公开(公告)号：US10578974B2

公开(公告)日：2020-03-03

申请号：US16447001

申请日：2019-06-20

Applicant: Carl Zeiss SMT GmbH

Inventor： Ralf Moser ,  Florian Herold ,  Arno Schmittner ,  Holger Kierey ,  Wolfgang Merkel ,  Georgo Metalidis

IPC: G03F7/20 ,  G21K1/06 ,  G02B5/08

Abstract: The disclosure relates to an optical element, in particular for a microlithographic projection exposure apparatus. The optical element has an optical effective surface. The optical element includes a substrate, a layer system that is present on the substrate, and a protective cover extending over an edge region of the optical element that is adjacent to the optical effective surface. During operation of the optical element, the protective coating reduces an ingress of hydrogen radicals into the layer system in comparison with an analogous design without the protective cover, wherein a gap is formed between the protective cover and the layer system.

公开(公告)号：US20200068695A1

公开(公告)日：2020-02-27

申请号：US16665335

申请日：2019-10-28

Applicant: Gigaphoton Inc.

Inventor： Hitoshi NAGANO ,  Yasunori WADA ,  Tatsuya YANAGIDA ,  Osamu WAKABAYASHI

IPC: H05G2/00 ,  H01S3/16 ,  H01S3/13 ,  H01L21/027 ,  G21K1/06 ,  H01S3/00 ,  H01S3/23 ,  H01S3/107 ,  H01S3/10 ,  G03F7/20

Abstract: A system for generating extreme ultraviolet light, in which a target material inside a chamber is irradiated with a laser beam to be turned into plasma, includes a first laser apparatus configured to output a first laser beam, a second laser apparatus configured to output a pedestal and a second laser beam, and a controller connected to the first and second laser apparatuses and configured to cause the first laser beam to be outputted first, the pedestal to be outputted after the first laser beam, and the second laser beam having higher energy than the pedestal to be outputted after the pedestal.

公开(公告)号：US20200057181A1

公开(公告)日：2020-02-20

申请号：US16538727

申请日：2019-08-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi YANG ,  Sheng-Ta LIN ,  Jen-Yang CHUNG ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G02B5/08 ,  G03F1/24 ,  G21K1/06

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.

公开(公告)号：US20200045800A1

公开(公告)日：2020-02-06

申请号：US16149643

申请日：2018-10-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia HSU ,  Kuan-Hung CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G21K1/06 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.

公开(公告)号：US20200027623A1

公开(公告)日：2020-01-23

申请号：US16511166

申请日：2019-07-15

Applicant: Carl Zeiss SMT GmbH

Inventor： Dmitry Kuznetsov ,  Andrey E. Yakshin ,  Hartmut Enkisch ,  Viacheslav Medvedev ,  Frederik Bijkerk

IPC: G21K1/06 ,  G03F7/20

Abstract: For a working wavelength in the range from 1 nm to 12 nm, a reflective optical element has, on a substrate, a multilayer system that includes at least two alternating materials having a different real part of the refractive index at the working wavelength. The multilayer system includes a first alternating material from the group formed from thorium, uranium, barium, nitrides thereof, carbides thereof, borides thereof, lanthanum carbide, lanthanum nitride, lanthanum boride, and a second alternating material from the group formed from carbon, boron, boron carbide, or lanthanum as first alternating material and carbon or boron as second alternating material. It has, on the side of the multilayer system remote from the substrate, a protective layer system including a nitride, an oxide and/or a platinum metal.

公开(公告)号：US10541062B2

公开(公告)日：2020-01-21

申请号：US15622338

申请日：2017-06-14

Applicant: SIEMENS HEALTHCARE GMBH

Inventor： Alexander Kraemer ,  Josef Zeidler

IPC: A47B81/00 ,  A61B6/02 ,  G21K1/02 ,  A61B6/00 ,  G21K1/06

Abstract: An apparatus for movably suspending an x-ray grid. The apparatus has a carrier module, in or on which the x-ray grid is arranged, and a linkage. The linkage is configured to rotate the carrier module about an axis which is vertical to the x-ray grid and/or to translate the carrier module in the plane of the x-ray grid. An x-ray arrangement has an x-ray emitter, an x-ray detector and one or more apparatus for suspending the x-ray grid between the emitter and detector. The apparatus provides for play-free kinematics which is more cost-effective than the use of known precision drives.

公开(公告)号：US20200020458A1

公开(公告)日：2020-01-16

申请号：US16031767

申请日：2018-07-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik R. Hosler ,  Sheldon J. Meyers

IPC: G21K1/04 ,  H05G2/00 ,  G21K1/06 ,  G03F7/20

Abstract: A method includes identifying a contamination region of a collector in a light source, positioning a subset of a plurality of movable light-blocking elements around a periphery of a circular aperture of the light source to compensate for the contamination region, and transmitting light from the light source through the circular aperture.

公开(公告)号：US10512148B2

公开(公告)日：2019-12-17

申请号：US15447013

申请日：2017-03-01

Applicant: GIGAPHOTON INC.

Inventor： Hitoshi Nagano ,  Yasunori Wada ,  Tatsuya Yanagida ,  Osamu Wakabayashi

IPC: H05G2/00 ,  H01S3/107 ,  H01S3/23 ,  H01S3/00 ,  H01S3/13 ,  H01S3/16 ,  G21K1/06 ,  H01L21/027

Abstract: A system for generating extreme ultraviolet light, in which a target material inside a chamber is irradiated with a laser beam to be turned into plasma, includes a first laser apparatus configured to output a first laser beam, a second laser apparatus configured to output a pedestal and a second laser beam, and a controller connected to the first and second laser apparatuses and configured to cause the first laser beam to be outputted first, the pedestal to be outputted after the first laser beam, and the second laser beam having higher energy than the pedestal to be outputted after the pedestal.

公开(公告)号：US20190355488A1

公开(公告)日：2019-11-21

申请号：US16469310

申请日：2017-12-12

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： THOMAS KOEHLER ,  GEREON VOGTMEIER

IPC: G21K1/06

Abstract: The present invention relates to a grating in X-ray imaging. In order to provide a grating with a facilitated stabilization, a grating (10) for X-ray imaging is provided that comprises a grating structure (12) with a first plurality of bar members (14) and a second plurality of gaps (16). A fixation structure (18) is arranged between the bar members to stabilize the grating bar members. The bar members are extending in a length direction (20) and in a height direction (22). The bar members are also spaced from each other by one of the gaps in a direction transverse to the height direction. The gaps are arranged in a gap direction parallel to the length direction. The fixation structure comprises a plurality of bridging web members (24) that are provided between adjacent bar members. Further, the web members are longitudinal web members that are extending in the gap direction and that are provided in an inclined manner in relation to the height direction. The inclination is provided in the gap direction.

公开(公告)号：US10481111B2

公开(公告)日：2019-11-19

申请号：US15789992

申请日：2017-10-21

Applicant: KLA-Tencor Corporation

Inventor： John Hench ,  Antonio Gellineau ,  Nikolay Artemiev ,  Joseph A. Di Regolo

IPC: G01N23/20 ,  G01N23/201 ,  G01N23/083 ,  G21K1/06

Abstract: Methods and systems for calibrating the location of x-ray beam incidence onto a specimen in an x-ray scatterometry metrology system are described herein. The precise location of incidence of the illumination beam on the surface of the wafer is determined based on occlusion of the illumination beam by two or more occlusion elements. The center of the illumination beam is determined based on measured values of transmitted flux and a model of the interaction of the beam with each occlusion element. The position of the axis of rotation orienting a wafer over a range of angles of incidence is adjusted to align with the surface of wafer and intersect the illumination beam at the measurement location. A precise offset value between the normal angle of incidence of the illumination beam relative to the wafer surface and the zero angle of incidence as measured by the specimen positioning system is determined.