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公开(公告)号：US10801975B2
公开(公告)日：2020-10-13
申请号：US13887343
申请日：2013-05-05
IPC分类号： G01N23/201 , G01N21/84 , G03F7/20 , G01N21/956
摘要： Methods and systems for performing simultaneous optical scattering and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with optical scatterometry measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS and optical scatterometry measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and optical scatterometry measurements based on models that share at least one geometric parameter. The fitting can be performed sequentially or in parallel.
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公开(公告)号：US10732516B2
公开(公告)日：2020-08-04
申请号：US15861938
申请日：2018-01-04
摘要： Methods and systems for robust overlay error measurement based on a trained measurement model are described herein. The measurement model is trained from raw scatterometry data collected from Design of Experiments (DOE) wafers by a scatterometry based overlay metrology system. Each measurement site includes one or more metrology targets fabricated with programmed overlay variations and known process variations. Each measurement site is measured with known metrology system variations. In this manner, the measurement model is trained to separate actual overlay from process variations and metrology system variations which affect the overlay measurement. As a result, an estimate of actual overlay by the trained measurement model is robust to process variations and metrology system variations. The measurement model is trained based on scatterometry data collected from the same metrology system used to perform measurements. Thus, the measurement model is not sensitive to systematic errors, aysmmetries, etc.
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公开(公告)号：US10648796B2
公开(公告)日：2020-05-12
申请号：US15885504
申请日：2018-01-31
发明人： Noam Sapiens , Kevin A. Peterlinz , Alexander Buettner , Kerstin Purrucker , Andrei V. Shchegrov
IPC分类号： G01B11/24 , G03F7/20 , G01N21/21 , G01N21/956
摘要： Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.
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公开(公告)号：US10545104B2
公开(公告)日：2020-01-28
申请号：US15141453
申请日：2016-04-28
IPC分类号： G01N23/207
摘要： Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.
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85.发明申请公开(公告)号：US20200025554A1
公开(公告)日：2020-01-23
申请号：US15362741
申请日：2016-11-28
发明人： Antonio A. Gellineau , Alexander Kuznetsov , John J. Hench , Andrei V. Shchegrov , Stilian Ivanov Pandev
IPC分类号： G01B11/02
摘要： A system, method and computer program product are provided for selecting signals to be measured utilizing a metrology tool that optimizes the precision of the measurement. The technique includes the steps of simulating a set of signals for measuring one or more parameters of a metrology target. A normalized Jacobian matrix corresponding to the set of signals is generated, a subset of signals in the simulated set of signals is selected that optimizes a performance metric associated with measuring the one or more parameters of the metrology target based on the normalized Jacobian matrix, and a metrology tool is utilized to collect a measurement for each signal in the subset of signals for the metrology target. For a given number of signals collected by the metrology tool, this technique optimizes the precision of such measurements over conventional techniques that collect signals uniformly distributed over a range of process parameters.
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86.发明授权公开(公告)号：US10458912B2
公开(公告)日：2019-10-29
申请号：US15649843
申请日：2017-07-14
IPC分类号： G01B11/30 , G01N21/47 , G01N21/95 , G01B11/24 , G03F7/20 , G01N21/21 , G01N21/956 , G01N21/88
摘要： Methods and systems for performing optical, model based measurements of a small sized semiconductor structure employing an anisotropic characterization of the optical dispersion properties of one or more materials comprising the structure under measurement are presented herein. This reduces correlations among geometric parameters and results in improved measurement sensitivity, improved measurement accuracy, and enhanced measurement contrast among multiple materials under measurement. In a further aspect, an element of a multidimensional tensor describing the dielectric permittivity of the materials comprising the structure is modelled differently from another element. In a further aspect, model based measurements are performed based on measurement data collected from two or more measurement subsystems combined with an anisotropic characterization of the optical dispersion of the materials under measurement. In another aspect, the characterization of the optical dispersion of one or more materials comprising the structure under measurement depends on the geometry of the structure.
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公开(公告)号：US10151986B2
公开(公告)日：2018-12-11
申请号：US14790793
申请日：2015-07-02
摘要： Methods and systems for estimating values of parameters of interest of actual device structures based on optical measurements of nearby metrology targets are presented herein. High throughput, inline metrology techniques are employed to measure metrology targets located near actual device structures. Measurement data collected from the metrology targets is provided to a trained signal response metrology (SRM) model. The trained SRM model estimates the value of one or more parameters of interest of the actual device structure based on the measurements of the metrology target. The SRM model is trained to establish a functional relationship between actual device parameters measured by a reference metrology system and corresponding optical measurements of at least one nearby metrology target. In a further aspect, the trained SRM is employed to determine corrections of process parameters to bring measured device parameter values within specification.
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公开(公告)号：US10139352B2
公开(公告)日：2018-11-27
申请号：US14882370
申请日：2015-10-13
IPC分类号： G01N21/93 , G01N21/956
摘要： Methods and systems for measuring metrology targets smaller than the illumination spot size employed to perform the measurement are described herein. Collected measurement signals contaminated with information from structures surrounding the target area are reconstructed to eliminate the contamination. In some examples, measurement signals associated one or more small targets and one or more large targets located in close proximity to one another are used to train a signal reconstruction model. The model is subsequently used to reconstruct measurement signals from other small targets. In some other examples, multiple measurements of a small target at different locations within the target are de-convolved to estimate target area intensity. Reconstructed measurement signals are determined by a convolution of the illumination spot profile and the target area intensity. In a further aspect, the reconstructed signals are used to estimate values of parameters of interest associated with the measured structures.
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公开(公告)号：US10107765B2
公开(公告)日：2018-10-23
申请号：US15671661
申请日：2017-08-08
IPC分类号： G01N21/93 , G01N21/95 , G01N21/956 , G01N21/47
摘要： In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
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公开(公告)号：US20180299259A1
公开(公告)日：2018-10-18
申请号：US15950823
申请日：2018-04-11
IPC分类号： G01B11/14 , H01L21/66 , G01B11/26 , G03F7/20 , G01N21/47 , G01N21/95 , G01N21/21 , G01B11/06 , H05G2/00 , H01J37/28
摘要： Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.
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