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103 条记录 (耗时 0.04 秒)

    Laser fuse with efficient heat dissipation
    7.
    发明申请
    Laser fuse with efficient heat dissipation 有权
    激光熔丝具有高效散热

    公开(公告)号：US20070132059A1

    公开(公告)日：2007-06-14

    申请号：US11299999

    申请日：2005-12-12

    申请人： Hao-Yi Tsai ,  Chao-Hsiang Yang ,  Shang-Yun Hou ,  Chia-Lun Tsai ,  Shin-Puu Jeng

    发明人： Hao-Yi Tsai ,  Chao-Hsiang Yang ,  Shang-Yun Hou ,  Chia-Lun Tsai ,  Shin-Puu Jeng

    IPC分类号： H01L29/00

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure having an efficient thermal path and a method for forming the same are provided. The semiconductor structure includes a protection ring over a semiconductor substrate and substantially encloses a laser fuse structure. The laser fuse structure includes a laser fuse and a connection structure connecting the fuse to integrated circuits. The protection ring is thermally coupled to the semiconductor substrate by contacts. The semiconductor structure further includes a metal plate conducting heat generated by a laser beam to the protection ring.

    摘要翻译： 提供了具有有效的热路径的半导体结构及其形成方法。 半导体结构包括半导体衬底上的保护环，并且基本上包围激光熔丝结构。 激光熔丝结构包括激光熔丝和将熔丝连接到集成电路的连接结构。 保护环通过触点热耦合到半导体衬底。 半导体结构还包括将由激光束产生的热量传导到保护环的金属板。

    Seal ring structure with improved cracking protection and reduced problems
    8.
    发明授权
    Seal ring structure with improved cracking protection and reduced problems 有权
    密封环结构具有改进的开裂保护和减少的问题

    公开(公告)号：US08643147B2

    公开(公告)日：2014-02-04

    申请号：US11933931

    申请日：2007-11-01

    申请人： Shin-Puu Jeng ,  Shih-Hsun Hsu ,  Shang-Yun Hou ,  Hao-Yi Tsai ,  Chen-Hua Yu

    发明人： Shin-Puu Jeng ,  Shih-Hsun Hsu ,  Shang-Yun Hou ,  Hao-Yi Tsai ,  Chen-Hua Yu

    IPC分类号： H01L23/544

    CPC分类号： H01L23/562 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit structure includes a lower dielectric layer; an upper dielectric layer over the lower dielectric layer; and a seal ring. The seal ring includes an upper metal line in the upper dielectric layer; a continuous via bar underlying and abutting the upper metal line, wherein the continuous via bar has a width greater than about 70 percent of a width of the upper metal line; a lower metal line in the lower dielectric layer; and a via bar underlying and abutting the lower metal line. The via bar has a width substantially less than a half of a width of the lower metal line.

    摘要翻译： 集成电路结构包括下介电层; 在下介电层上的上电介质层; 和密封环。 密封环包括在上介电层中的上金属线; 连续的通孔条，其下面并邻接上部金属线，其中所述连续通孔条具有大于所述上部金属线宽度的约70％的宽度; 下介电层中的下金属线; 以及位于下金属线下方并邻接的通孔条。 通孔棒具有基本上小于下金属线宽度的一半的宽度。

    Seal ring structure with improved cracking protection
    9.
    发明授权
    Seal ring structure with improved cracking protection 有权
    密封环结构具有改进的开裂保护

    公开(公告)号：US08125052B2

    公开(公告)日：2012-02-28

    申请号：US11842821

    申请日：2007-08-21

    申请人： Shin-Puu Jeng ,  Shih-Hsun Hsu ,  Shang-Yun Hou ,  Hao-Yi Tsai ,  Chen-Hua Yu

    发明人： Shin-Puu Jeng ,  Shih-Hsun Hsu ,  Shang-Yun Hou ,  Hao-Yi Tsai ,  Chen-Hua Yu

    IPC分类号： H01L23/00

    CPC分类号： H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit structure includes a semiconductor chip comprising a plurality of dielectric layers, wherein the plurality of dielectric layers includes a top dielectric layer; and a first seal ring adjacent edges of the semiconductor chip. The integrated circuit structure further includes a first passivation layer over a top dielectric layer; and a trench extending from a top surface of the first passivation layer into the first passivation layer, wherein the trench substantially forms a ring. Each side of the ring is adjacent to a respective edge of the semiconductor chip. At least one of the plurality of vias has a width greater than about 70 percent of a width of a respective overlying metal line in the plurality of metal lines.

    摘要翻译： 集成电路结构包括包括多个电介质层的半导体芯片，其中所述多个电介质层包括顶部电介质层; 以及与所述半导体芯片的边缘相邻的第一密封环。 集成电路结构还包括在顶部介电层上的第一钝化层; 以及从所述第一钝化层的顶表面延伸到所述第一钝化层中的沟槽，其中所述沟槽基本上形成环。 环的每一侧与半导体芯片的相应边缘相邻。 所述多个通孔中的至少一个具有大于所述多个金属线中相应的上覆金属线的宽度的约70％的宽度。