摘要:
An apparatus for generating an in-phase/quadrature-phase (I/Q) signal in a wireless transceiver is disclosed, including a local oscillator for generating a local oscillation signal, and first and second mixers for mixing the oscillation signal with a transmission/reception signal to convert the transmission/reception signal into a baseband or high-frequency signal. The apparatus includes a phase locked circuit for controlling the local oscillator, and a polyphase filter installed between the local oscillator and the mixers, for separating the oscillation signal from the local oscillator into an I signal and a Q signal depending on a control signal from the phase locked circuit, and outputting the separated I and Q signals to the first and second mixers, respectively.
摘要:
An apparatus for generating an in-phase/quadrature-phase (I/Q) signal in a wireless transceiver is disclosed, including a local oscillator for generating an oscillation signal, and first and second mixers for mixing an oscillation signal with a transmission/reception signal to convert the transmission/reception signal into a baseband or high-frequency signal. The apparatus includes a phase locked circuit for controlling the local oscillator, and a polyphase filter installed between the local oscillator and the mixers, for separating the oscillation signal from the local oscillator into an I signal and a Q signal depending on a control signal from the phase locked circuit, and outputting the separated I and Q signals to the first and second mixers, respectively.
摘要:
A frequency mixing apparatus is provided. In the frequency mixing apparatus, a PMOS transistor is coupled to an NMOS transistor in a cascode configuration and an LO signal is applied to the bulks of the PMOS and NMOS transistors so that an input signal applied to their gates is mixed with the LO signal. High isolation between the bulks and gates of the transistors resulting from application of the LO signal to the bulks prevents leakage of the LO signal, thereby decreasing a DC offset voltage. This renders the frequency mixing applicable to a DCR. Also, due to the cascade configuration similar to an inverter configuration, the frequency mixing apparatus can be incorporated in an FPGA of a MODEM in SDR applications. Frequency mixing based on switching of a threshold voltage decreases a noise factor and enables frequency mixing in a low supply voltage range, thereby decreasing power consumption.
摘要:
An active inductor capable of tuning a self-resonant frequency, an inductance, a Q factor, and a peak Q frequency by applying a tunable feedback resistor to a cascode-grounded active inductor is disclosed. The tunable active inductor includes a first transistor having a source connected to a power supply voltage and a gate connected to first bias voltage; a second transistor having a drain connected to a drain of the first transistor and a gate connected to a second bias voltage; a third transistor having a drain connected to a source of the second transistor and a source connected to a ground voltage; a fourth transistor having a drain connected to a gate of the third transistor, a source connected to the ground voltage and a gate connected to a third bias voltage; a fifth transistor having a source connected to the drain of the fourth transistor and a drain connected to the power supply voltage.
摘要:
Provided is a multiband low noise amplifier including a first transistor, an input matching circuit, and a first capacitor. The first transistor includes a collector electrically connected to a first power supply, a grounded emitter, and a base connected to the other end of a first inductor having one end as an input end of the low noise amplifier. The input matching circuit is connected between the collector and the base of the first transistor. The first capacitor connected to the collector of the first transistior. The input matching circuit includes a varactor. The input matching circuit includes a second capacitor connected to the varactor. The input matching circuit includes a first resistor connected to the varactor. In the multiband low noise amplifier, a varactor having a variable capacitance is installed at an input end, thereby easily performing band switching through bias voltage control by a small amount and minimizing noises that may be caused by a control signal.
摘要:
A frequency mixing apparatus is provided. In the frequency mixing apparatus, a PMOS transistor is coupled to an NMOS transistor in a cascode configuration and an LO signal is applied to the bulks of the PMOS and NMOS transistors so that an input signal applied to their gates is mixed with the LO signal. High isolation between the bulks and gates of the transistors resulting from application of the LO signal to the bulks prevents leakage of the LO signal, thereby decreasing a DC offset voltage. This renders the frequency mixing applicable to a DCR. Also, due to the cascade configuration similar to an inverter configuration, the frequency mixing apparatus can be incorporated in an FPGA of a MODEM in SDR applications. Frequency mixing based on switching of a threshold voltage decreases a noise factor and enables frequency mixing in a low supply voltage range, thereby decreasing power consumption.
摘要:
A multi-primary and distributed transformer is provided for one or more sets of parallel-connected or series-connected power amplifiers. The transformer may include a plurality of primary windings, including a first primary winding, a second primary winding, a third primary winding, and a fourth primary winding, where each of the plurality of primary windings is not directly connected to any other of the plurality of primary windings, where each primary winding includes a respective positive port and a negative port for receiving respective differential signals, where each primary winding include a respective first number of turns; and a single secondary winding having a plurality of segments, including a first segment and a second segment, where each segment includes a second number of turns, the second number of turns greater than or equal to the respective first number of turns, where the single secondary winding includes at least one output port.
摘要:
Provided is a mixer for use in a direct conversion receiver. The mixer includes Field Effect Transistors (FETs), a current source (IBias), two load resistors (RLoad), another FET, and two inductors L1 and L2. The FET M21 constitutes a current bleeding circuitry and the other components except for the two inductors L1 and L2 constitute a so-called Gilbert cell mixer.
摘要翻译:提供一种用于直接转换接收机的混频器。 混频器包括场效应晶体管(FET),电流源(IBias),两个负载电阻(RLoad),另一个FET和两个电感器L 1和L 2。 FET M 21构成电流泄放电路,除了两个电感器L 1和L 2之外的其它部件构成所谓的吉尔伯特细胞混合器。
摘要:
Disclosed is an ultra wide band signal generator. The ultra wide band signal generator generates a signal of a required frequency using a harmonic signal having a frequency range of a ultra wide band (UWB). The ultra wide band signal generator includes an active inductor for generating harmonic signals having power strengths substantially equal to each other within a non-linear operation range, the tunable active inductor capable of tuning a value thereof, an oscillator for amplifying and outputting the harmonic signals generated from the active inductor by frequency-transiting the harmonic signals into high frequency bands, and a filter for selectively outputting one of the harmonic signals output from the oscillator.
摘要:
An active inductor capable of tuning a self-resonant frequency, an inductance, a Q factor, and a peak Q frequency by applying a tunable feedback resistor to a cascode-grounded active inductor is disclosed. The tunable active inductor includes a first transistor having a source connected to a power supply voltage and a gate connected to first bias voltage; a second transistor having a drain connected to a drain of the first transistor and a gate connected to a second bias voltage; a third transistor having a drain connected to a source of the second transistor and a source connected to a ground voltage; a fourth transistor having a drain connected to a gate of the third transistor, a source connected to the ground voltage and a gate connected to a third bias voltage; a fifth transistor having a source connected to the drain of the fourth transistor and a drain connected to the power supply voltage.