摘要:
A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first magnetic region has a fixed first magnetic moment vector and the second magnetic region has a free second magnetic moment vector that is switchable between the same and opposite directions with respect to the fixed first magnetic moment vector. The second stacked structure is at least partly arranged in a lateral relationship with respect to the first stacked structure and includes a third magnetic region having a fixed third magnetic moment vector and the second magnetic region. The first and second structures are arranged between at least two electrodes in electrical contact therewith.
摘要:
A buried ground contact that connects the ground electrodes of transistors in adjacent memory cells that are separated by an isolation region is described. In some embodiments, the buried ground contact passes beneath the isolation region that separates cells to electrically connect the drain regions of transistors in adjacent cells. The buried ground may be connected to a metal ground line through via connections at intervals, outside of the active cell area. Use of this buried ground contact eliminates the need for individual ground connections to each cell, leading to a substantial reduction in cell size, and a consequent increase in cell density. The buried ground contacts of the invention can be used with a variety of devices, including MRAM and PCRAM devices.
摘要:
The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type comprises two magnetically coupled layers having a different Curie temperature. When cooling from a temperature above the Curie temperature TC1 of the first layer in an external magnetic field, the magnetization of the second layer is oriented by a second-order phase transition along the field direction of the external magnetic field. Upon further cooling below the Curie temperature TC2 of the second layer, the latter is oriented antiparallel with respect to the first layer as a result of the antiferromagnetic coupling between the two layers.
摘要翻译:本发明涉及一种用于制造用于MRAM存储器单元的参考层的方法和配备有这种类型的参考层的MRAM存储单元。 这种类型的参考层包括具有不同居里温度的两个磁耦合层。 当在外部磁场中从高于第一层的居里温度T SUB 1 SUP的温度冷却时,第二层的磁化取向为二阶相 沿着外部磁场的场方向的过渡。 当进一步冷却到低于第二层的居里温度T 2 C 2 O 2时,后者由于两者之间的反铁磁耦合而相对于第一层反向平行 层。
摘要:
A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.
摘要:
The present invention provides techniques for data storage. In one aspect of the invention, a semiconductor device is provided. The semiconductor device comprises at least one free layer and at least one fixed layer, with at least one barrier layer therebetween. At least one pinned magnetic layer is separated from the at least one free layer by at least one non-magnetic layer, the at least one pinned magnetic layer and non-magnetic layer being configured to cancel out at least a portion of a Neel coupling between the at least one free layer and the at least one fixed layer.
摘要:
The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type comprises two magnetically coupled layers having a different Curie temperature. When cooling from a temperature above the Curie temperature TC1 of the first layer in an external magnetic field, the magnetization of the second layer is oriented by a second-order phase transition along the field direction of the external magnetic field. Upon further cooling below the Curie temperature TC2 of the second layer, the latter is oriented antiparallel with respect to the first layer as a result of the antiferromagnetic coupling between the two layers.
摘要翻译:本发明涉及一种用于制造用于MRAM存储器单元的参考层的方法和配备有这种类型的参考层的MRAM存储单元。 这种类型的参考层包括具有不同居里温度的两个磁耦合层。 当在外部磁场中从高于第一层的居里温度T SUB 1 SUP的温度冷却时,第二层的磁化取向为二阶相 沿着外部磁场的场方向的过渡。 当进一步冷却到低于第二层的居里温度T 2 C 2 O 2时,后者由于两者之间的反铁磁耦合而相对于第一层反向平行 层。
摘要:
An improved scalable, resistive element for use in a semiconductor device that can be produced with a small feature size and precise resistance is provided by the present invention. The resistive element includes a base layer positioned on top of a metal line. A seed layer of is deposited on top of the base layer. A thin barrier layer of Al is deposited on top of the seed layer and oxidized. A non-magnetic metal layer is then deposited on top of the barrier layer. The base layer and the non-magnetic metal layer form electrodes on either side of the barrier layer. The barrier layer is thin enough that a tunneling current can travel between the electrodes. The resulting resistive element may be constructed with a high resistance and a very small feature size.