公开(公告)号：US6055460A

公开(公告)日：2000-04-25

申请号：US907310

申请日：1997-08-06

Applicant: Marlin L. Shopbell

Inventor： Marlin L. Shopbell

IPC: H01J37/304 ,  H01J37/317 ,  H01L21/265 ,  H01L21/66 ,  G06F19/00 ,  G06F15/00

CPC classification number: H01L22/20 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/31703

Abstract: The present invention proposes a method and apparatus for compensating for the spatial variation across the surface of a wafer in certain design parameters of semiconductor devices. The spatial variation in the design parameters is due to the spatial variation in some of the processes involved in the manufacturing of the devices upon the semiconductor wafer. Using metrology tools, the physical, chemical, and electrical parameters of the devices across the surface of the wafer are first measured and recorded. These device parameters include the certain design parameters that must remain within certain design limits or that are to be optimized. Examples of these design parameters for a transistor are the threshold voltage, the switching speed, and the current consumption. The spatial variation in the design parameters may be compensated by altering the doping profile across the wafer with some of the implantation steps. For example, heavier doping may be used for the source/drain regions of transistors close to the center of the wafer compared to doping for the source/drain regions which are close to the perimeter of the wafers. A computer model of the devices is used to determine the appropriate ion implantation profile for one or more implantation steps that would compensate for the spatial variation of the design parameters. Ion implantation is chosen for the compensation because the implantation dosage and energy can be accurately controlled, and because the ion implanters can be easily reprogrammed to deliver different amounts of dosages and energies in each region of the wafer. Small changes in the ion implantation doping profile are made for the next set of wafers and the device parameters along with the design parameters are remeasured.

Abstract translation: 本发明提出了一种在半导体器件的某些设计参数中补偿晶片表面上的空间变化的方法和装置。 设计参数的空间变化是由于在半导体晶片上制造器件所涉及的一些工艺中的空间变化。 使用计量工具，首先测量和记录跨晶片表面的器件的物理，化学和电学参数。 这些设备参数包括必须保持在某些设计限制内或要优化的某些设计参数。 晶体管的这些设计参数的示例是阈值电压，开关速度和电流消耗。 可以通过用一些注入步骤改变跨晶片的掺杂分布来补偿设计参数中的空间变化。 例如，与接近晶片周边的源极/漏极区域的掺杂相比，较重的掺杂可用于接近晶片中心的晶体管的源极/漏极区域。 使用这些装置的计算机模型来确定用于一个或多个植入步骤的适当的离子注入轮廓，其将补偿设计参数的空间变化。 选择离子注入用于补偿，因为可以精确地控制注入剂量和能量，并且因为离子注入器可以容易地重新编程以在晶片的每个区域中递送不同量的剂量和能量。 对下一组晶圆进行离子注入掺杂分布的小变化，并重新设计器件参数以及设计参数。

公开(公告)号：US06020592A

公开(公告)日：2000-02-01

申请号：US128370

申请日：1998-08-03

Applicant: Reuel B. Liebert ,  Bjorn O. Pedersen ,  Matthew Goeckner

Inventor： Reuel B. Liebert ,  Bjorn O. Pedersen ,  Matthew Goeckner

IPC: C23C14/48 ,  H01J37/32 ,  H01L21/265 ,  H01J37/244

CPC classification number: H01J37/32412 ,  H01J37/32935 ,  H01J2237/24405 ,  H01J2237/31703

Abstract: Plasma doping apparatus includes a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece such as a semiconductor wafer, a source of ionizable gas coupled to the chamber, an anode spaced from the platen and a pulse source for applying high voltage pulses between the platen and the anode. The high voltage pulses produce a plasma having a plasma sheath in the vicinity of the workpiece. The high voltage pulses accelerate positive ions across the plasma sheath toward the platen for implantation into the workpiece. The plasma doping apparatus includes at least one Faraday cup positioned adjacent to the platen for collecting a sample of the positive ions accelerated across the plasma sheath. The sample is representative of the dose of positive ions implanted into the workpiece.

Abstract translation: 等离子体掺杂装置包括等离子体掺杂室，安装在等离子体掺杂室中的压板，用于支撑诸如半导体晶片的工件，耦合到室的可电离气体源，与压板间隔开的阳极和用于施加高压的脉冲源 压板和阳极之间的电压脉冲。 高压脉冲在工件附近产生具有等离子体护套的等离子体。 高电压脉冲将等离子体护套的正离子加速朝向压板，以便植入工件。 等离子体掺杂装置包括至少一个位于压板附近的法拉第杯，用于收集跨越等离子体鞘加速的正离子的样品。 样品代表植入工件中的正离子剂量。

公开(公告)号：US5998798A

公开(公告)日：1999-12-07

申请号：US95863

申请日：1998-06-11

Applicant: Alfred Mike Halling ,  Wade Krull

Inventor： Alfred Mike Halling ,  Wade Krull

IPC: C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/31703

Abstract: An ion implanter includes an dosage control apparatus for measuring and controlling ion beam dosage applied to workpieces disposed in an implantation station of the implanter. The dosage control apparatus permits the direct calculation of a calibration function. The calibration function includes at least one calibration factor, called a K value. The K value is used by dosage control circuitry of the dosage control apparatus to convert from a measured ionized beam current, I.sup.f, as measured by a Faraday cage disposed in the implantation station, to a true or effective beam current, I.sup.T. The K value is determined from a relationship between the measured ionized beam current, I.sup.+, and a pressure, P, in the implantation station. The relationship between the effective beam current, I.sup.T, the measured ionized beam current, I.sup.f, and the implantation station pressure, P, will normally take the form of an exponential relationship, e.g., I.sup.T =I.sup.f [e.sup.-(KP) ]. The K value is determined by measuring the pressure and corresponding ionized beam currents I.sup.f+, for several pressures and applying a curve fitting algorithm to determine the K value that best fits the data points. The effective beam current, I.sup.T, accounts for neutral atoms in the ion beam which are effective species in the implantation of the workpieces but that are not measured by the Faraday cage. The K value depends upon particular gas encountered along the ion beam beam line. Thus, different K values are advantageously calculated during calibration for different residual gas components expected during a production run. During a production run, the proper K value or values are selected and used by the dosage control electronics to determine the effective beam current of the ion beam and, thereby, to accurately control ion beam dosage utilizing the effective beam current. During a calibration run, a restriction plate having a narrow aperture is positioned in the beam line between an ion beam source and the implantation station.

公开(公告)号：US5338940A

公开(公告)日：1994-08-16

申请号：US917208

申请日：1992-07-21

Applicant: Kunihiko Takeyama

Inventor： Kunihiko Takeyama

IPC: H01J37/317 ,  H01J37/30 ,  G21K5/08

CPC classification number: H01J37/3171 ,  H01J2237/2001 ,  H01J2237/20257 ,  H01J2237/31703

Abstract: Wafer disk holds wafers in position by centrifugal force and its rotating shaft is supported by a bearing capable of magnetic levitation that has a thrust bearing and radial bearings. An annular groove providing a heat radiating zone is formed under the wafer receiving faces of the wafer disk. A cooling plate cooled to a temperature not exceeding the temperature of liquid nitrogen is inserted into the groove in a contactless manner so that the wafer disk is cooled by heat radiation. In the absence of any area of physical contact in the mechanisms for axially supporting and cooling the wafer disk, ions can be implanted in low dose into wafers on the fast rotating disk while improving the quality of wafers after implantation. Further, no triboelectricity will develop, thereby contributing to an improvement in the precision of ion beam current measurement.

Abstract translation: 晶圆盘通过离心力将晶片保持在适当位置，其旋转轴由具有推力轴承和径向轴承的磁悬浮轴承支撑。 在晶片盘的晶片接收面的下方形成设置散热区的环状槽。 将冷却至不超过液氮温度的冷却板以非接触的方式插入槽中，从而通过热辐射冷却晶片盘。 在用于轴向支撑和冷却晶片盘的机构中没有任何物理接触区域的情况下，可以将离子以低剂量注入快速旋转盘上的晶片中，同时改善植入后晶片的质量。 此外，不会产生摩擦电，从而有助于提高离子束电流测量的精度。

公开(公告)号：US20180350557A1

公开(公告)日：2018-12-06

申请号：US15992862

申请日：2018-05-30

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Hiroshi Matsushita

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/304 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0473 ,  H01J2237/30472 ,  H01J2237/31703

Abstract: An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.

公开(公告)号：US20180068828A1

公开(公告)日：2018-03-08

申请号：US15258723

申请日：2016-09-07

Applicant: Axcelis Technologies, Inc.

Inventor： Alfred Mike Halling

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/304 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/244 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/31703

Abstract: A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes a plurality of ion beam optical elements configured to selectively steer and/or shape the ion beam as it is transported toward a workpiece, wherein the ion beam is sampled at a high frequency to provide a plurality of ion beam current samples, which are then analyzed to detect fluctuations and/or nonuniformities or unpredicted variations amongst the plurality of ion beam current samples. Beam current samples are compared against predetermined threshold levels, and/or predicted nonuniformity levels to generate a control signal when a detected nonuniformity in the plurality of ion beam current density samples exceeds a predetermined threshold. A control system can be configured to generate a control signal for interlocking the ion beam transport in the ion implantation system or for varying an input to at least one beam optical element to control variations in beam current.

公开(公告)号：US09773712B2

公开(公告)日：2017-09-26

申请号：US14956944

申请日：2015-12-02

Applicant: Toshiba Memory Corporation

Inventor： Takayuki Ito ,  Yasunori Oshima ,  Toshihiko Iinuma

IPC: H01J37/317 ,  H01L21/66 ,  H01L21/265 ,  H01J37/244

CPC classification number: H01L22/26 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/31703 ,  H01L21/26513 ,  H01L22/14

Abstract: An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.

公开(公告)号：US20170062285A1

公开(公告)日：2017-03-02

申请号：US14956944

申请日：2015-12-02

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： TAKAYUKI ITO ,  YASUNORI OSHIMA ,  TOSHIHIKO IINUMA

IPC: H01L21/66 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01L22/26 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/31703 ,  H01L21/26513 ,  H01L22/14

Abstract: An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.

Abstract translation: 离子注入装置包括注入部件，测量部件和控制器。 离子注入部将离子注入位于设置在半导体基板上的凹部的底部的注入区域中。 所述测量部件在离子注入到所述注入区域中时，基于从所述注入部分注入的离子，在配置所述半导体衬底的第一位置处测量与所述凹部的纵横比对应的离子的注入量，或者 第二名接近第一名。 当植入量的累积量根据植入区域的目标堆积量达到预定量时，控制器控制注入部分停止将离子注入测量部分。

公开(公告)号：US09449791B2

公开(公告)日：2016-09-20

申请号：US14736928

申请日：2015-06-11

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Mitsukuni Tsukihara ,  Noriyasu Ido ,  Noriyuki Suetsugu

IPC: H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.

Abstract translation: 本发明提供一种束照射装置，包括：束扫描器，被配置为使得带电粒子束沿扫描方向往复扫描; 测量装置，其能够测量入射到测量对象的区域中的带电粒子的角分量; 以及使用由测量装置测量的结果计算带电粒子束的有效照射发射率的数据处理器。 测量装置测量带电粒子束的角度分布的时间依赖值。 数据处理器将角分布的时间相关值中包含的时间信息变换为位置信息，从而计算有效的照射发射率。 有效辐射发射率表示虚拟束束的发射率，虚拟束束是通过对入射到测量目标区域的带电粒子束的部分进行求和而形成的。

公开(公告)号：US20160225577A1

公开(公告)日：2016-08-04

申请号：US15097996

申请日：2016-04-13

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Xiao BAI ,  Zhimin WAN ,  Donald Wayne BERRIAN

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1475 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/152 ,  H01J2237/1526 ,  H01J2237/303 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract translation: 用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。 诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。 辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。 波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。