公开(公告)号：US08758850B2

公开(公告)日：2014-06-24

申请号：US13238972

申请日：2011-09-21

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C15/02

CPC分类号： G11C11/161 ,  H01L43/12

摘要： A spin transfer torque magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

摘要翻译： 公开了具有增强的内部刚度的自由子层结构的自旋转矩磁性随机存取存储器（STTMRAM）元件及其制造方法。 沉积第一自由子层，第一自由子层部分由硼（B）制成，在沉积第一自由子层之后，在第一温度下对STTMRAM元素进行退火，以降低B 在第一自由子层和阻挡层之间的界面，退火使第二自由子层形成在第一自由子层的顶部上并且部分地由B构成，第二自由子层的B的量 层大于第一自由子层中的B的量。 将STTMRAM元件冷却至低于第一温度的第二温度，并将第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分由硼（B）制成，其中 第三子自由层中的B的量小于第二自由子层中的B的量。

公开(公告)号：US08623452B2

公开(公告)日：2014-01-07

申请号：US12965733

申请日：2010-12-10

申请人： Yuchen Zhou

发明人： Yuchen Zhou

IPC分类号： G11C15/02

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A spin toque transfer magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

摘要翻译： 公开了具有增强的内部刚度的自由子层结构的自旋转矩磁性随机存取存储器（STTMRAM）元件及其制造方法。 沉积第一自由子层，第一自由子层部分由硼（B）制成，在沉积第一自由子层之后，在第一温度下对STTMRAM元素进行退火，以降低B 在第一自由子层和阻挡层之间的界面，退火使第二自由子层形成在第一自由子层的顶部上并且部分地由B构成，第二自由子层的B的量 层大于第一自由子层中的B的量。 将STTMRAM元件冷却至低于第一温度的第二温度，并将第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分由硼（B）制成，其中 第三子自由层中的B的量小于第二自由子层中的B的量。

公开(公告)号：US20130301427A1

公开(公告)日：2013-11-14

申请号：US13466657

申请日：2012-05-08

申请人： Chia Alex Tsai ,  Yuchen Zhou ,  Rajagopalan Janakiraman ,  Yibin Yang

发明人： Chia Alex Tsai ,  Yuchen Zhou ,  Rajagopalan Janakiraman ,  Yibin Yang

IPC分类号： H04L12/26

CPC分类号： H04L45/245 ,  H04L45/28 ,  Y02D50/30

摘要： In one embodiment, one or more indicia of stress are monitored. Based on the one or more indicia of stress, it is determined a stress condition exists. In response to the stress condition, one or more link aggregation actors and partners are caused to enter a grace state for a grace period. While the one or more link aggregation actors and partners are in the grace state, link aggregation formation is paced on a plurality of links by delaying formation of one or more new link aggregation groups on the plurality of links until a hold is released. Upon expiration of the grace period, the grace state is exited.

摘要翻译： 在一个实施例中，监视一个或多个应力标记。 基于一个或多个应力标记，确定存在应力条件。 为了应对压力情况，一个或多个链路聚合行为者和伙伴被引入宽限期的宽限期。 当一个或多个链路聚合参与者和伙伴处于宽限期状态时，通过延迟多个链路上的一个或多个新的链路聚合组的形成直到释放保持，在多个链路上进行链路聚合形成。 在宽限期结束时，退出恩典状态。

公开(公告)号：US20130287038A1

公开(公告)日：2013-10-31

申请号：US13458838

申请日：2012-04-27

申请人： Yuchen Zhou ,  Richard Stewart ,  Alex Tsai ,  Yibin Yang

发明人： Yuchen Zhou ,  Richard Stewart ,  Alex Tsai ,  Yibin Yang

IPC分类号： H04L12/56

CPC分类号： H04L69/28 ,  H04L45/02 ,  H04L45/24 ,  H04L45/245 ,  H04L69/14 ,  Y02D50/30

摘要： Synchronization of traffic multiplexing in link aggregation is described. In an embodiment, a first link aggregator and a second link aggregator are associated with a plurality of links. The first link aggregator maintains an identifier for each link indicating at least a state of enabled or disabled. A synchronized clock is established between the first link aggregator and the second link aggregator. A particular link of the plurality of links is transitioned. Wherein, the transitioning is performed by the first link aggregator sending, to the second link aggregator, a first message identifying a particular time to transition the particular link. The first link aggregator receives, from the second link aggregator, a second message indicating that the particular time is acceptable. In response to a determination that the second message indicates that the particular time is acceptable and that the synchronized clock has reached the particular time, transitioning the link.

摘要翻译： 描述了流量复用在链路聚合中的同步。 在一个实施例中，第一链路聚合器和第二链路聚合器与多个链路相关联。 第一链路聚合器维护每个链路的标识符，指示至少一个启用或禁用的状态。 在第一链路聚合器和第二链路聚合器之间建立同步时钟。 多个链接的特定链接被转换。 其中，由第一链路聚合器向第二链路聚合器发送标识转换特定链路的特定时间的第一消息来执行转换。 第一链路聚合器从第二链路聚合器接收指示特定时间是可接受的第二消息。 响应于第二消息指示特定时间是可接受的并且同步时钟已经到达特定时间的确定，转换链接。

公开(公告)号：US08559215B2

公开(公告)日：2013-10-15

申请号：US13360524

申请日：2012-01-27

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

摘要： A magnetic random access memory (MRAM) element is configured to store a state when electric current flows and includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ. Further, the MTJ includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ.

摘要翻译： 磁性随机存取存储器（MRAM）元件被配置为存储电流流动时的状态，并且包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位。 此外，MTJ包括具有与膜平面垂直的方向的磁化的磁性参考层（RL）和具有与膜平面垂直的方向具有磁化的磁性固定层（PL）。 在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行。

公开(公告)号：US08503271B2

公开(公告)日：2013-08-06

申请号：US13551670

申请日：2012-07-18

申请人： Yuchen Zhou ,  Kenichi Takano ,  Xuhui Jin ,  Erhard Schreck ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Xuhui Jin ,  Erhard Schreck ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/6088 ,  G11B2005/0005 ,  G11B2005/0021 ,  Y10T29/49032

摘要： A method of forming a TAMR (Thermal Assisted Magnetic Recording) write head that uses the energy of optical-laser generated edge plasmons in a plasmon antenna to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The method incorporates forming a magnetic core within the plasmon antenna, so the antenna effectively becomes an extension of the magnetic pole and produces a magnetic field whose maximum gradient overlaps the region being heated by the edge plasmons generated in the conducting layer of the antenna surrounding the antenna's magnetic core.

摘要翻译： 一种形成TAMR（热辅助磁记录）写头的方法，其使用等离子体激元中的激光产生的边缘等离子体激元的能量来局部加热磁记录介质并降低其矫顽力和磁各向异性。 该方法包括在等离子体激元天线内形成磁芯，因此天线有效地成为磁极的延伸，并产生磁场，其最大梯度与被天线周围的天线导电层中产生的边缘等离子体激发加热的区域重叠 天线的磁芯。

公开(公告)号：US20130194863A1

公开(公告)日：2013-08-01

申请号：US13546169

申请日：2012-07-11

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  G11C2013/0083 ,  Y10S977/933 ,  Y10S977/935

摘要： Methods using a sequence of externally generated magnetic fields to initialize the magnetization directions of each of the layers in perpendicular MTJ MRAM elements for data and reference bits when the required magnetization directions are anti-parallel are described. The coercivity of the fixed pinned and reference layers can be made unequal so that one of them can be switched by a magnetic field that will reliably leave the other one unswitched. Embodiments of the invention utilize the different effective coercivity fields of the pinned, reference and free layers to selectively switch the magnetization directions using a sequence of magnetic fields of decreasing strength. Optionally the chip or wafer can be heated to reduce the required field magnitude. It is possible that the first magnetic field in the sequence can be applied during an annealing step in the MRAM manufacture process.

公开(公告)号：US20130082787A1

公开(公告)日：2013-04-04

申请号：US13200844

申请日：2011-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

IPC分类号： H03B7/00 ,  C23C14/14 ,  C23C14/35 ,  B05D5/00 ,  B05D3/02

CPC分类号： H03B15/006 ,  C23C14/025 ,  C23C14/165 ,  G11C5/005 ,  G11C11/161 ,  Y10T428/1114

摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

摘要翻译： 具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间​​形成的5至100原子％。 使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。 界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。 界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

公开(公告)号：US08369189B2

公开(公告)日：2013-02-05

申请号：US13066420

申请日：2011-04-14

申请人： Xuhui Jin ,  Yuchen Zhou ,  Kenichi Takano ,  Joe Smyth

发明人： Xuhui Jin ,  Yuchen Zhou ,  Kenichi Takano ,  Joe Smyth

IPC分类号： G11B11/00

CPC分类号： G11B5/84 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/314 ,  G11B2005/0021

摘要： A TAMR (Thermal Assisted Magnetic Recording) writer has a narrow pole tip with a trailing edge magnetic shield. The narrow pole tipped write head uses the energy of laser generated edge plasmons, formed in a plasmon generating layer, to locally heat a PMR magnetic recording medium below its Curie temperature, Tc. When combined with the effects of the narrow tip, this local heating to a temperature below Tc is sufficient to create good transitions and narrow track widths in the magnetic medium. The write head is capable of writing effectively on state-of-the-art PMR recording media having Hk of 20 kOe or more.

摘要翻译： TAMR（热辅助磁记录）写入器具有带有后缘磁屏蔽的窄极端。 窄极尖写头使用在等离子体发生层中形成的激光产生的边缘等离子体激元的能量来局部加热低于其居里温度Tc的PMR磁记录介质。 当与窄尖端的作用相结合时，这种局部加热到低于Tc的温度足以在磁性介质中产生良好的转变和窄的轨道宽度。 写头能够有效地写入具有20kOe以上Hk的最先进的PMR记录介质。

公开(公告)号：US20120326712A1

公开(公告)日：2012-12-27

申请号：US13134925

申请日：2011-06-21

申请人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Ioan Tudosa ,  Yuchen Zhou ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： G01R33/02

CPC分类号： G01R33/093

摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.

摘要翻译： 高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。 薄膜样品可以无图案化。 探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个 磁膜堆中的层改变方向。 可以从不同电流频率的电压确定测得的谐振曲线。 通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。 在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。