be irradiated with an electron emitted from the electron-emitting device, wherein the device electrode is electrically connected to the wiring through an additional electrode, and the additional electrode is formed from an electroconductive material of which phase transition from a solid phase directly into a vapor phase is caused at a temperature not lower than a melting point of the device electrode within an evacuated atmosphere.
Abstract:
To implement an electrode structure which brings about extinction of arc quickly in a reliable manner without maintaining discharge current, and provide an electron source and image display apparatus equipped with the electrode structure.Device electrodes 2 and 3 are partially narrowed in areas where they are connected to scan wiring 6 and signal wiring 4, and an insulating layer 5 which insulates the scan wiring 6 and signal wiring 4 are extended to cover the narrow portions of the device electrodes 2 and 3.
Abstract:
In regard to an electroconductive pattern including a high resistivity region partially, by forming a pattern with a photosensitive resin, making the pattern absorb liquid containing a metal component, and baking this, an electroconductive film of metal oxide is formed, this electroconductive film is further covered by a gas shielding layer, and portions which are not shielded are reduced selectively to be made low resistance metal film regions. Since the material which constitutes the electroconductive pattern is hardly removed, a load concerning material reuse is mitigated and material cost is reduced.