DISPLAY SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE

    公开(公告)号:US20240414944A1

    公开(公告)日:2024-12-12

    申请号:US18810259

    申请日:2024-08-20

    Abstract: A display substrate is provided, including: a base substrate, and a first semiconductor layer, a first conductive layer, a second semiconductor layer and a fourth conductive layer sequentially arranged on the base substrate. The display substrate includes first and third transistors. The first transistor includes a first active layer in the second semiconductor layer, and first bottom and top gate electrodes respectively on opposite sides of the first active layer. The third transistor includes a third active layer in the first semiconductor layer and a third gate electrode, the third active layer containing a polysilicon semiconductor material. The fourth conductive layer is on a side of the first top gate electrode away from the base substrate, and includes second and third conductive components. The first transistor is electrically connected to the third gate electrode of the third transistor through the second and third conductive components.

    ORGANIC LIGHT-EMITTING DIODE DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS

    公开(公告)号:US20210104585A1

    公开(公告)日:2021-04-08

    申请号:US16462850

    申请日:2018-09-04

    Inventor: Tao Gao

    Abstract: An organic light-emitting diode display substrate, a method of manufacturing the same, and a display apparatus are provided. The organic light-emitting diode display substrate includes: a base substrate; a pixel defining layer on the base substrate and defining a plurality of pixel regions, wherein a first electrode, a second electrode and an organic light-emitting functional layer between the first electrode and the second electrode are disposed in each of at least two adjacent ones of the plurality of pixel regions; and a conducting wire on the pixel defining layer and configured to connect the second electrodes located in the at least two adjacent pixel regions.

    Method and device for manufacturing low temperature poly-silicon, and laser assembly

    公开(公告)号:US10707077B2

    公开(公告)日:2020-07-07

    申请号:US16113776

    申请日:2018-08-27

    Abstract: A method and device for manufacturing low temperature poly-silicon, and a laser assembly are provided. A method for manufacturing low temperature poly-silicon includes forming an amorphous silicon layer on a substrate; controlling a relative movement of a laser assembly to the substrate in a direction perpendicular to a thickness of the substrate, and controlling a laser beam emitted from the laser assembly to irradiate the amorphous silicon layer on the substrate, to recrystallize an amorphous silicon in a region to be irradiated with the laser beam in the amorphous silicon layer. In a direction of the substrate moving relative to the laser assembly, energy of the laser beam emitted by the laser assembly in a same period of time decreases gradually.

    METHOD AND DEVICE FOR MANUFACTURING LOW TEMPERATURE POLY-SILICON, AND LASER ASSEMBLY

    公开(公告)号:US20190304782A1

    公开(公告)日:2019-10-03

    申请号:US16113776

    申请日:2018-08-27

    Abstract: A method and device for manufacturing low temperature poly-silicon, and a laser assembly are provided. A method for manufacturing low temperature poly-silicon includes forming an amorphous silicon layer on a substrate; controlling a relative movement of a laser assembly to the substrate in a direction perpendicular to a thickness of the substrate, and controlling a laser beam emitted from the laser assembly to irradiate the amorphous silicon layer on the substrate, to recrystallize an amorphous silicon in a region to be irradiated with the laser beam in the amorphous silicon layer. In a direction of the substrate moving relative to the laser assembly, energy of the laser beam emitted by the laser assembly in a same period of time decreases gradually.

    Array Substrate And Manufacturing Method For The Same, And Totally Reflective Type Liquid Crystal Display
    8.
    发明申请
    Array Substrate And Manufacturing Method For The Same, And Totally Reflective Type Liquid Crystal Display 审中-公开
    阵列基板及其制造方法及其全反射型液晶显示器

    公开(公告)号:US20160357044A1

    公开(公告)日:2016-12-08

    申请号:US14891729

    申请日:2015-05-22

    Abstract: The present disclosure discloses an array substrate, comprising a substrate, a plurality of pixel regions on the substrate, and a thin-film transistor formed in each of the pixel regions, each of the pixel regions comprising a pixel electrode region, wherein, the thin-film transistor comprises a gate layer and a source/drain layer formed laminatedly on the substrate; the array substrate further comprises a flat layer and a reflective metal layer formed in sequence on the substrate and covering at least the pixel electrode region and the thin-film transistor; the reflective metal layer is electrically connected to a drain of the thin-film transistor; and at least one of the gate layer and the source/drain layer is formed of a single metal layer. The present disclosure further provides a method for manufacturing the array substrate and a totally reflective type liquid crystal display comprising the array substrate.

    Abstract translation: 本公开公开了一种阵列基板,包括基板,基板上的多个像素区域和形成在每个像素区域中的薄膜晶体管,每个像素区域包括像素电极区域,其中,薄的 薄膜晶体管包括层叠在基板上的栅极层和源极/漏极层; 阵列基板还包括依次形成在基板上并覆盖至少像素电极区域和薄膜晶体管的平坦层和反射金属层; 反射金属层电连接到薄膜晶体管的漏极; 并且栅极层和源极/漏极层中的至少一个由单个金属层形成。 本公开还提供了一种用于制造阵列基板的方法和包括阵列基板的全反射型液晶显示器。

    Thin film transistor, array substrate and manufacturing method thereof, and display device
    9.
    发明授权
    Thin film transistor, array substrate and manufacturing method thereof, and display device 有权
    薄膜晶体管,阵列基板及其制造方法以及显示装置

    公开(公告)号:US09391207B2

    公开(公告)日:2016-07-12

    申请号:US14422213

    申请日:2014-06-12

    Abstract: The present invention provides a low-temperature polysilicon thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The present invention is related to display technology. The low-temperature polysilicon thin film transistor comprises: an active layer disposed on a substrate, and a source electrode and a drain electrode respectively connected to the active layer, the active layer comprises a source contact region, a drain contact region, and a semiconductor region disposed between the source contact region and the drain contact region, the source contact region and the drain contact region are both conductive, both of the source contact region and the drain contact region include a semiconductor substrate and ions distributed in the semiconductor substrate, the source electrode covers the source contact region directly, and the drain electrode covers the drain contact region directly.

    Abstract translation: 本发明提供一种低温多晶硅薄膜晶体管及其制造方法,阵列基板及其制造方法以及显示装置。 本发明涉及显示技术。 低温多晶硅薄膜晶体管包括:设置在基板上的有源层和分别连接到有源层的源电极和漏电极,有源层包括源极接触区域,漏极接触区域和半导体 设置在源极接触区域和漏极接触区域之间的区域,源极接触区域和漏极接触区域都是导电的,源极接触区域和漏极接触区域都包括半导体衬底和分布在半导体衬底中的离子, 源电极直接覆盖源极接触区域,漏电极直接覆盖漏极接触区域。

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