Abstract:
A wireless power transmitter for transmitting power in a wireless manner by forming a wireless power signal and a wireless power transfer method thereof are capable of optimizing transmission efficiency for a plurality of wireless power receivers, by deciding an optimal transmission parameter (especially, a frequency corresponding to the wireless power signal or a resonant frequency) for the plurality of wireless power receivers based on control errors received from the plurality of wireless power receivers, respectively, via respective time slots allocated to the plurality of wireless power receivers.
Abstract:
A display device includes: a first insulation substrate having an upper surface and a lower surface; a transparent conductive layer disposed on the upper surface of the first insulation substrate; a gate line disposed on the lower surface of the first insulation substrate; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer; a data line disposed on the semiconductor layer and connected to a source electrode and a drain electrode facing the source electrode; and a pixel electrode electrically connected to the drain electrode, where the gate line, the gate insulating layer, the semiconductor layer and the data line are sequentially disposed on the lower surface of the first insulation substrate.
Abstract:
A system and method for time domain interpolation of signals for channel estimation. A method for computing channel estimates comprises storing symbols in a buffer, using time domain interpolation (TDI) for a first time to compute channel estimates for a set of sub-carriers of a symbol. The channel estimates are computed from the symbol and a first number of required symbols in the buffer. The method also comprises using TDI for a second time to compute channel estimates for the set of sub-carriers of a symbol. The channel estimates are computed from the symbol, a second number of required symbols in the buffer, and a buffered symbol used as a missing required symbol if the missing required symbol is not in the buffer.
Abstract:
The present invention is directed to compositions and methods useful for the amplification of nucleic acid molecules by reverse transcriptase-polymerase chain reaction (RT-PCR). Specifically, the invention provides compositions and methods for the amplification of nucleic acid molecules in a simplified one- or two-step RT-PCR procedure using combinations of reverse transcriptase and thermostable DNA polymerase enzymes in conjunction with sulfur-containing molecules or acetate-containing molecules (or combinations of such sulfur-containing molecules and acetate-containing molecules), and optionally bovine serum albumin. The invention thus facilitates the rapid and efficient amplification of nucleic acid molecules and the detection and quantitation of RNA molecules. The invention also is useful in the rapid production and amplification of cDNAs which may be used for a variety of industrial, medical and forensic purposes.
Abstract:
A scan driver drives a display device having a plurality of gate lines transferring scan signals, and a plurality of source lines transferring data signals. The scan driver includes a shift register and a multiple signal applying unit. The shift register includes a plurality of cascade-connected stages, each stage having an output terminal electrically connected to a respective one of the plurality of gate lines. The multiple signal applying unit applies a sub scan signal and a main scan signal. The sub scan signal and the main scan signal sequentially activate each of the plurality of gate lines. Therefore, the scan lines receive the scan signal twice, so that the liquid crystal capacitors electrically connected to the gate lines receive the data voltage twice. As a result, even though the time for charging the liquid crystal capacitors may be reduced, the liquid crystal capacitors may be fully charged to enhance display quality.
Abstract:
A composition for producing an organic insulator is provided which comprises an organic-inorganic hybrid material (as defined). The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material displays a high dielectric constant and a high degree of crosslinking. Based on these advantages, the composition comprising the organic-inorganic hybrid material can be utilized during the fabrication of various electronic devices by a wet process. A method for producing the organic insulator while utilizing the composition also is provided, as well as the resulting organic insulator, and an organic thin film transistor which incorporates the resulting insulating layer.
Abstract:
Disclosed herein are a printed circuit board and a method for manufacturing the same. The printed circuit board includes: a copper pad surface roughness-treated to have a surface roughness of 0.1 to 1.0 μm pitch period; and an electroless surface treatment plating layer formed on the copper pad. According to the present invention, when the copper pad has a surface roughness of a predetermined pitch period, the electroless surface treatment plating layer formed on the copper pad also has a surface roughness of the predetermined pitch period, thereby having an effect of widening a surface area and improving workability at the time of a wire bonding process for connection with an external device.
Abstract:
The present invention includes a class-E power amplifier, comprising a driver stage (DS) including a first power amplifier with transistors, to which an input signal is inputted; a main stage (MS), including a second power amplifier with transistors, whose input is connected to the output of the DS; and a first LC resonator whose one end is connected to the output of the DS and the other end to the ground as an AC equivalent circuit and a second LC resonator whose one end is connected to the input of the MS and the other end to the ground as an AC equivalent circuit. In accordance with the present invention, as the voltage stress is reduced on the CMOS class-E power amplifier, the application of the high power supply voltage may be allowed and therefore the load impedance may be high while the same efficiency is maintained.
Abstract:
Disclosed are a laser processing apparatus and method that can effectively remove a low-k material formed on a wafer. A laser processing apparatus of the invention is a laser processing apparatus that processes a subject on which a low-k material is formed. The laser processing apparatus includes a laser generating unit that emits a laser beam; and an optical system that splits the laser beam emitted from the laser generating unit into two and irradiates the split laser beams onto the subject In this case, the optical system includes a pair of condensing lenses in which cut surfaces that are cut at a predetermined distance from central axes to be parallel to the central axes contact with each other, and the interval between the two split laser beams is the same as the interval between two edges of the low-k material in a removal subject region. According to the invention, after splitting a laser beam into two laser beams and primarily removing the edges of the low-k material in the removal subject region using the laser beams, the remaining low-k material between the edges is removed. As a result, it is possible to improve processing quality.
Abstract:
A nonvolatile memory device and a method of forming a nonvolatile memory device are provided. The nonvolatile memory device includes an active region of a semiconductor substrate defined by a device isolation layer, a tunnel insulating structure disposed on the active region, and a charge storage structure disposed on the tunnel insulating structure. The nonvolatile memory device also includes a gate interlayer dielectric layer disposed on the charge storage structure, and a control gate electrode disposed on the gate interlayer dielectric layer. The charge storage structure includes an upper charge storage structure and a lower charge storage structure, and the upper charge storage structure has a higher impurity concentration than the lower charge storage structure.