Abstract:
A system for automatically calculating parameters of an MOSFET is disclosed. The parameter calculating system runs in a computer. The parameter calculating system is used for receiving values inputted, and for calculating parameters of the MOSFET according to the input values. The parameter calculating system includes an operation selecting module (110), a value receiving module (120), a judging module (130), a parameter calculating module (140), and a circuit netlist generating module (150). A related method is also disclosed.
Abstract:
A method for selecting a base station is applied to a mobile station. The mobile station sets a preset distance corresponding to a datum base station. The method comprises selecting a first base station to be a serving base station; and obtaining a first C2 parameter of a second base station corresponding to the mobile station, and obtaining a second C2 parameter as a base for the mobile station in selecting the serving base station when a distance between the second base station and the datum base station is determined to be smaller than the preset distance, wherein the second C2 parameter is equal to the first C2 parameter plus a threshold value.
Abstract:
A method for selecting a ferrite bead for a filter to avoid a peak value in a frequency response curve of the filter is provided. The method includes the steps of: building an equivalent model database including parameters of equivalent models of ferrite beads, the parameters including an inductance and a capacitance of a corresponding equivalent model of each ferrite bead; calculating parameters of a desired ferrite bead in the filter based on parameters of the filter, the parameters of the ferrite bead including an inductance, a capacitance, and a resonant frequency; adjusting parameters of the filter until the calculated resonant frequency equals or approaches a desired resonant frequency, and finding an inductance and a capacitance respectively equaling or approaching the calculated inductance and the calculated capacitance in the database; and selecting a ferrite bead with the appropriate inductance and capacitance as found in the database for the filter.
Abstract:
A filter circuit includes a signal source, an inductor, a load, and a compensator. The inductor and the load are connected between two terminals of the signal source in series. The compensator is connected in parallel with the inductor.
Abstract:
A compound represented by the following formula (I): wherein R1 represents hydrogen, aryl which may have a substituent, a saturated or unsaturated 5- to 7-membered heterocyclic group which may have a substituent, etc.; R2 represents hydrogen, aryl which may have a substituent, a saturated or unsaturated 5- to 7-membered heterocyclic group which may have a substituent, etc.; R3 represents hydrogen, etc.; Ar represents a divalent group derived from aromatic hydrocarbon, etc.; X represents a single bond, linear or branched alkylene having from 1 to 3 carbon atoms which may have a substituent, etc.; and G represents halogen, a saturated or unsaturated 5- or 6-membered cyclic hydrocarbon group which may have a substituent, a saturated or unsaturated 5- to 7-membered heterocyclic group which may have a substituent, etc., a salt thereof or a solvate thereof; and an agent for inhibiting aggregation and/or deposition of an amyloid protein or an amyloid-like protein, which comprises the compound, a salt thereof or a solvate thereof.
Abstract translation:由下式(I)表示的化合物:其中R 1表示氢,可具有取代基的芳基,可具有取代基的饱和或不饱和5-至7-元杂环基等 。 R 2表示氢,可具有取代基的芳基,可具有取代基的饱和或不饱和的5至7元杂环基等; R 3表示氢等; Ar表示衍生自芳烃的二价基团等; X表示单键,可具有取代基的具有1〜3个碳原子的直链或支链亚烷基等; G表示卤素,可具有取代基的饱和或不饱和的5或6元环状烃基,可具有取代基的饱和或不饱和5〜7元杂环基等,其盐或 其溶剂合物; 以及用于抑制淀粉样蛋白或淀粉样蛋白样蛋白的聚集和/或沉积的试剂,其包含所述化合物,其盐或其溶剂合物。
Abstract:
A wet etching method for making calibration bump disks for use in providing quality control of production run magnetic hard disks is disclosed. It includes the steps of: (a) coating a layer of bump material on a substrate; (b) coating a photoresist layer on the layer of bump material; (c) exposing the photoresist layer to a light source under a photomask; (d) developing the photoresist layer using a developer solution to form an undeveloped photoresist layer; (e) etching the substrate containing the layer of bump material and the undeveloped photoresist layer to remove portions of the layer of bump material not covered by the undeveloped photoresist layer; and (f) stripping the undeveloped photoresist layer to leave at least a bump on the substrate which was originally covered by the undeveloped photoresist layer. The wet etching method eliminates many of the problems observed from the conventional metal mask method, including the elimination of the convex-shaped bump surface.
Abstract:
The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired.
Abstract:
A timing calibration circuit for a time-interleaved analog-to-digital converter (ADC) is provided. The timing calibration circuit includes a correlation unit, an adaptive filter and a delay cell. The correlation unit generates a first correlation coefficient according to a first zero-crossing possibility distribution between a first digital data and a second digital data, and generates a second correlation coefficient according to a second zero-crossing possibility distribution between the second digital data and a third digital data. The adaptive filter generates a predicted time skew according to a difference between the first correlation coefficient and the second correlation coefficient. The delay cell calibrates a clock signal of the ADC according to the predicted time skew.
Abstract:
A semiconductor wafer structure includes a plurality of dies, a first scribe line extending along a first direction, a second scribe line extending along a second direction and intersecting the first scribe line, wherein the first and the second scribe lines have an intersection region. A test line is formed in the scribe line, wherein the test line crosses the intersection region. Test pads are formed in the test line and only outside a free region defined substantially in the intersection region.
Abstract:
In a method for checking layout of a printed circuit board (PCB) using an electronic device, a power line is selected from a layout diagram of the PCB. The method searches for one or more signal lines which are overlapping with the selected power line from the layout diagram of the PCB. The method further locates attribute data of the searched signal lines and the selected power line in the layout diagram of the PCB, and displays the attribute data of the searched signal lines and the selected power line on a display device of the electronic device.