公开(公告)号：US07060321B2

公开(公告)日：2006-06-13

申请号：US11011994

申请日：2004-12-14

申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

IPC分类号： B05D5/12 ,  G11B5/84

CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。

公开(公告)号：US20050168881A1

公开(公告)日：2005-08-04

申请号：US11091282

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US20050094321A1

公开(公告)日：2005-05-05

申请号：US11011957

申请日：2004-12-14

申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

IPC分类号： G01R33/09 ,  B05D7/00 ,  G11B5/127 ,  G11B5/187 ,  G11B5/29 ,  G11B5/31 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  H04R31/00

CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.