Multi-layer ceramic capacitor
    82.
    发明授权
    Multi-layer ceramic capacitor 有权
    多层陶瓷电容

    公开(公告)号:US07545626B1

    公开(公告)日:2009-06-09

    申请号:US12073917

    申请日:2008-03-12

    IPC分类号: H01G4/06

    CPC分类号: H01G4/30 H01G4/12 H01G4/255

    摘要: A multi-layer ceramic capacitor including: a ceramic sintered body having cover layers provided on upper and lower surfaces thereof as outermost layers and a plurality of ceramic layers disposed between the cover layers; first and second internal electrodes formed on the ceramic layers, the first and second internal electrodes stacked to interpose one of the ceramic layers; first and second external electrodes formed on opposing sides of the ceramic sintered body to connect to the first and second internal electrodes, respectively; and anti-oxidant electrode layers formed between the cover layers and adjacent ones of the ceramic layers, respectively, the anti-oxidant electrode layers arranged not to affect capacitance.

    摘要翻译: 一种多层陶瓷电容器,包括:陶瓷烧结体,其具有在其上表面和下表面上设置为最外层的覆盖层和设置在所述覆盖层之间的多个陶瓷层; 形成在所述陶瓷层上的第一和第二内部电极,所述第一和第二内部电极层叠以插入所述陶瓷层之一; 形成在陶瓷烧结体的相对侧上的第一和第二外部电极分别连接到第一和第二内部电极; 以及在覆盖层和相邻的陶瓷层之间形成的抗氧化剂电极层,抗氧化剂电极层分别布置成不影响电容。

    Photonic crystal light emitting device using photon-recycling
    83.
    发明申请
    Photonic crystal light emitting device using photon-recycling 有权
    光子晶体发光器件采用光子回收

    公开(公告)号:US20080217639A1

    公开(公告)日:2008-09-11

    申请号:US12007495

    申请日:2008-01-11

    IPC分类号: H01L33/00

    摘要: A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.

    摘要翻译: 1.一种光子晶体发光器件,包括:发光二极管(LED)发光结构,包括第一导电半导体层,第二导电半导体层和插入在所述第一和第二导电半导体层之间的有源层; 以及形成在与所述有源层相反的所述第一导电半导体层的一个表面上的第一光子再循环发光层,其中所述第一光子再循环发光层吸收从所述LED发光结构发射的初级光,并发射光 具有与初级光的波长不同的波长,并且在第一光子再循环发光层的整个厚度上形成光子晶体结构。

    Air conditioner
    84.
    发明申请
    Air conditioner 审中-公开
    冷气机

    公开(公告)号:US20080000252A1

    公开(公告)日:2008-01-03

    申请号:US11710540

    申请日:2007-02-26

    IPC分类号: F25D21/14

    摘要: An air conditioner is provided. The air conditioner includes a main and sub drain pan, a first and second heat exchanger, a condensed water pipe, and a pipe coupling element. The main drain pan is provided between a front frame and a rear frame, to divide a space between the rear frame and the front frame into an upper and lower section. The first and second heat exchangers are respectively provided at a lower and upper portion of the main drain pan, to allow heat exchange to occur between air and coolant. The sub-drain pan is provided at the lower portion of the main drain pan, to collect condensed water generated by the first and second heat exchangers. The condensed water pipe guides condensed water collected in a base pan to the sub-drain pan. The pipe coupling element detachably couples one end of the condensed water pipe to the sub-drain pan.

    摘要翻译: 提供空调。 空调包括主排水盘,副排水盘,第一和第二热交换器,冷凝水管和管接头元件。 主排水盘设置在前框架和后框架之间,以将后框架和前框架之间的空间分成上部和下部。 第一和第二热交换器分别设置在主排水盘的下部和上部,以允许在空气和冷却剂之间发生热交换。 副排水盘设置在主排水盘的下部,以收集由第一和第二热交换器产生的冷凝水。 冷凝水管将收集在底盘中的冷凝水引导到副排水盘。 管连接元件将冷凝水管的一端可拆卸地连接到副排水盘。

    Semiconductor device and method for fabricating the same

    公开(公告)号:US06573576B2

    公开(公告)日:2003-06-03

    申请号:US09944151

    申请日:2001-09-04

    IPC分类号: H01L2976

    摘要: A semiconductor device and a method for fabricating the same is disclosed, which minimizes device degradation, minimizes noises, and simplifies the fabrication process. The device includes a substrate having a first semiconductor layer, a buried insulating film, and a second semiconductor layer stacked; a field oxide film for separating the second semiconductor layer into a first region and a second region; a recess region formed in a particular region of the second region; gate insulating films and gate electrodes formed in stacks on each of a particular region in the first region and the recess region in the second region; first impurity regions formed in surfaces of the second semiconductor layer on both sides of the gate electrode in the first region; and second impurity regions formed in surfaces of the second semiconductor layer on both sides of the gate electrode in the recess region in the second region so that the second semiconductor layer below the gate electrode is fully depleted.