WIRELESS POWER TRANSMITTER AND WIRELESS POWER TRANSFER METHOD THEREOF IN MANY-TO-ONE COMMUNICATION
    821.
    发明申请
    WIRELESS POWER TRANSMITTER AND WIRELESS POWER TRANSFER METHOD THEREOF IN MANY-TO-ONE COMMUNICATION 有权
    无线电力发射机及其在多个通信中的无线电力传输方法

    公开(公告)号:US20130057078A1

    公开(公告)日:2013-03-07

    申请号:US13538263

    申请日:2012-06-29

    Abstract: A wireless power transmitter for transmitting power in a wireless manner by forming a wireless power signal and a wireless power transfer method thereof are capable of optimizing transmission efficiency for a plurality of wireless power receivers, by deciding an optimal transmission parameter (especially, a frequency corresponding to the wireless power signal or a resonant frequency) for the plurality of wireless power receivers based on control errors received from the plurality of wireless power receivers, respectively, via respective time slots allocated to the plurality of wireless power receivers.

    Abstract translation: 通过形成无线功率信号和无线功率传输方法以无线方式发送功率的无线电力发射机能够通过确定最佳传输参数(特别是频率对应的频率)来优化多个无线功率接收机的传输效率 基于从分配给多个无线功率接收机的各个时隙分别基于从多个无线功率接收机接收到的控制误差,对于多个无线功率接收机的无线功率信号或谐振频率。

    DISPLAY DEVICE
    822.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号:US20130038569A1

    公开(公告)日:2013-02-14

    申请号:US13312144

    申请日:2011-12-06

    CPC classification number: G06F3/044 G06F3/0412 G06F2203/04103

    Abstract: A display device includes: a first insulation substrate having an upper surface and a lower surface; a transparent conductive layer disposed on the upper surface of the first insulation substrate; a gate line disposed on the lower surface of the first insulation substrate; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer; a data line disposed on the semiconductor layer and connected to a source electrode and a drain electrode facing the source electrode; and a pixel electrode electrically connected to the drain electrode, where the gate line, the gate insulating layer, the semiconductor layer and the data line are sequentially disposed on the lower surface of the first insulation substrate.

    Abstract translation: 显示装置包括:具有上表面和下表面的第一绝缘基板; 设置在所述第一绝缘基板的上表面上的透明导电层; 设置在所述第一绝缘基板的下表面上的栅极线; 设置在栅极线上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体层; 数据线,设置在所述半导体层上,并连接到面对所述源电极的源电极和漏电极; 以及与所述漏电极电连接的像素电极,其中所述栅极线,所述栅极绝缘层,所述半导体层和所述数据线依次配置在所述第一绝缘基板的下表面上。

    System and method for time domain interpolation of signals for channel estimation
    823.
    发明授权
    System and method for time domain interpolation of signals for channel estimation 有权
    用于信道估计的信号的时域插值的系统和方法

    公开(公告)号:US08374285B2

    公开(公告)日:2013-02-12

    申请号:US12115394

    申请日:2008-05-05

    Abstract: A system and method for time domain interpolation of signals for channel estimation. A method for computing channel estimates comprises storing symbols in a buffer, using time domain interpolation (TDI) for a first time to compute channel estimates for a set of sub-carriers of a symbol. The channel estimates are computed from the symbol and a first number of required symbols in the buffer. The method also comprises using TDI for a second time to compute channel estimates for the set of sub-carriers of a symbol. The channel estimates are computed from the symbol, a second number of required symbols in the buffer, and a buffered symbol used as a missing required symbol if the missing required symbol is not in the buffer.

    Abstract translation: 用于信道估计的信号的时域插值的系统和方法。 一种用于计算信道估计的方法包括:使用时域内插(TDI)首先在缓冲器中存储符号以计算符号的一组子载波的信道估计。 信道估计是根据符号和缓冲器中的第一数目的所需符号来计算的。 该方法还包括使用TDI第二次来计算符号的子载波集合的信道估计。 如果缺少的所需符号不在缓冲区中,则从符号计算信道估计值,缓冲器中必需符号的第二个数量以及用作缺失的所需符号的缓冲符号。

    Compositions and methods for reverse transcriptase-polymerase chain reaction (RT-PCR)

    公开(公告)号:US08372604B2

    公开(公告)日:2013-02-12

    申请号:US12981240

    申请日:2010-12-29

    Abstract: The present invention is directed to compositions and methods useful for the amplification of nucleic acid molecules by reverse transcriptase-polymerase chain reaction (RT-PCR). Specifically, the invention provides compositions and methods for the amplification of nucleic acid molecules in a simplified one- or two-step RT-PCR procedure using combinations of reverse transcriptase and thermostable DNA polymerase enzymes in conjunction with sulfur-containing molecules or acetate-containing molecules (or combinations of such sulfur-containing molecules and acetate-containing molecules), and optionally bovine serum albumin. The invention thus facilitates the rapid and efficient amplification of nucleic acid molecules and the detection and quantitation of RNA molecules. The invention also is useful in the rapid production and amplification of cDNAs which may be used for a variety of industrial, medical and forensic purposes.

    SCAN DRIVER, DISPLAY DEVICE HAVING THE SAME AND METHOD OF DRIVING A DISPLAY DEVICE
    825.
    发明申请
    SCAN DRIVER, DISPLAY DEVICE HAVING THE SAME AND METHOD OF DRIVING A DISPLAY DEVICE 有权
    扫描驱动器,具有该驱动器的显示装置和驱动显示装置的方法

    公开(公告)号:US20130033417A1

    公开(公告)日:2013-02-07

    申请号:US13648505

    申请日:2012-10-10

    CPC classification number: G09G3/3677 G09G3/3614 G09G2310/0248 G11C19/184

    Abstract: A scan driver drives a display device having a plurality of gate lines transferring scan signals, and a plurality of source lines transferring data signals. The scan driver includes a shift register and a multiple signal applying unit. The shift register includes a plurality of cascade-connected stages, each stage having an output terminal electrically connected to a respective one of the plurality of gate lines. The multiple signal applying unit applies a sub scan signal and a main scan signal. The sub scan signal and the main scan signal sequentially activate each of the plurality of gate lines. Therefore, the scan lines receive the scan signal twice, so that the liquid crystal capacitors electrically connected to the gate lines receive the data voltage twice. As a result, even though the time for charging the liquid crystal capacitors may be reduced, the liquid crystal capacitors may be fully charged to enhance display quality.

    Abstract translation: 扫描驱动器驱动具有传送扫描信号的多条栅极线的显示装置和传送数据信号的多条源极线。 扫描驱动器包括移位寄存器和多信号施加单元。 移位寄存器包括多个级联连接的级,每级具有电连接到多条栅极线中的相应一条栅线的输出端。 多信号施加单元施加副扫描信号和主扫描信号。 子扫描信号和主扫描信号顺序地激活多条栅极线中的每一条。 因此,扫描线接收扫描信号两次,使得电连接到栅极线的液晶电容器接收数据电压两次。 结果,即使可以减少液晶电容器的充电时间,液晶电容器也可能被充满电以提高显示质量。

    CLASS E POWER AMPLIFIER
    828.
    发明申请
    CLASS E POWER AMPLIFIER 有权
    E类功率放大器

    公开(公告)号:US20120319782A1

    公开(公告)日:2012-12-20

    申请号:US13516230

    申请日:2010-12-15

    Abstract: The present invention includes a class-E power amplifier, comprising a driver stage (DS) including a first power amplifier with transistors, to which an input signal is inputted; a main stage (MS), including a second power amplifier with transistors, whose input is connected to the output of the DS; and a first LC resonator whose one end is connected to the output of the DS and the other end to the ground as an AC equivalent circuit and a second LC resonator whose one end is connected to the input of the MS and the other end to the ground as an AC equivalent circuit. In accordance with the present invention, as the voltage stress is reduced on the CMOS class-E power amplifier, the application of the high power supply voltage may be allowed and therefore the load impedance may be high while the same efficiency is maintained.

    Abstract translation: 本发明包括一个E类功率放大器,包括一个驱动级(DS),该驱动级包括一个输入信号的晶体管的第一功率放大器; 主级(MS),包括具有晶体管的第二功率放大器,其输入连接到DS的输出; 以及第一LC谐振器,其一端连接到DS的输出端,另一端连接到地面作为AC等效电路,第二LC谐振器的一端连接到MS的输入端,另一端连接到 作为交流等效电路接地。 根据本发明,由于CMOS E类功率放大器的电压应力降低,可以允许施加高电源电压,因此负载阻抗可能高,同时保持相同的效率。

    Laser processing apparatus and method using beam split
    829.
    发明授权
    Laser processing apparatus and method using beam split 有权
    激光加工设备和使用光束分割的方法

    公开(公告)号:US08329560B2

    公开(公告)日:2012-12-11

    申请号:US12670159

    申请日:2008-05-06

    Abstract: Disclosed are a laser processing apparatus and method that can effectively remove a low-k material formed on a wafer. A laser processing apparatus of the invention is a laser processing apparatus that processes a subject on which a low-k material is formed. The laser processing apparatus includes a laser generating unit that emits a laser beam; and an optical system that splits the laser beam emitted from the laser generating unit into two and irradiates the split laser beams onto the subject In this case, the optical system includes a pair of condensing lenses in which cut surfaces that are cut at a predetermined distance from central axes to be parallel to the central axes contact with each other, and the interval between the two split laser beams is the same as the interval between two edges of the low-k material in a removal subject region. According to the invention, after splitting a laser beam into two laser beams and primarily removing the edges of the low-k material in the removal subject region using the laser beams, the remaining low-k material between the edges is removed. As a result, it is possible to improve processing quality.

    Abstract translation: 公开了一种能够有效地去除在晶片上形成的低k材料的激光加工装置和方法。 本发明的激光加工装置是对形成有低k材料的被摄体进行处理的激光加工装置。 激光加工装置包括发射激光束的激光发生单元; 以及将从激光发生单元发射的激光束分成两部分并将分离的激光束照射到被摄体上的光学系统。在这种情况下,光学系统包括一对聚光透镜,其中以预定距离切割的切割表面 从中心轴平行于中心轴彼此接触,并且两个分离激光束之间的间隔与去除对象区域中的低k材料的两个边缘之间的间隔相同。 根据本发明,在将激光束分成两束激光束并且主要使用激光束去除去除对象区域中的低k材料的边缘之后,边缘之间剩余的低k材料被去除。 结果,可以提高加工质量。

    NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE NONVOLATILE MEMORY DEVICE INCLUDING GIVING AN UPPER PORTION OF AN INSULATING LAYER AN ETCHING SELECTIVITY WITH RESPECT TO A LOWER PORTION
    830.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE NONVOLATILE MEMORY DEVICE INCLUDING GIVING AN UPPER PORTION OF AN INSULATING LAYER AN ETCHING SELECTIVITY WITH RESPECT TO A LOWER PORTION 失效
    非易失性存储器件和形成非易失性存储器件的方法,包括提供绝缘层的上部分与较低部分的蚀刻选择性

    公开(公告)号:US20120302053A1

    公开(公告)日:2012-11-29

    申请号:US13571502

    申请日:2012-08-10

    Abstract: A nonvolatile memory device and a method of forming a nonvolatile memory device are provided. The nonvolatile memory device includes an active region of a semiconductor substrate defined by a device isolation layer, a tunnel insulating structure disposed on the active region, and a charge storage structure disposed on the tunnel insulating structure. The nonvolatile memory device also includes a gate interlayer dielectric layer disposed on the charge storage structure, and a control gate electrode disposed on the gate interlayer dielectric layer. The charge storage structure includes an upper charge storage structure and a lower charge storage structure, and the upper charge storage structure has a higher impurity concentration than the lower charge storage structure.

    Abstract translation: 提供了非易失性存储器件和形成非易失性存储器件的方法。 非易失性存储器件包括由器件隔离层限定的半导体衬底的有源区,设置在有源区上的隧道绝缘结构,以及设置在隧道绝缘结构上的电荷存储结构。 非易失性存储器件还包括设置在电荷存储结构上的栅极层间介质层和设置在栅极层间介质层上的控制栅电极。 电荷存储结构包括上电荷存储结构和较低电荷存储结构,并且上电荷存储结构具有比下电荷存储结构更高的杂质浓度。

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