公开(公告)号：US5962871A

公开(公告)日：1999-10-05

申请号：US743176

申请日：1996-11-05

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757

摘要： A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.

公开(公告)号：US5956579A

公开(公告)日：1999-09-21

申请号：US893361

申请日：1997-07-15

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/78696 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618

摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

公开(公告)号：US5879969A

公开(公告)日：1999-03-09

申请号：US841638

申请日：1997-04-30

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Yasuhiko Takemura

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/60 ,  H01L21/77 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/66757 ,  H01L21/76897 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675 ,  G02F1/13454 ,  G02F2001/136245

摘要： In a thin-film insulated gate type field effect transistor having a metal gate in which the surface of the gate electrode is subjected to anodic oxidation, a silicon nitride film is provided so as to be interposed between the gate electrode and the gate insulating film to prevent invasion of movable ions into a channel, and also to prevent the breakdown of the gate insulating film due to a potential difference between the gate electrode and the channel region. By coating a specific portion of the gate electrode with metal material such as chrome or the like for the anodic oxidation, and then removing only the metal material such as chrome or the like together with the anodic oxide of the metal material such as chrome or the like, an exposed portion of metal gate (e.g. aluminum) is formed, and an upper wiring is connected to the exposed portion. Further, an aluminum oxide or silicon nitride is formed as an etching stopper between the gate electrode and the gate insulating film or between the substrate and the layer on the substrate, so that the over-etching can be prevented and the flatness of the element can be improved. In addition, a contact is formed in no consideration of the concept "contact hole".

公开(公告)号：US5843225A

公开(公告)日：1998-12-01

申请号：US479720

申请日：1995-06-07

申请人： Toru Takayama ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  C30B1/10

CPC分类号： H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L29/66757 ,  H01L29/78654 ,  H01L29/78675

摘要： A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400.degree. to 650.degree. C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.

摘要翻译： 一种制造半导体的方法，该半导体在较低的结晶温度下并且在较短的时间内，其包括在基片上形成绝缘体涂层; 将所述绝缘体涂层暴露于等离子体; 在暴露于所述等离子体之后，在所述绝缘体涂层上形成非晶硅膜; 在400〜650℃的温度或不高于基板的玻璃化转变温度的温度下对所述硅膜进行热处理。 通过选择性地将非晶硅膜暴露于等离子体或通过选择性地施加含有其催化作用的元素的物质来控制成核位点。 还公开了使用其制造薄膜晶体管的工艺。

公开(公告)号：US5773327A

公开(公告)日：1998-06-30

申请号：US728506

申请日：1996-10-09

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Yasuhiko Takemura

IPC分类号： H01L29/78 ,  H01L21/00 ,  H01L21/20 ,  H01L21/324 ,  H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/84 ,  H01L27/12 ,  H01L29/66757 ,  H01L29/78654 ,  H01L29/78675 ,  H01L21/2022

摘要： A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.

公开(公告)号：US5753542A

公开(公告)日：1998-05-19

申请号：US396780

申请日：1995-03-01

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L31/20 ,  H01L21/268

CPC分类号： H01L21/2026 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/41

摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

公开(公告)号：US5745195A

公开(公告)日：1998-04-28

申请号：US646511

申请日：1996-05-07

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： H01L29/786 ,  G02F1/1362 ,  H01L21/336 ,  G02F1/1343

CPC分类号： G02F1/136213

摘要： An active matrix liquid crystal display having auxiliary capacitors. Two transparent conductive layers of ITO are formed on opposite sides of an insulating film. The first conductive layer forms pixel electrodes. The second transparent conductive film overlaps at least parts of the pixel electrodes via the insulating film to form the auxiliary capacitors without deteriorating the aperture ratio of the pixels.

摘要翻译： 具有辅助电容器的有源矩阵液晶显示器。 ITO的两个透明导电层形成在绝缘膜的相对侧上。 第一导电层形成像素电极。 第二透明导电膜经由绝缘膜与至少部分像素电极重叠以形成辅助电容器，而不会降低像素的开口率。

公开(公告)号：US5696388A

公开(公告)日：1997-12-09

申请号：US745312

申请日：1996-11-12

申请人： Fumiaki Funada ,  Tatsuo Morita ,  Hirohisa Tanaka ,  Hongyong Zhang ,  Toru Takayama

发明人： Fumiaki Funada ,  Tatsuo Morita ,  Hirohisa Tanaka ,  Hongyong Zhang ,  Toru Takayama

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L29/12 ,  H01L31/036

CPC分类号： H01L27/1277 ,  Y10S148/016 ,  Y10S438/982

摘要： In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having different characteristics are constituted by using crystalline silicon film whose crystal has grown in a direction parallel with a substrate. That is, an angle formed between a crystal growing direction and a carrier moving direction are made different from each other, thereby to control a resistance imposed on the carriers when moving to determine the characteristics of the TFT. For example, when the crystal growing direction coincides with the carrier moving direction, high mobility can be given to the carriers. Further, when the crystal growing direction is arranged perpendicular to the carrier moving direction, the off-state current can be lowered.

摘要翻译： 在有源矩阵型液晶显示装置中，在外围电路部分中，布置了具有高迁移率并且能够允许大量导通电流流动的TFT。 在像素部分中，布置有具有小截止电流的TFT。 具有不同特性的这些TFT通过使用晶体在与衬底平行的方向上生长的晶体硅膜来构成。 也就是说，使晶体生长方向和载流子移动方向之间形成的角度彼此不同，从而在移动时控制施加在载流子上的电阻以确定TFT的特性。 例如，当晶体生长方向与载流子移动方向一致时，可以赋予载流子高迁移率。 此外，当晶体生长方向垂直于载流子移动方向布置时，可以降低截止电流。

公开(公告)号：US5677549A

公开(公告)日：1997-10-14

申请号：US439937

申请日：1995-05-12

申请人： Toru Takayama ,  Hongyong Zhang ,  Yasuhiko Takemura

发明人： Toru Takayama ,  Hongyong Zhang ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04 ,  H01L29/76

CPC分类号： H01L21/2022 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1277

摘要： A semiconductor circuit having a plurality of crystalline thin film transistors possessing different electrical characteristics which are formed on a substrate having an active matrix region and a driver circuit region. At least one first thin film transistor comprising a first crystalline silicon film is formed on the active matrix region of the substrate, while at least one second thin film transistor comprising a second crystalline silicon film is formed on the driver circuit region. The crystalline film of each of the first thin film transistors contains a catalyst element capable of promoting the crystallization of silicon at a higher concentration than the crystalline film of each of the second thin film transistors.

摘要翻译： 一种半导体电路，其具有形成在具有有源矩阵区域和驱动电路区域的基板上的具有不同电特性的多个晶体薄膜晶体管。 在衬底的有源矩阵区域上形成至少一个包括第一晶体硅膜的第一薄膜晶体管，而在驱动电路区域上形成至少一个包括第二晶体硅膜的第二薄膜晶体管。 每个第一薄膜晶体管的结晶膜含有能够促进比每个第二薄膜晶体管的晶体膜更高浓度的硅的结晶的催化剂元件。

公开(公告)号：US5650338A

公开(公告)日：1997-07-22

申请号：US216277

申请日：1994-03-23

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Hideki Uochi ,  Hiroki Adachi ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Hideki Uochi ,  Hiroki Adachi ,  Yasuhiko Takemura

IPC分类号： H01L21/336 ,  H01L21/84

CPC分类号： H01L27/1214 ,  H01L29/66757

摘要： In film forming of thin film semiconductors (TFTs), a gate electrode having an anodic-oxidizable material is formed on a substrate, and the surface of the gate electrode is oxidized by anodic oxidation in an electrolytic solution so that the surface of the gate electrode is coated with an insulating film. The doping is performed using the gate electrode and the anodic oxide film as a mask, to form a source and a drain region. Then, when the laminate is again dipped in an electrolytic solution, and a voltage is applied to the gate electrode so that a current curing produces in the laminate. During the current curing, a positive voltage is preferably applied to the gate electrode for N-channel TFTs and a negative voltage is preferably to the gate electrode for P-channel TFTs. After the doping, the source and the drain region is activated by laser annealing or the like, prior to the current curing.

摘要翻译： 在薄膜半导体（TFT）的成膜中，在基板上形成具有阳极氧化材料的栅电极，并且通过电解液中的阳极氧化使栅电极的表面氧化，使得栅电极的表面 涂有绝缘膜。 使用栅电极和阳极氧化膜作为掩模进行掺杂，以形成源区和漏区。 然后，当层叠体再次浸渍在电解液中时，向栅电极施加电压，使得层压体产生电流固化。 在电流固化期间，优选对N沟道TFT的栅电极施加正电压，对P沟道TFT优选施加负电压。 在掺杂之后，在目前的固化之前，源极和漏极区域被激光退火等激活。