公开(公告)号：US6063674A

公开(公告)日：2000-05-16

申请号：US181119

申请日：1998-10-28

Applicant: Sheng-Hsing Yang ,  Kuan-Yu Fu

Inventor： Sheng-Hsing Yang ,  Kuan-Yu Fu

IPC: H01L21/336

CPC classification number: H01L29/7835 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/66659 ,  H01L29/0847 ,  H01L29/42368

Abstract: A method for forming high voltage devices is provided. A P-type semiconductor substrate is provided. An oxide layer is formed on the P-type semiconductor substrate. A first P-well and a second P-well are formed in the P-type semiconductor substrate. A first N-well is formed in the second p-well and a second N-well is formed in the first P-well. A field oxide layer on the second N-well and a gate oxide layer are formed on the P-type substrate. A polysilicon layer is formed and defined as a gate on the gate oxide layer across a portion of the field oxide layer and aportion of the first N-well. A source region is formed in the first N-well and a drain region is formed in the second N-well. A P.sup.+ -type doped region is formed between the substrate and the source region across a part of the first N-well within the second P-well.

Abstract translation: 提供了形成高压器件的方法。 提供了P型半导体衬底。 在P型半导体基板上形成氧化物层。 在P型半导体衬底中形成第一P阱和第二P阱。 在第二p阱中形成第一N阱，在第一P阱中形成第二N阱。 在P型衬底上形成第二N阱上的场氧化物层和栅氧化层。 形成多晶硅层，并且在栅极氧化物层上形成栅极，跨过场氧化物层的一部分和第一N阱的离子化。 在第一N阱中形成源极区，在第二N阱中形成漏极区。 在第二P阱中的第一N阱的一部分之间，在衬底和源区之间形成P +型掺杂区。

公开(公告)号：US6052269A

公开(公告)日：2000-04-18

申请号：US235023

申请日：1999-01-21

Applicant: Tien-Hao Tang ,  Shiang Huang-Lu ,  Kuan-Yu Fu

Inventor： Tien-Hao Tang ,  Shiang Huang-Lu ,  Kuan-Yu Fu

IPC: H01L23/60 ,  H01T4/08 ,  H02H3/22

CPC classification number: H01L23/60 ,  H01T4/08 ,  H01L2924/0002

Abstract: A protection circuit using point discharge suitable for use in an integrated circuit, protects circuit from damage by electrostatic discharge. The integrated circuit at least comprises an input/output port, a high voltage line, and a low voltage line. The protection circuit has point discharge structures at two ends of the input/output ports, respectively corresponding to the point discharge structures of the high and low voltage lines, and is suitable for use in all semiconductor fabricating processes.

Abstract translation: 一种适用于集成电路的点放电保护电路，可保护电路免受静电放电损坏。 集成电路至少包括输入/​​输出端口，高压线路和低压线路。 保护电路在输入/输出端口的两端具有分别对应于高压线和低压线的点放电结构的点放电结构，并且适用于所有半导体制造工艺。

公开(公告)号：US6033959A

公开(公告)日：2000-03-07

申请号：US59548

申请日：1998-04-13

Applicant: Kuan-Yu Fu

Inventor： Kuan-Yu Fu

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/7834 ,  H01L21/28114 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823487 ,  H01L29/42376 ,  H01L29/66575 ,  H01L29/66621 ,  H01L29/66787

Abstract: A method of fabricating a MOSFET device with a multiple T-shaped gate has the following steps. A substrate with an active region and a non-active region is provided, wherein the active region has a plurality of trenches, and the non-active region has a plurality shallow trench isolation structures. A thin insulating layer and a conducting layer are formed in the trenches. The conducting layer is defined to form a gate. The device is implanted with first ions. Then, the device is further implanted with second ions by using a mask, wherein the mask expose the trenches of the active region, and the opening of the mask is wider than the trench. The MOSFET device has at least the following structures. There is a substrate with an active region and a non-active region, wherein the active region has a plurality of trenches and the non-active region has a plurality of shallow trench isolation structures. There is a multiple T-shaped gate with a first part and a second part, wherein the first part is formed between two trenches on the substrate and the second part is formed in the trenches of the active region. There is a source/drain region with a shallow doped region and a deep doped region. The multiple T-shaped gate increases the channel width of the MOSFET device and decreases the short channel effect of the high integrity ICs.

Abstract translation: 制造具有多个T形栅极的MOSFET器件的方法具有以下步骤。 提供了具有有源区和非有源区的衬底，其中有源区具有多个沟槽，并且非有源区具有多个浅沟槽隔离结构。 在沟槽中形成薄的绝缘层和导电层。 导电层被定义为形成栅极。 器件植入第一个离子。 然后，通过使用掩模将器件进一步注入第二离子，其中掩模暴露有源区的沟槽，并且掩模的开口比沟槽更宽。 MOSFET器件至少具有以下结构。 存在具有有源区和非有源区的衬底，其中有源区具有多个沟槽，而非有源区具有多个浅沟槽隔离结构。 存在具有第一部分和第二部分的多个T形门，其中第一部分形成在衬底上的两个沟槽之间，并且第二部分形成在有源区域的沟槽中。 存在具有浅掺杂区域和深掺杂区域的源极/漏极区域。 多个T形栅极增加了MOSFET器件的沟道宽度，并降低了高完整性IC的短沟道效应。

公开(公告)号：US5959360A

公开(公告)日：1999-09-28

申请号：US135367

申请日：1998-08-17

Applicant: Kuan-Yu Fu

Inventor： Kuan-Yu Fu

IPC: H01L23/522 ,  H01L23/48 ,  H01L21/326 ,  H01L21/44 ,  H01L29/00

CPC classification number: H01L23/5226 ,  H01L23/522 ,  H01L2924/0002 ,  Y10S438/927 ,  Y10S438/957

Abstract: A structure of a conductive line. The structure of a conductive line comprises a substrate with two conductive lines formed thereon. These two conductive lines are isolated by the formation of a dielectric layer. The conductive lines are electrically connected by a contact/via array. The contact/via array further comprises contact/via columns and contact/via rows made up of contacts/vias. Each contact/via column and contact/via row are added with a load resistor, so that the equivalent resistance of each contact/via is identical.

Abstract translation: 导线的结构。 导线的结构包括在其上形成有两条导线的基片。 通过形成电介质层来隔离这两条导线。 导线通过接触/通孔阵列电连接。 接触/通孔阵列还包括接触/通孔列和由接触件/通孔组成的接触/通孔行。 每个触点/通孔列和接触/通孔列都加上一个负载电阻，使得每个触点/通孔的等效电阻相同。

公开(公告)号：US5944119A

公开(公告)日：1999-08-31

申请号：US61117

申请日：1998-04-16

Applicant: Yu-Fu Hsieh

Inventor： Yu-Fu Hsieh

IPC: B24B23/02 ,  B25F5/00 ,  B23B45/00

CPC classification number: B25F5/00 ,  B24B23/026 ,  Y10S173/02

Abstract: An improved grip structure for a pneumatic tool, in which the grip is furnished with a valve seat mounted with a control valve; the central part of the valve seat has an intake passage, of which the outer end is connected with an intake connector, the valve seat and a ring-shaped groove of the bearing-block hole in the dynamic housing are connected and communicated each other by means of an intake passage. Two symmetrical exhaust passages are furnished on both sides of the valve seat, and extended from the outer end of the grip to the ring-shaped groove of the bearing-block hole in the dynamic housing; a pressure air can enter a central intake passage, flowing through the control valve and a side intake passage, and finally flowing into the ring-shaped groove in the dynamic housing so as to drive blades and a rotor to turn; then, the pressure air will be exhausted through the ring-shaped groove of the cylinder sleeve and the two exhaust passages so as to provide a better intake and exhaust passages for the pneumatic tool.

Abstract translation: 一种用于气动工具的改进的抓握结构，其中该手柄配备有安装有控制阀的阀座; 阀座的中心部分具有进气通道，其外端与进气连接器连接，动力壳体中的阀座和轴承座孔的环形槽通过相互连接并彼此连通 进气通道的装置。 两个对称的排气通道设置在阀座的两侧，并且从手柄的外端延伸到动态壳体中的轴承座孔的环形槽; 压力空气可以进入中央进气通道，流经控制阀和侧进气通道，最后流入动态壳体中的环形槽中，以驱动叶片和转子转动; 然后，压力空气将通过气缸套筒的环形槽和两个排气通道排出，以便为气动工具提供更好的进气和排气通道。

公开(公告)号：US09562926B2

公开(公告)日：2017-02-07

申请号：US14708140

申请日：2015-05-08

Applicant: Chiung-Wen Lin ,  Chiung-Cheng Lo ,  Yu-Fu Kang

Inventor： Chiung-Wen Lin ,  Chiung-Cheng Lo ,  Yu-Fu Kang

IPC: G01P15/00 ,  G01P15/18 ,  G01P15/125 ,  G01P15/08

CPC classification number: G01P15/18 ,  G01P15/125 ,  G01P2015/082

Abstract: The invention provides an MEMS device. The MEMS device includes: a substrate, a proof mass, a spring, a spring anchor, a first electrode anchor, and a second electrode anchor, a first fixed electrode and a second fixed electrode. The proof mass is connected to the substrate through the spring and the spring anchor. The proof mass includes a hollow structure inside, and the spring anchor, the first electrode anchor, and the second electrode anchor are located in the hollow structure. The proof mass and the first fixed electrode form a first capacitor, and the proof mass and the second fixed electrode form a second capacitor. There is neither any portion of the proof mass nor any portion of any fixing electrode located between the first electrode anchor, second electrode anchor, and the spring anchor.

Abstract translation: 本发明提供一种MEMS装置。 MEMS器件包括：衬底，校准块，弹簧，弹簧锚，第一电极锚和第二电极锚，第一固定电极和第二固定电极。 检测质量通过弹簧和弹簧锚连接到基板。 检测质量体包括内部的中空结构，弹簧锚固件，第一电极锚固件和第二电极锚固件位于中空结构中。 检测质量和第一固定电极形成第一电容器，并且检测质量块和第二固定电极形成第二电容器。 在第一电极锚固件，第二电极锚固件和弹簧锚固件之间，没有任何部分的证明质量和任何固定电极的任何部分。

公开(公告)号：US20160169927A1

公开(公告)日：2016-06-16

申请号：US14708140

申请日：2015-05-08

Applicant: Chiung-Wen Lin ,  Chiung-Cheng Lo ,  Yu-Fu Kang

Inventor： Chiung-Wen Lin ,  Chiung-Cheng Lo ,  Yu-Fu Kang

IPC: G01P1/00

CPC classification number: G01P15/18 ,  G01P15/125 ,  G01P2015/082

Abstract: The invention provides an MEMS device. The MEMS device includes: a substrate, a proof mass, a spring, a spring anchor, a first electrode anchor, and a second electrode anchor, a first fixed electrode and a second fixed electrode. The proof mass is connected to the substrate through the spring and the spring anchor. The proof mass includes a hollow structure inside, and the spring anchor, the first electrode anchor, and the second electrode anchor are located in the hollow structure. The proof mass and the first fixed electrode form a first capacitor, and the proof mass and the second fixed electrode form a second capacitor. There is neither any portion of the proof mass nor any portion of any fixing electrode located between the first electrode anchor, second electrode anchor, and the spring anchor.

Abstract translation: 本发明提供一种MEMS装置。 MEMS器件包括：衬底，校准块，弹簧，弹簧锚，第一电极锚和第二电极锚，第一固定电极和第二固定电极。 检测质量通过弹簧和弹簧锚连接到基板。 检测质量体包括内部的中空结构，弹簧锚固件，第一电极锚固件和第二电极锚固件位于中空结构中。 检测质量和第一固定电极形成第一电容器，并且检测质量块和第二固定电极形成第二电容器。 在第一电极锚固件，第二电极锚固件和弹簧锚固件之间，没有任何部分的证明质量和任何固定电极的任何部分。

公开(公告)号：US20150259195A1

公开(公告)日：2015-09-17

申请号：US14643531

申请日：2015-03-10

Applicant: Chiung-Cheng Lo ,  Yu-Fu Kang ,  Ning-Yuan Wang ,  Chiung-Wen Lin

Inventor： Chiung-Cheng Lo ,  Yu-Fu Kang ,  Ning-Yuan Wang ,  Chiung-Wen Lin

IPC: B81B7/00 ,  B81C1/00 ,  B81C3/00 ,  B81B7/02

CPC classification number: H01L25/00 ,  B81C1/00238 ,  B81C2203/0792 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: The invention provides a micro-electro-mechanical system (MEMS) module, which includes a MEMS die stacked on an electronic circuit die. The electronic circuit die includes a substrate, the substrate including at least one through-silicon via (TSV) penetrating through the substrate; and at least one electronic circuit. The electronic circuit includes a circuit region, and a signal transmission layer directly connecting the TSV. At least one wire is connected between a middle part of the MEMS die and the TSV. There is no signal communication at the interfacing location where the MEMS die is stacked on and bonded with the electronic circuit die.

Abstract translation: 本发明提供了一种微电子机械系统（MEMS）模块，其包括堆叠在电子电路管芯上的MEMS管芯。 所述电子电路管芯包括衬底，所述衬底包括贯穿所述衬底的至少一个穿硅通孔（TSV）; 和至少一个电子电路。 电子电路包括电路区域和直接连接TSV的信号传输层。 至少一根导线连接在MEMS管芯的中间部分和TSV之间。 在MEMS管芯堆叠在其上并与电子电路管芯接合的接口位置处没有信号通信。

公开(公告)号：US09134327B2

公开(公告)日：2015-09-15

申请号：US13000303

申请日：2008-06-30

Applicant: Nancy Yuk-Yu Ip ,  Zhenguo Wu ,  Jerry Hsueh-Ching Wang ,  Kit Yu Fu ,  Jun Wan

Inventor： Nancy Yuk-Yu Ip ,  Zhenguo Wu ,  Jerry Hsueh-Ching Wang ,  Kit Yu Fu ,  Jun Wan

IPC: C12Q1/42 ,  A61P25/28 ,  G01N33/68

CPC classification number: G01N33/6896 ,  G01N33/6872 ,  G01N2333/9121 ,  G01N2500/04 ,  G01N2500/10 ,  G01N2500/20 ,  Y10T436/143333

Abstract: The invention provides Stat3 and Tyk2 targets that have importance for diagnosis of neurodegenerative diseases such as Alzheimer's disease. Stat3 and Tyk2 are also important as targets for drug development for neurodegenerative diseases.

Abstract translation: 本发明提供对诊断神经变性疾病如阿尔茨海默氏病具有重要意义的Stat3和Tyk2靶标。 Stat3和Tyk2也作为神经退行性疾病药物开发的目标是重要的。

公开(公告)号：US09112265B2

公开(公告)日：2015-08-18

申请号：US13609090

申请日：2012-09-10

Applicant: Tzuh-Suan Wang ,  Yu-Fu Kuo ,  Yuan-Chin Hsu ,  Chih-Yung Shih

Inventor： Tzuh-Suan Wang ,  Yu-Fu Kuo ,  Yuan-Chin Hsu ,  Chih-Yung Shih

IPC: H01P11/00 ,  H01Q1/24 ,  H01Q1/38

CPC classification number: H01Q1/243 ,  H01Q1/38 ,  Y10T29/49016

Abstract: A method for manufacturing an antenna structure is disclosed. Employing steps of mixing with a catalyst and embedding a metal insert can simplify steps for manufacturing the antenna structure. Further, a non-conductive frame produced by the process disclosed herein can exhibit waterproof effect. The catalyst mentioned above is mixed with a plastic and then injected into a mold to form the non-conductive frame. The metal insert mentioned above is disposed in the mold before the step of injecting the plastic. Alternatively, the metal insert is embedded in the non-conductive frame after the step of injecting the plastic.

Abstract translation: 公开了一种用于制造天线结构的方法。 采用与催化剂混合并嵌入金属插入物的步骤可以简化制造天线结构的步骤。 此外，通过本文公开的方法制造的非导电框架可以表现出防水效果。 将上述催化剂与塑料混合，然后注入模具以形成非导电性框架。 上述金属插入件在注射塑料的步骤之前设置在模具中。 或者，在注塑塑料的步骤之后，将金属插入件嵌入非导电框架中。