公开(公告)号：US20050222117A1

公开(公告)日：2005-10-06

申请号：US11007325

申请日：2004-12-09

申请人： Yih-Chih Hsu ,  Wen-Tyng Li ,  Jeffrey Lin ,  Bor-Iuan Jan ,  Tzu-I Wu ,  Jih-Shen Wen ,  Chi-Ming Yang

发明人： Yih-Chih Hsu ,  Wen-Tyng Li ,  Jeffrey Lin ,  Bor-Iuan Jan ,  Tzu-I Wu ,  Jih-Shen Wen ,  Chi-Ming Yang

IPC分类号： A61K31/409 ,  A61K31/555

CPC分类号： A61K31/409 ,  A61K41/0071 ,  A61K49/0036

摘要： The present invention relates to a method for treating liver cancer or oral cancer through photodynamic therapy, comprising administrating a subject in need thereof an effective amount of formula I, formula □, formula III or formula IV, which could release reactive oxygen species to inhibit the growth of cancer cells, which comprise with formulas as described in the specification, wherein R1 is an alkyl or an aldehyde with carbon atoms no more than 2; the cancer is liver cancer or oral cancer.

摘要翻译： 本发明涉及通过光动力疗法治疗肝癌或口腔癌的方法，包括给予有需要的受试者有效量的式I，式□，式III或式IV，其可释放活性氧以抑制 由说明书中所述的式所组成的癌细胞的生长，其中R1是碳原子数不超过2的烷基或醛; 癌症是肝癌或口腔癌。

公开(公告)号：US06686255B2

公开(公告)日：2004-02-03

申请号：US09918010

申请日：2001-07-30

申请人： Chi-Ming Yang ,  Fu-Liang Yang

发明人： Chi-Ming Yang ,  Fu-Liang Yang

IPC分类号： H01L2176

CPC分类号： H01L21/76213

摘要： Within a local oxidation of silicon (LOCOS) method for forming a silicon oxide isolation region, there is first amorphized areally completely at least a surface sub-layer portion of a silicon layer within an isolation region location within the silicon layer defined by an oxidation mask layer formed over the silicon layer, to form an amorphized silicon region within the isolation region location. Thus, when thermally oxidizing the silicon layer having formed thereover the oxidation mask layer to form at least in part from the amorphized silicon region a silicon oxide isolation region, the silicon oxide isolation region is formed with an attenuated bird's beak extension.

摘要翻译： 在用于形成氧化硅隔离区域的局部氧化硅（LOCOS）方法中，在由硅氧烷膜限定的硅层内的隔离区位置内，首先非晶化完全是硅层的表面亚层部分， 层，形成在硅层上，以在隔离区域内形成非晶化硅区域。 因此，当在氧化掩模层之上形成的硅层热氧化时，至少部分地从非晶硅区域形成氧化硅隔离区域，形成具有衰减的鸟嘴延伸部分的氧化硅隔离区域。

公开(公告)号：US06680688B1

公开(公告)日：2004-01-20

申请号：US10339347

申请日：2003-01-10

申请人： Shyh-Biau Jiang ,  Hung-Chuan Chien ,  Dong-Liang Lee ,  Chi-Ming Yang ,  Hsin-Ming Chang ,  Chuan-Fu Huang

发明人： Shyh-Biau Jiang ,  Hung-Chuan Chien ,  Dong-Liang Lee ,  Chi-Ming Yang ,  Hsin-Ming Chang ,  Chuan-Fu Huang

IPC分类号： G01S1386

CPC分类号： G01S11/16

摘要： A measuring system and method of detecting an object distance by transmission media with different wave velocities are described. The measuring system has a computer, a primary detector and a secondary detector. The primary detector is connected to the computer through bus communication and the secondary detector connected to the primary one through two different transmission media. The primary detector is able to receive separately a first signal and a second signal emitted simultaneously from the secondary detector through the transmission media. Moreover, the first signal has light-speed and the second signal has sound-speed. To calculate the distance between the objects which the primary and the secondary detector are attached respectively. The delay time of second signal and the wave velocity of the supersonic media are multiplied.

摘要翻译： 描述了一种通过不同波速的传输介质检测物体距离的测量系统和方法。 测量系统具有计算机，主检测器和辅助检测器。 主检测器通过总线通信连接到计算机，二次检测器通过两个不同的传输介质连接到主要检测器。 主检测器能够分别接收通过传输介质从次级检测器同时发射的第一信号和第二信号。 此外，第一信号具有光速，第二信号具有声速。 计算主检测器和次检测器分别连接的物体之间的距离。 第二信号的延迟时间和超音速介质的波速相乘。

公开(公告)号：US08173504B2

公开(公告)日：2012-05-08

申请号：US12758491

申请日：2010-04-12

申请人： Matt Yeh ,  Fan-Yi Hsu ,  Shun Wu Lin ,  Hui Ouyang ,  Chi-Ming Yang

发明人： Matt Yeh ,  Fan-Yi Hsu ,  Shun Wu Lin ,  Hui Ouyang ,  Chi-Ming Yang

IPC分类号： H01L21/8238

CPC分类号： H01L21/823828 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/28035 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard mask layer with limited thickness is applied on the treated polysilicon gate electrode layer. A tilt angle ion implantation is thus performing on the substrate after patterning the hard mask layer and the treated polysilicon gate electrode to from a gate structure.

摘要翻译： 公开了一种用于制造集成器件的方法。 在基板上设置多晶硅栅电极层。 在一个实施例中，在多晶硅栅极电极层上提供处理以在栅电极层中引入物质并在其中形成电中和部分。 然后，将具有有限厚度的硬掩模层施加在经处理的多晶硅栅极电极层上。 因此，在将硬掩模层和经处理的多晶硅栅电极图案化之后，在栅极结构上对基板进行倾斜角度离子注入。

公开(公告)号：US08105851B1

公开(公告)日：2012-01-31

申请号：US12889167

申请日：2010-09-23

申请人： Shao-Yen Ku ,  Chung-Ru Yang ,  Chi-Ming Yang

发明人： Shao-Yen Ku ,  Chung-Ru Yang ,  Chi-Ming Yang

IPC分类号： H01L21/66

CPC分类号： H01L21/31111 ,  H01L21/6708 ,  H01L21/67253

摘要： Provided is a method of removing a nitride material from a semiconductor wafer. The method includes monitoring a silicon concentration level in a chemical solution. The chemical solution may include a phosphoric acid. The method includes adjusting the silicon concentration level in response to the monitoring. The method includes heating the chemical solution. The method includes applying the heated chemical solution to a wafer surface in a manner so that a temperature of the heated chemical solution is within a predefined temperature range throughout the wafer surface. The method includes etching a nitride material of the wafer using the heated chemical solution.

摘要翻译： 提供从半导体晶片去除氮化物材料的方法。 该方法包括监测化学溶液中的硅浓度水平。 化学溶液可以包括磷酸。 该方法包括响应于监测调整硅浓度水平。 该方法包括加热化学溶液。 该方法包括将加热的化学溶液以使得加热的化学溶液的温度在整个晶片表面的预定温度范围内的方式施加到晶片表面。 该方法包括使用加热的化学溶液蚀刻晶片的氮化物材料。

公开(公告)号：US20100240224A1

公开(公告)日：2010-09-23

申请号：US12408427

申请日：2009-03-20

申请人： Hsin-Hsien Wu ,  Chun-Lin Chang ,  Chi-Ming Yang

发明人： Hsin-Hsien Wu ,  Chun-Lin Chang ,  Chi-Ming Yang

IPC分类号： H01L21/26 ,  F27D11/00

CPC分类号： H01L21/67109 ,  F27B17/0025

摘要： A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of heaters arranged and operative to heat the chamber. The heating system includes at least one top heater; at least one bottom heater, and a plurality of sidewall heaters spaced along the height of the reaction chamber to control temperature variations within in the chamber and promote uniform film deposit thickness on the wafers.

摘要翻译： 适用于晶圆化学气相沉积处理的半导体炉。 该炉包括具有顶部，底部，侧壁和用于可拆卸地保持一批垂直堆叠的晶片的内部空腔的热反应室。 提供一种加热系统，其包括布置并可操作以加热该腔室的多个加热器。 加热系统包括至少一个顶部加热器; 至少一个底部加热器和沿着反应室的高度间隔开的多个侧壁加热器，以控制室内的温度变化，并促进晶片上均匀的膜沉积厚度。

公开(公告)号：US20080194091A1

公开(公告)日：2008-08-14

申请号：US11705435

申请日：2007-02-13

申请人： Su-Horng Lin ,  Hsuan-Yih Chu ,  Chi-Ming Yang

发明人： Su-Horng Lin ,  Hsuan-Yih Chu ,  Chi-Ming Yang

IPC分类号： H01L21/31 ,  H01L21/3205

CPC分类号： H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3143 ,  H01L21/3144

摘要： A method for fabricating a nitrided oxide layer. A plasma reactor including a pedestal for supporting a substrate is provided. A substrate having an oxide layer thereon is placed on the pedestal. Nitridation of the oxide layer is performed by exposing the substrate to decoupled nitrogen plasma, wherein a positive bias is applied to the pedestal during the nitridation to reduce a potential drop between the plasma and the substrate surface.

摘要翻译： 一种氮化氧化物层的制造方法。 提供了包括用于支撑基板的基座的等离子体反应器。 其上具有氧化物层的基板放置在基座上。 通过将衬底暴露于解耦氮等离子体来进行氧化层的氮化，其中在氮化期间将正偏压施加到基座以减小等离子体和衬底表面之间的电位降。

公开(公告)号：US08404572B2

公开(公告)日：2013-03-26

申请号：US12370746

申请日：2009-02-13

申请人： Chun-Lin Chang ,  Hsin-Hsien Wu ,  Zin-Chang Wei ,  Chi-Ming Yang ,  Chyi-Shyuan Chern ,  Jun-Lin Yeh ,  Jih-Jse Lin ,  Jo-Fei Wang ,  Ming-Yu Fan ,  Jong-I Mou

发明人： Chun-Lin Chang ,  Hsin-Hsien Wu ,  Zin-Chang Wei ,  Chi-Ming Yang ,  Chyi-Shyuan Chern ,  Jun-Lin Yeh ,  Jih-Jse Lin ,  Jo-Fei Wang ,  Ming-Yu Fan ,  Jong-I Mou

IPC分类号： H01L21/425

CPC分类号： H01L22/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/12

摘要： An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.

摘要翻译： 一种装置包括被配置为执行离子注入工艺的处理室。 在处理室内设有冷却台板或静电吸盘。 冷却台板或静电卡盘构造成支撑半导体晶片。 冷却台板或静电卡盘具有多个温度区域。 每个温度区域包括在冷却压板或静电卡盘内或附近的至少一个流体导管。 提供至少两个冷却剂源，每个冷却剂源流体耦合到相应的一个流体导管，并且构造成在离子注入过程期间将分别不同的冷却剂供应到多个温度区中的相应的一个温度区。 冷却剂源分别包括不同的冷却或制冷装置。

公开(公告)号：US20100126531A1

公开(公告)日：2010-05-27

申请号：US12277839

申请日：2008-11-25

申请人： Shao-Yen KU ,  Chi-Ming Yang ,  Tzu-Jeng Hsu

发明人： Shao-Yen KU ,  Chi-Ming Yang ,  Tzu-Jeng Hsu

IPC分类号： B08B3/08 ,  B08B3/10 ,  B08B13/00

CPC分类号： B08B7/0021 ,  B08B3/08 ,  B08B3/10

摘要： A process of cleaning a semiconductor device fabrication equipment is provided. In one embodiment, the semiconductor device fabrication equipment is placed in a chamber; a fluid is introduced into the chamber; a pressure and temperature of the fluid is controlled to bring the fluid to a supercritical state; the semiconductor device fabrication equipment is cleaned by having the supercritical fluid contact the semiconductor device fabrication equipment; the supercritical fluid is removed from the chamber; and the semiconductor device fabrication equipment is removed from the chamber.

摘要翻译： 提供了一种清洁半导体器件制造设备的过程。 在一个实施例中，将半导体器件制造设备放置在腔室中; 将流体引入室中; 控制流体的压力和温度使流体达到超临界状态; 通过使超临界流体与半导体器件制造设备接触来清洁半导体器件制造设备; 将超临界流体从腔室中取出; 并且半导体器件制造设备从腔室中移除。

公开(公告)号：US07301430B1

公开(公告)日：2007-11-27

申请号：US11434159

申请日：2006-05-16

申请人： Chun-Kong Chan ,  Jeng-Shong Wang ,  Jin-Jiun Jiang ,  Chi-Ming Yang

发明人： Chun-Kong Chan ,  Jeng-Shong Wang ,  Jin-Jiun Jiang ,  Chi-Ming Yang

IPC分类号： H01F5/00

CPC分类号： H01F38/10

摘要： A high voltage transformer for controlling inductance leakage used for a multiple lamp driving system includes at least one wire frame, a first winding, a second winding, a first magnetic unit, and a second magnetic unit. There is a receiving space in the wire frame for receiving the first magnetic unit, and a first region and a second region is formed on its surface. The first winding and the second winding are individually wound at the first region and the second region. The second magnetic unit is covered on the side of the wire frame. On an appropriate location of the bottom of the second magnetic unit, a transverse beam extends. Thereby, the transverse beam fully separates the low voltage magnetic flux path produced on the first magnetic unit by the first winding and the second winding and the high voltage magnetic flux path produced by the AC.

摘要翻译： 用于控制用于多灯驱动系统的电感泄漏的高压变压器包括至少一个线架，第一绕组，第二绕组，第一磁单元和第二磁单元。 在线框架中具有用于接收第一磁性单元的接收空间，并且在其表面上形成第一区域和第二区域。 第一绕组和第二绕组在第一区域和第二区域单独地卷绕。 第二磁性单元被覆盖在线框架的侧面上。 在第二磁性单元的底部的适当位置，横梁延伸。 由此，横梁通过第一绕组和第二绕组以及由AC产生的高压磁通路完全分离在第一磁性单元上产生的低压磁通路径。