Abstract:
A method and equipment which includes an illustrated-spot illumination-distribution data table for storing an illumination distribution within an illustrated spot and which calculates a coordinate position for a particle or a defect and the diameter of the particle on the basis of detection light intensity data about the particle or defect and the illustrated-spot illumination-distribution data table. Thus, even when the illumination distribution within the illustrated spot based on an actual illumination optical system is not a Gaussian distribution, the calculation of the particle diameter of the detected particle or defect and the calculation of a coordinate position on the surface of an object to be inspected can be attained with an increased accuracy.
Abstract:
A surface inspection apparatus capable of acquiring scattered light intensity distribution information for each scattering azimuth angle, and detecting foreign matters and defects with high sensitivity. A concave mirror for condensation and another concave mirror for image formation are used to cope with a broad cubic angle. Since mirrors for condensation and image formation are used, a support for clamping the periphery of a lens is unnecessary, and an effective aperture area does not decrease. A plurality of azimuth-wise detection optical systems is disposed and reflected light at all azimuths can be detected by burying the entire periphery without calling for specific lens polishing. A light signal unification unit sums digital data from a particular system corresponding to a scattering azimuth designated in advance in the systems for improving an S/N ratio.
Abstract:
It is an object of the present invention to provide an appearance inspection apparatus capable of analyzing a difference in detection characteristics of detection signals obtained by a plurality of detectors, and capable of flexibly meeting various inspection purposes without changing a circuit or software.An appearance inspection apparatus including a sample stage 101 for supporting a sample 100, an illumination light source 103 for irradiating the sample 100 on the sample stage 101 with illumination light 111, a plurality of detectors 120a to 120d which are disposed at different positions from each other with respect to an illumination light spot of the illumination light source 103, and which detect scattered light 112 generated from a surface of the sample 100, a signal synthesizing section 105 which synthesizes detection signals from the plurality of detectors 120a to 120d in accordance with a set condition, an input operating section 109 for setting a synthesizing condition of the detection signal by the signal synthesizing section 105, and an information display section 108 for displaying a synthesizing map 220a structured based on a synthesized signal which is synthesized by the signal synthesizing section 105 in accordance with a condition set by the input operating section 109.
Abstract:
In order to realize a surface inspection apparatus capable of inspecting a contaminant particle and a defect with a uniform sensitivity without depending on a rotation angle in a primary scan direction even in the case where intensity of scattered light, which is generated derived from the contaminant particle and the defect existing on the surface of a semiconductor wafer or adjacent to the surface, has anisotropy which depends on an illumination direction; light from a light source 11 becomes two illumination beams 21 and 22 by a beam splitter 12, the beams being irradiated onto a semiconductor wafer 100 from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots 3 and 4. When the sum of scattered, diffracted, and reflected lights due to the illumination beams 21 and 22 is detected; influence of the anisotropy which a contaminant particle and a defect existing in the wafer 100 itself or thereon have with respect to an illumination direction, can be eliminated. This makes it possible to inspect a contaminant particle, defect, and the like with a uniform sensitivity without depending on a rotation angle in a primary scan direction even in the case where intensity of the scattered light generated derived from the contaminant particle, defect, and the like depends on the illumination direction.
Abstract:
In the conventional methods for enhancing defect detection sensitivity by improving the resolving power, if a microscopic pattern, which is a high spatial-frequency structure as is the case with a microscopic defect, has become the brightest portion, the gray-scale contrast of the microscopic defect will be enhanced. At the same time, however, the gray-scale contrast of the microscopic pattern will also be enhanced simultaneously. Consequently, there has existed a problem that it is impossible to enhance the microscopic-defect detection sensitivity further than that. In the present invention, an aperture stop which is divided into a plurality of small apertures is located on an illumination pupil plane. Then, light-shield/light-transmission for each small aperture is controlled independently of each other. This control allows an inspection-target object to be illuminated at only an incident angle at which the gray-scale contrast of the microscopic defect will be emphasized more sharply.
Abstract:
Based on a plurality of defects' position-coordinates and attribute detected by an inspecting apparatus, defects that are easily detectable by an observing apparatus are selected. With these selected defects employed as the indicator, the observing apparatus detects and observes the defects. Moreover, creating a coordinate transformation formula for representing a correlated relationship in the defects' position-coordinates between both the apparatuses, the observing apparatus transforms the defects' position-coordinates so as to observe the defects.
Abstract:
A non-polarization beam splitter is used for splitting optical paths of an illumination system and an image formation system. MTF characteristics independent of an orientation of a pattern on a sample is obtained by illumination with a circularly-polarized light by combining a polarizer and a λ/4 plate. A partial polarizer is put in the image formation system immediately after the non-polarization beam splitter, and high-order diffraction lights are taken in with the maximum efficiency and the transmission efficiency of the zero-order light is controlled to improve high frequency part of MTF.
Abstract:
The pattern defect inspection apparatus is operable to detect defects by comparing a detection image, which is obtained through scanning by an image sensor those patterns that have the identical shape and are continuously disposed on the object under tested at equal intervals in row and column directions, with a reference image obtained by scanning neighboring identical shape patterns in the row and column directions. This apparatus has a unit for generating an average reference image by statistical computation processing from the images of identical shape patterns lying next to the detection image including at least eight nearest chips on the up-and-down and right-and-left sides and at diagonal positions with the detection image being intermediately situated. The apparatus also includes a unit that detects a defect by comparing the detection image to the average reference image thus generated.
Abstract:
For recording data on and reproducing data from an optical disk of a single spiral land/groove configuration, a header detector detects header regions on the optical disk, a PID error detector judges whether the address information read from the header regions is erroneous, using error detection codes, and detects the number of errors per sector. An error count comparator compares the number of errors per sector with a predetermined value, and a state judging circuit identifies the state of the optical disk device by causing transition to a higher or lower state according to the output of the error count comparator. The recording and reproduction are controlled according to the state thus identified.
Abstract:
A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.