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    SILICON AND SILICA NANOSTRUCTURES AND METHOD OF MAKING SILICON AND SILICA NANOSTRUCTURES
    84.
    发明申请
    SILICON AND SILICA NANOSTRUCTURES AND METHOD OF MAKING SILICON AND SILICA NANOSTRUCTURES 有权

    公开(公告)号：US20220098094A1

    公开(公告)日：2022-03-31

    申请号：US17545493

    申请日：2021-12-08

    Applicant: CORNING INCORPORATED ,  ICFO

    Inventor： Albert Carrilero ,  Prantik Mazumder ,  Valerio Pruneri

    IPC: C03C15/00 ,  C30B29/60 ,  C30B29/06 ,  C30B29/18 ,  C30B11/12 ,  C01B33/12

    Abstract: Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

    Silicon and silica nanostructures and method of making silicon and silica nanostructures
    85.
    发明授权
    Silicon and silica nanostructures and method of making silicon and silica nanostructures 有权

    公开(公告)号：US11225434B2

    公开(公告)日：2022-01-18

    申请号：US16891606

    申请日：2020-06-03

    Applicant: CORNING INCORPORATED ,  ICFO

    Inventor： Albert Carrilero ,  Prantik Mazumder ,  Valerio Pruneri

    IPC: C30B29/06 ,  C03C15/00 ,  C30B29/60 ,  C30B29/18 ,  C30B11/12 ,  C01B33/12

    Abstract: Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

    HERMETIC METALLIZED VIA WITH IMPROVED RELIABILITY
    86.
    发明申请
    HERMETIC METALLIZED VIA WITH IMPROVED RELIABILITY 有权

    公开(公告)号：US20210407896A1

    公开(公告)日：2021-12-30

    申请号：US17470519

    申请日：2021-09-09

    Applicant: CORNING INCORPORATED

    Inventor： Mandakini Kanungo ,  Prantik Mazumder ,  Chukwudi Azubuike Okoro ,  Ah-Young Park ,  Scott Christopher Pollard ,  Rajesh Vaddi

    IPC: H01L23/498 ,  H05K1/02 ,  C23C14/18 ,  C23C18/38 ,  C23C28/02 ,  H05K1/03 ,  H05K1/11 ,  H01L21/768 ,  H01L23/15 ,  C03C17/06 ,  H01L23/48 ,  C03C3/06 ,  C03C15/00 ,  C03C23/00 ,  H05K3/38

    Abstract: According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 μm at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 μm at the second major surface and fully fills the via between the first cavity and the second cavity.

    TEMPORARY BONDING OF SUBSTRATES WITH LARGE ROUGHNESS USING MULTILAYERS OF POLYELECTROLYTES
    89.
    发明申请
    TEMPORARY BONDING OF SUBSTRATES WITH LARGE ROUGHNESS USING MULTILAYERS OF POLYELECTROLYTES 有权

    公开(公告)号：US20210261836A1

    公开(公告)日：2021-08-26

    申请号：US17232746

    申请日：2021-04-16

    Applicant: CORNING INCORPORATED

    Inventor： Indrani Bhattacharyya ,  Jen-Chieh Lin ,  Prantik Mazumder

    IPC: C09J165/00 ,  B32B17/10 ,  B32B7/06 ,  C03C17/32 ,  C09D165/00

    Abstract: Articles and methods of making articles, for example glass articles, comprising a thin sheet and a carrier, wherein the thin sheet and carrier are bonded together using a multilayered modification (coating) layer, for example an alternating cationic/anionic polymer coating layer, and associated deposition methods, the carrier, or both, to control van der Waals, hydrogen and covalent bonding between the thin sheet and the carrier. The modification layer bonds the thin sheet and carrier together with sufficient bond strength to prevent delamination of the thin sheet and the carrier during high temperature (≤400° C.) processing while also preventing formation of a permanent bond between the sheets during such processing.

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