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134 条记录 (耗时 0.046 秒)

    Buffer bilayers for electronic devices
    84.
    发明授权
    Buffer bilayers for electronic devices 有权
    电子设备缓冲层双层

    公开(公告)号：US08461758B2

    公开(公告)日：2013-06-11

    申请号：US12642093

    申请日：2009-12-18

    申请人： Che-Hsiung Hsu ,  Weiying Gao ,  Shiva Prakash

    发明人： Che-Hsiung Hsu ,  Weiying Gao ,  Shiva Prakash

    IPC分类号： H01L51/52 ,  H01L51/50

    CPC分类号： H01L51/5088 ,  H01L51/0037 ,  H01L51/004 ,  H01L2251/5369 ,  Y10T428/24893

    摘要： The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (a) at least one electrically conductive polymer doped with at least one non-highly-fluorinated acid polymer and (b) at least one highly-fluorinated acid polymer, and a second layer including inorganic nanoparticles which are oxides or sulfides.

    摘要翻译： 本发明涉及缓冲双层体及其在电子设备中的应用。 双层具有第一层，其包括（a）至少一种掺杂有至少一种非高度氟化的酸聚合物的导电聚合物和（b）至少一种高度氟化的酸聚合物，以及包含无机纳米颗粒的第二层， 氧化物或硫化物。

    High work function transparent conductors
    85.
    发明授权
    High work function transparent conductors 有权
    高功函数透明导体

    公开(公告)号：US08409476B2

    公开(公告)日：2013-04-02

    申请号：US13075404

    申请日：2011-03-30

    申请人： Che-Hsiung Hsu ,  Hjalti Skulason

    发明人： Che-Hsiung Hsu ,  Hjalti Skulason

    IPC分类号： H01B1/04 ,  H01B1/24

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/5206 ,  H01L2251/5369 ,  Y10S977/783 ,  Y10S977/784 ,  Y10S977/788

    摘要： There is provided a transparent conductor including conductive nanoparticles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer. The nanoparticles are carbon nanoparticles, metal nanoparticles, or combinations thereof. The carbon and metal nanoparticles are selected from nanotubes, fullerenes, and nanofibers. The acid polymers are fluorinated or highly fluorinated and have acidic groups including carboxylic acid groups, sulfonic acid groups, sulfonimide groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. The semiconductive polymers comprise homopolymers and copolymers derived from monomers selected from substituted and unsubstituted thiophenes, pyrroles, anilines, and cyclic heteroaromatics, and combinations of those. The compositions may be used in organic electronic devices (OLEDs).

    摘要翻译： 提供了包括导电纳米颗粒和（a）氟化酸聚合物和（b）掺杂有氟化酸聚合物的半导体聚合物中的至少一种的透明导体。 纳米颗粒是碳纳米颗粒，金属纳米颗粒或其组合。 碳和金属纳米颗粒选自纳米管，富勒烯和纳米纤维。 酸性聚合物是氟化的或高度氟化的并且具有酸性基团，包括羧酸基团，磺酸基团，磺酰亚胺基团，磷酸基团，膦酸基团及其组合。 半导体聚合物包含衍生自选自取代和未取代的噻吩，吡咯，苯胺和环状杂芳族化合物的单体的均聚物和共聚物，以及它们的组合。 组合物可用于有机电子器件（OLED）中。

    Buffer bilayers for electronic devices
    86.
    发明授权
    Buffer bilayers for electronic devices 失效
    电子设备缓冲层双层

    公开(公告)号：US08216685B2

    公开(公告)日：2012-07-10

    申请号：US12466879

    申请日：2009-05-15

    申请人： Che-Hsiung Hsu ,  Chi Zhang

    发明人： Che-Hsiung Hsu ,  Chi Zhang

    IPC分类号： B32B15/04

    CPC分类号： C23C14/20 ,  H01L51/0077 ,  H01L51/5088 ,  H01L2251/308 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31678 ,  Y10T428/31692 ,  Y10T428/31696

    摘要： The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer including a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.

    摘要翻译： 本发明涉及缓冲双层体及其在电子设备中的应用。 双层具有第一层，其包括（i）至少一种掺杂有至少一种非氟化聚合酸的导电聚合物和（ii）至少一种高度氟化的酸聚合物。 双层具有包括可以是一种或多种过渡金属，第13族金属，第14族金属或镧系金属的金属的第二层。

    BUFFER BILAYERS FOR ELECTRONIC DEVICES
    90.
    发明申请
    BUFFER BILAYERS FOR ELECTRONIC DEVICES 失效
    电子设备缓冲器

    公开(公告)号：US20100213446A1

    公开(公告)日：2010-08-26

    申请号：US12645634

    申请日：2009-12-23

    申请人： Chi Zhang ,  Che-Hsiung Hsu

    发明人： Chi Zhang ,  Che-Hsiung Hsu

    IPC分类号： H01L51/54 ,  B32B15/08 ,  B32B5/00

    CPC分类号： H01L51/004 ,  H01L51/0036 ,  H01L51/5088 ,  Y10T428/269 ,  Y10T428/31533 ,  Y10T428/31544 ,  Y10T428/31678 ,  Y10T428/31692

    摘要： The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer. The second layer is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.

    摘要翻译： 本发明涉及缓冲双层体及其在电子设备中的应用。 双层具有包含至少一种掺杂有至少一种高度氟化的酸性聚合物的导电聚合物的第一层。 第二层是来自可以是一种或多种过渡金属，第13族金属，第14族金属或镧系金属的金属的反应层。