公开(公告)号：US10962825B2

公开(公告)日：2021-03-30

申请号：US16429841

申请日：2019-06-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Qin ,  Kuanjun Peng ,  Xiaolong Li ,  Tieshi Wang ,  Xueling Gao ,  Jintao Peng ,  Shengnan Li

IPC: G02F1/1335 ,  G02F1/1337 ,  G02F1/1343

Abstract: A display panel is provided, including an organic electroluminescent device including an anode layer, a liquid crystal cell on a light exit side of the organic electroluminescent device. The liquid crystal cell includes a liquid crystal layer, a linear polarizer on a side of the liquid crystal cell facing away from the organic electroluminescent device and configured to convert ambient light into a first polarized light, and an electrode assembly configured to control deflection of liquid crystal molecules in the liquid crystal layer to convert reflected light from the anode layer into a second polarized light. A second polarization direction of the second polarized light is different from a first polarization direction of the first polarized light. The display panel may decrease the intensity of reflected light perceived by the user when viewing the displayed image in an ambient environment.

公开(公告)号：US10896635B2

公开(公告)日：2021-01-19

申请号：US16482107

申请日：2018-09-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanhui Xi ,  Bin Dai ,  Xiaomang Zhang ,  Yan Sun ,  Kuanjun Peng ,  Haijun Niu ,  Xiaolong Li ,  Donghui Wang

IPC: G09G3/20

Abstract: Disclosed is a primary color conversion method, which may expand primary color signals that are applicable to a display device. The primary color conversion method includes: acquiring color coordinates and a brightness value of a first color in a first color gamut having M primary colors according to gray-scale values of the M primary colors corresponding to the first color; and mapping the color coordinates and the luminance value of the first color in the first color gamut to color coordinates and a brightness value of a second color corresponding to the first color in a second color gamut having N primary colors. 3≤M, 3≤N, M is different from N, and M and N are positive integers.

公开(公告)号：US20200319521A1

公开(公告)日：2020-10-08

申请号：US16956066

申请日：2019-10-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Wei Qin ,  Xiaolong Li ,  Tieshi Wang ,  Jintao Peng ,  Xueling Gao ,  Yanan Niu ,  Kuanjun Peng ,  Shengnan Li

IPC: G02F1/155 ,  G02F1/29 ,  G02F1/13357 ,  G02F1/1335

Abstract: A display panel, a method for preparing a display panel and a method for adjusting an intensity of ambient light reflected on a display panel are provided in embodiments of the disclosure. The display panel includes: a base substrate; a plurality of sub-pixel units (20) on the base substrate comprising a plurality of light emitting portions respectively; an electrochromic assembly on a light-emergent side of the plurality of light emitting portions; and a light intensity detector configured to detect an incident intensity of ambient light, and the electrochromic assembly comprises a plurality of electrochromic portions covering the plurality of light emitting portions, respectively; and transmittance of the plurality of electrochromic portions for ambient light varies with a change in the incident intensity of ambient light.

公开(公告)号：US20200174359A1

公开(公告)日：2020-06-04

申请号：US16334870

申请日：2018-09-21

Applicant: Beijing BOE Display Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Mingxuan Liu ,  Huibin Guo ,  Yongzhi Song ,  Xiaoxiang Zhang ,  Wenqing Xu ,  Zumou Wu ,  Xiaolong Li

IPC: G03F1/26

Abstract: Disclosed are a manufacturing method of a phase shift mask and a phase shift mask. The manufacturing method of a phase shift mask includes: forming a pattern of metal shielding layer on a base substrate; forming a phase shift layer and a first photoresist layer in sequence on the pattern of metal shielding layer; patterning the first photoresist layer with the pattern of metal shielding layer serving as a mask to form a pattern of first photoresist layer; and etching the phase shift layer with the pattern of first photoresist layer serving as a mask to form a pattern of phase shift layer.

公开(公告)号：US10355107B2

公开(公告)日：2019-07-16

申请号：US15543726

申请日：2016-07-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jian Min ,  Xiaolong Li ,  Tao Gao ,  Liangjian Li ,  Zhengyin Xu

IPC: H01L21/02 ,  H01L21/30 ,  H01L27/12 ,  H01L29/36 ,  H01L29/66 ,  H01L21/027 ,  H01L29/786

Abstract: The present application discloses a method of fabricating a polycrystalline silicon thin film transistor, the method including forming an amorphous silicon layer on a base substrate having a pattern corresponding to a polycrystalline silicon active layer of the thin film transistor; the amorphous silicon layer having a first region corresponding to a source electrode and drain electrode contact region in the polycrystalline silicon active layer and a second region corresponding to a channel region in the polycrystalline silicon active layer; forming a first dopant layer on a side of the second region distal to the base substrate; forming a second dopant layer on a side of the first region distal to the base substrate; and crystallizing the amorphous silicon layer, the first dopant layer, and the second dopant layer to form the polycrystalline silicon active layer, the polycrystalline silicon active layer being doped with a dopant of the first dopant layer in the second region and doped with a dopant of the second dopant layer in the first region during the step of crystallizing the amorphous silicon layer.

公开(公告)号：US10312311B2

公开(公告)日：2019-06-04

申请号：US15519313

申请日：2016-11-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Zheng Liu ,  Xiaolong Li ,  Lujiang Huang Fu

IPC: H01L27/32 ,  G02F1/1368 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/311 ,  H01L29/423

Abstract: The disclosed subject matter provides a thin film transistor and a fabricating method thereof. The thin film transistor includes a substrate, a source electrode and a drain electrode on the substrate, an active layer on the source and drain electrodes, a gate insulating layer on the active layer, and a gate electrode on the gate insulating layer. The active layer extends from the source electrode towards the drain electrode along a non-linear path.

公开(公告)号：US10312271B2

公开(公告)日：2019-06-04

申请号：US15759498

申请日：2017-08-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng Liu ,  Xiaolong Li

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: An array substrate, a manufacturing method thereof and a display device. The array substrate includes a substrate, a thin film transistor on the substrate, and including an active layer including a source region, a drain region and a channel region between the source region and the drain region; a heat dissipation layer disposed between the substrate and the drain region; and the orthographic projection of the heat dissipation layer on the substrate at least covers the orthographic projection of a part of the source region and a part of the drain region on the substrate. The manufacturing method is for the manufacturing of the array substrate. The array substrate can improve the sizes and uniformity of the crystal particles.

公开(公告)号：US10249735B2

公开(公告)日：2019-04-02

申请号：US15236696

申请日：2016-08-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jian Min ,  Xiaolong Li ,  Zhengyin Xu ,  Ping Song ,  Youwei Wang

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L21/3105 ,  H01L27/12 ,  H01L29/786 ,  H01L29/423

Abstract: The present disclosure provides a TFT, its manufacturing method, an array substrate and a display device. The method includes steps of: forming a pattern of a gate electrode on a base substrate; forming a gate insulation layer with an even surface; forming a pattern of a polysilicon semiconductor layer; and forming patterns of a source electrode and a drain electrode. The step of forming the pattern of the polysilicon semiconductor layer includes: crystallizing the amorphous silicon layer, so as to form the polysilicon semiconductor layer.

公开(公告)号：US10199506B2

公开(公告)日：2019-02-05

申请号：US15084802

申请日：2016-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoyong Lu ,  Zheng Liu ,  Xiaolong Li ,  Dong Li ,  Huijuan Zhang ,  Liang Sun

IPC: H01L29/786 ,  H01L29/66

Abstract: The embodiments of the present invention disclose a low temperature poly-silicon (LTPS) transistor array substrate and a method of fabricating the same, and a display device. The LTPS transistor array substrate comprises a substrate; a poly-silicon semiconductor active region provided on the substrate; a gate insulated from the poly-silicon semiconductor active region; and a dielectric spacer region provided on a side wall of the gate, wherein a portion of the poly-silicon semiconductor active region corresponding to the dielectric spacer region comprises a buffer region, and the dielectric spacer region surrounds the side wall of the gate and covers the buffer region.

公开(公告)号：US20180307276A1

公开(公告)日：2018-10-25

申请号：US15814604

申请日：2017-11-16

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaolong Li ,  Tieshi Wang ,  Zhiqiang Xu ,  Wei Qin ,  Kuanjun Peng

IPC: G06F1/16 ,  G02B27/01 ,  G06F3/14

Abstract: Embodiments of the disclosure provide a display panel, a display device and a method for driving the display panel. The display panel includes a substrate and a pixel array disposed on the substrate and comprising M*N pixel units, wherein the M*N pixel units are arranged in a barrel or a pillow-like arrangement, and wherein M and N are positive integers.