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公开(公告)号：US12219806B2
公开(公告)日：2025-02-04
申请号：US17379017
申请日：2021-07-19
Inventor： Wei Xia , Tao Gao , Yanqiang Wang , Jie Li
IPC: H01L51/52 , H01L27/32 , H10K50/824 , H10K50/86 , H10K59/122 , H10K59/35 , H10K71/00 , H10K59/12 , H10K59/38
Abstract: A display panel includes a display substrate and a reflective layer. The display substrate includes light-emitting regions and a non-light-emitting region. The reflective layer is located on a light exit side of the display substrate and includes a plurality of filter portions and reflective portions arranged between every two adjacent filter portions. The reflective portions correspond to the non-light-emitting region, and the filter portions correspond to the light-emitting regions.
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公开(公告)号：US12219794B2
公开(公告)日：2025-02-04
申请号：US17425114
申请日：2021-01-04
IPC: H10K50/842 , H10K59/12 , H10K59/131 , H10K71/00 , H10K77/10
Abstract: A display substrate, a method manufacturing thereof and a display device are provided, including a base film layer, a functional film layer and a partial display region with hole-forming areas dividing an island area for displaying and a bridge area for signal transmission. The display substrate further includes a separation structure on the base film layer in the bridge area, which separates a target functional film layer into first and second parts. The target function film layer includes any functional film layer formed at a side of the separation structure away from the base film layer, the first part includes a part of the target functional film layer located at a side of the separation structure away from the hole-forming area, and the second part includes a part of the target functional film layer located at a side of the separation structure near the hole-forming area.
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公开(公告)号：US20240414944A1
公开(公告)日：2024-12-12
申请号：US18810259
申请日：2024-08-20
Inventor： Bingqiang Gui , Yang Yu , Peng Huang , Tao Gao , Wenqiang Li , Ke Liu
IPC: H10K59/121 , H10K50/86 , H10K59/12
Abstract: A display substrate is provided, including: a base substrate, and a first semiconductor layer, a first conductive layer, a second semiconductor layer and a fourth conductive layer sequentially arranged on the base substrate. The display substrate includes first and third transistors. The first transistor includes a first active layer in the second semiconductor layer, and first bottom and top gate electrodes respectively on opposite sides of the first active layer. The third transistor includes a third active layer in the first semiconductor layer and a third gate electrode, the third active layer containing a polysilicon semiconductor material. The fourth conductive layer is on a side of the first top gate electrode away from the base substrate, and includes second and third conductive components. The first transistor is electrically connected to the third gate electrode of the third transistor through the second and third conductive components.
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公开(公告)号：US11910660B2
公开(公告)日：2024-02-20
申请号：US17267376
申请日：2020-04-29
IPC: H01L33/00 , H10K59/124 , H10K50/813 , H10K50/844 , H10K71/00 , H10K59/131 , H10K59/12 , H10K77/10 , H10K102/00
CPC classification number: H10K59/124 , H10K50/813 , H10K50/844 , H10K71/00 , H10K59/1201 , H10K59/131 , H10K77/111 , H10K2102/311
Abstract: Provided are an organic light-emitting display substrate and a manufacturing method thereof, and an organic light-emitting display device. A display area of the display substrate includes at least one opening. The display substrate includes a substrate, and an organic layer, a first inorganic layer, an anode layer and an organic functional layer that are sequentially arranged on one side of the substrate. The inorganic layer and the organic layer has at least one annular partition groove corresponding to each opening. A width of an orthographic projection of the notch of the annular partition groove on the substrate is smaller than that of an orthographic projection of the annular partition groove on the substrate. The functional layer includes a first organic functional material portion located outside the annular partition groove and a second organic functional material portion located inside the annular partition groove that are not connected.
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公开(公告)号：US20210104585A1
公开(公告)日：2021-04-08
申请号：US16462850
申请日：2018-09-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Tao Gao
Abstract: An organic light-emitting diode display substrate, a method of manufacturing the same, and a display apparatus are provided. The organic light-emitting diode display substrate includes: a base substrate; a pixel defining layer on the base substrate and defining a plurality of pixel regions, wherein a first electrode, a second electrode and an organic light-emitting functional layer between the first electrode and the second electrode are disposed in each of at least two adjacent ones of the plurality of pixel regions; and a conducting wire on the pixel defining layer and configured to connect the second electrodes located in the at least two adjacent pixel regions.
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Patent Agency Ranking
公开(公告)号：US10707077B2
公开(公告)日：2020-07-07
申请号：US16113776
申请日：2018-08-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Tao Gao , Weifeng Zhou
IPC: H01L21/02 , B23K26/08 , H01L21/67 , B23K26/354 , B23K103/00 , B23K101/40 , H01L27/12
Abstract: A method and device for manufacturing low temperature poly-silicon, and a laser assembly are provided. A method for manufacturing low temperature poly-silicon includes forming an amorphous silicon layer on a substrate; controlling a relative movement of a laser assembly to the substrate in a direction perpendicular to a thickness of the substrate, and controlling a laser beam emitted from the laser assembly to irradiate the amorphous silicon layer on the substrate, to recrystallize an amorphous silicon in a region to be irradiated with the laser beam in the amorphous silicon layer. In a direction of the substrate moving relative to the laser assembly, energy of the laser beam emitted by the laser assembly in a same period of time decreases gradually.
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公开(公告)号：US20190304782A1
公开(公告)日：2019-10-03
申请号：US16113776
申请日：2018-08-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Tao Gao , Weifeng Zhou
Abstract: A method and device for manufacturing low temperature poly-silicon, and a laser assembly are provided. A method for manufacturing low temperature poly-silicon includes forming an amorphous silicon layer on a substrate; controlling a relative movement of a laser assembly to the substrate in a direction perpendicular to a thickness of the substrate, and controlling a laser beam emitted from the laser assembly to irradiate the amorphous silicon layer on the substrate, to recrystallize an amorphous silicon in a region to be irradiated with the laser beam in the amorphous silicon layer. In a direction of the substrate moving relative to the laser assembly, energy of the laser beam emitted by the laser assembly in a same period of time decreases gradually.
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8.发明申请Array Substrate And Manufacturing Method For The Same, And Totally Reflective Type Liquid Crystal Display 审中-公开阵列基板及其制造方法及其全反射型液晶显示器公开(公告)号：US20160357044A1
公开(公告)日：2016-12-08
申请号：US14891729
申请日：2015-05-22
Applicant: BOE Technology Group Co., Ltd.
Inventor： Zhijun Lv , Tailiang Li , Tao Gao , Ce Ning , Shuang Sun
IPC: G02F1/1368 , G02F1/1343 , H01L29/417 , H01L29/45 , H01L29/423 , G02F1/1335 , H01L29/49
CPC classification number: G02F1/1368 , G02F1/133345 , G02F1/133553 , G02F1/13439 , G02F1/1362 , G02F1/136227 , G02F2201/123 , G02F2203/02 , H01L27/124 , H01L27/1248 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908
Abstract: The present disclosure discloses an array substrate, comprising a substrate, a plurality of pixel regions on the substrate, and a thin-film transistor formed in each of the pixel regions, each of the pixel regions comprising a pixel electrode region, wherein, the thin-film transistor comprises a gate layer and a source/drain layer formed laminatedly on the substrate; the array substrate further comprises a flat layer and a reflective metal layer formed in sequence on the substrate and covering at least the pixel electrode region and the thin-film transistor; the reflective metal layer is electrically connected to a drain of the thin-film transistor; and at least one of the gate layer and the source/drain layer is formed of a single metal layer. The present disclosure further provides a method for manufacturing the array substrate and a totally reflective type liquid crystal display comprising the array substrate.
Abstract translation: 本公开公开了一种阵列基板，包括基板，基板上的多个像素区域和形成在每个像素区域中的薄膜晶体管，每个像素区域包括像素电极区域，其中，薄的 薄膜晶体管包括层叠在基板上的栅极层和源极/漏极层; 阵列基板还包括依次形成在基板上并覆盖至少像素电极区域和薄膜晶体管的平坦层和反射金属层; 反射金属层电连接到薄膜晶体管的漏极; 并且栅极层和源极/漏极层中的至少一个由单个金属层形成。 本公开还提供了一种用于制造阵列基板的方法和包括阵列基板的全反射型液晶显示器。
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9.发明授权Thin film transistor, array substrate and manufacturing method thereof, and display device 有权薄膜晶体管，阵列基板及其制造方法以及显示装置公开(公告)号：US09391207B2
公开(公告)日：2016-07-12
申请号：US14422213
申请日：2014-06-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Tao Gao , Weifeng Zhou
IPC: H01L21/336 , H01L29/10 , H01L29/786 , H01L29/66 , H01L27/12
CPC classification number: H01L29/786 , H01L27/1222 , H01L27/1255 , H01L27/1288 , H01L29/6675 , H01L29/66757 , H01L29/78675
Abstract: The present invention provides a low-temperature polysilicon thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The present invention is related to display technology. The low-temperature polysilicon thin film transistor comprises: an active layer disposed on a substrate, and a source electrode and a drain electrode respectively connected to the active layer, the active layer comprises a source contact region, a drain contact region, and a semiconductor region disposed between the source contact region and the drain contact region, the source contact region and the drain contact region are both conductive, both of the source contact region and the drain contact region include a semiconductor substrate and ions distributed in the semiconductor substrate, the source electrode covers the source contact region directly, and the drain electrode covers the drain contact region directly.
Abstract translation: 本发明提供一种低温多晶硅薄膜晶体管及其制造方法，阵列基板及其制造方法以及显示装置。 本发明涉及显示技术。 低温多晶硅薄膜晶体管包括：设置在基板上的有源层和分别连接到有源层的源电极和漏电极，有源层包括源极接触区域，漏极接触区域和半导体 设置在源极接触区域和漏极接触区域之间的区域，源极接触区域和漏极接触区域都是导电的，源极接触区域和漏极接触区域都包括半导体衬底和分布在半导体衬底中的离子， 源电极直接覆盖源极接触区域，漏电极直接覆盖漏极接触区域。
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公开(公告)号：US12242686B2
公开(公告)日：2025-03-04
申请号：US18548339
申请日：2022-07-27
Inventor： Yu Wang , Guoyi Cui , Tao Gao , Zeliang Li
Abstract: A touch structure includes at least one touch functional layer group and at least one protective pad layer. The at least one touch functional layer group includes an organic layer and a conductive layer that are sequentially stacked. The at least one protective pad layer is arranged in one-to-one correspondence with the at least one touch functional layer group. A protective pad layer is located between a conductive layer and an organic layer of a corresponding touch functional layer group. An orthographic projection of the protective pad layer on the organic layer at least partially overlaps with an orthographic projection of the conductive layer on the organic layer.
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