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    MODEL BUILDING AND ANALYSIS ENGINE FOR COMBINED X-RAY AND OPTICAL METROLOGY
    1.
    发明申请
    MODEL BUILDING AND ANALYSIS ENGINE FOR COMBINED X-RAY AND OPTICAL METROLOGY 有权
    组合X射线和光学计量学的建模与分析发动机

    公开(公告)号：US20140019097A1

    公开(公告)日：2014-01-16

    申请号：US13935275

    申请日：2013-07-03

    Applicant: KLA-Tencor Corporation

    Inventor： Michael S. Bakeman ,  Andrei V. Shchegrov ,  Qiang Zhao ,  Zhengquan Tan

    IPC: G06F17/50

    CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F7/70608 ,  G03F7/70625

    Abstract: Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. Models of the response of the specimen to at least two different measurement technologies share at least one common geometric parameter. In some embodiments, a model building and analysis engine performs x-ray and optical analyses wherein at least one common parameter is coupled during the analysis. The fitting of the response models to measured data can be done sequentially, in parallel, or by a combination of sequential and parallel analyses. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data. For example, a geometric model of the specimen is restructured based on the fit between the response models and corresponding measurement data.

    Abstract translation: 样本的结构参数是通过将样本的响应拟合到通过不同测量技术在综合分析中收集的测量结果来确定的。 样本对至少两种不同测量技术的响应模型共享至少一个常见的几何参数。 在一些实施例中，模型构建和分析引擎执行x射线和光学分析，其中在分析期间耦合至少一个公共参数。 响应模型对测量数据的拟合可以顺序，并行或顺序和并行分析的组合进行。 在另一方面，响应模型的结构基于模型与相应测量数据之间的拟合质量而改变。 例如，基于响应模型和对应的测量数据之间的拟合来重组样本的几何模型。

    Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity
    2.
    发明授权
    Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity 有权

    公开(公告)号：US10458912B2

    公开(公告)日：2019-10-29

    申请号：US15649843

    申请日：2017-07-14

    Applicant: KLA-Tencor Corporation

    Inventor： Houssam Chouaib ,  Qiang Zhao ,  Andrei V. Shchegrov ,  Zhengquan Tan

    IPC: G01B11/30 ,  G01N21/47 ,  G01N21/95 ,  G01B11/24 ,  G03F7/20 ,  G01N21/21 ,  G01N21/956 ,  G01N21/88

    Abstract: Methods and systems for performing optical, model based measurements of a small sized semiconductor structure employing an anisotropic characterization of the optical dispersion properties of one or more materials comprising the structure under measurement are presented herein. This reduces correlations among geometric parameters and results in improved measurement sensitivity, improved measurement accuracy, and enhanced measurement contrast among multiple materials under measurement. In a further aspect, an element of a multidimensional tensor describing the dielectric permittivity of the materials comprising the structure is modelled differently from another element. In a further aspect, model based measurements are performed based on measurement data collected from two or more measurement subsystems combined with an anisotropic characterization of the optical dispersion of the materials under measurement. In another aspect, the characterization of the optical dispersion of one or more materials comprising the structure under measurement depends on the geometry of the structure.

    Measuring thin films on grating and bandgap on grating
    3.
    发明授权
    Measuring thin films on grating and bandgap on grating 有权

    公开(公告)号：US11555689B2

    公开(公告)日：2023-01-17

    申请号：US16848945

    申请日：2020-04-15

    Applicant: KLA-Tencor Corporation

    Inventor： Houssam Chouaib ,  Zhengquan Tan

    IPC: G01B11/06 ,  H01L21/66 ,  H01L29/49 ,  G01B15/02 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66

    Abstract: Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors. For example, the thin film stack may be a 1D film stack, a 2D film on grating, or a 3D film on grating. One or more effective medium dispersion models are created for the film stack. Each effective medium dispersion model can substitute for one or more layers. A thickness of one or more layers can be determined using the effective medium dispersion based scatterometry model. In an instance, three effective medium dispersion based scatterometry models are developed and used to determine thickness of three layers in a film stack.

    Measuring Thin Films on Grating and Bandgap on Grating
    4.
    发明申请
    Measuring Thin Films on Grating and Bandgap on Grating 审中-公开

    公开(公告)号：US20190063900A1

    公开(公告)日：2019-02-28

    申请号：US15800877

    申请日：2017-11-01

    Applicant: KLA-Tencor Corporation

    Inventor： Houssam Chouaib ,  Zhengquan Tan

    IPC: G01B11/06 ,  H01L21/66

    Abstract: Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors. For example, the thin film stack may be a 1D film stack, a 2D film on grating, or a 3D film on grating. One or more effective medium dispersion models are created for the film stack. Each effective medium dispersion model can substitute for one or more layers. A thickness of one or more layers can be determined using the effective medium dispersion based scatterometry model. In an instance, three effective medium dispersion based scatterometry models are developed and used to determine thickness of three layers in a film stack.

    Measuring Thin Films on Grating and Bandgap on Grating
    6.
    发明申请
    Measuring Thin Films on Grating and Bandgap on Grating 审中-公开

    公开(公告)号：US20200240768A1

    公开(公告)日：2020-07-30

    申请号：US16848945

    申请日：2020-04-15

    Applicant: KLA-Tencor Corporation

    Inventor： Houssam Chouaib ,  Zhengquan Tan

    IPC: G01B11/06 ,  G01B15/02 ,  H01L29/49 ,  H01L21/66

    Abstract: Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors. For example, the thin film stack may be a 1D film stack, a 2D film on grating, or a 3D film on grating. One or more effective medium dispersion models are created for the film stack. Each effective medium dispersion model can substitute for one or more layers. A thickness of one or more layers can be determined using the effective medium dispersion based scatterometry model. In an instance, three effective medium dispersion based scatterometry models are developed and used to determine thickness of three layers in a film stack.

    Measuring thin films on grating and bandgap on grating
    8.
    发明授权
    Measuring thin films on grating and bandgap on grating 有权

    公开(公告)号：US10663286B2

    公开(公告)日：2020-05-26

    申请号：US15800877

    申请日：2017-11-01

    Applicant: KLA-Tencor Corporation

    Inventor： Houssam Chouaib ,  Zhengquan Tan

    IPC: G01B11/06 ,  H01L21/66 ,  H01L29/49 ,  G01B15/02 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66

    Abstract: Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors. For example, the thin film stack may be a 1D film stack, a 2D film on grating, or a 3D film on grating. One or more effective medium dispersion models are created for the film stack. Each effective medium dispersion model can substitute for one or more layers. A thickness of one or more layers can be determined using the effective medium dispersion based scatterometry model. In an instance, three effective medium dispersion based scatterometry models are developed and used to determine thickness of three layers in a film stack.

    Model building and analysis engine for combined X-ray and optical metrology
    10.
    发明授权
    Model building and analysis engine for combined X-ray and optical metrology 有权

    公开(公告)号：US10013518B2

    公开(公告)日：2018-07-03

    申请号：US13935275

    申请日：2013-07-03

    Applicant: KLA-Tencor Corporation

    Inventor： Michael S. Bakeman ,  Andrei V. Shchegrov ,  Qiang Zhao ,  Zhengquan Tan

    IPC: G06F17/50 ,  G03F7/20 ,  G03F1/70

    CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F7/70608 ,  G03F7/70625

    Abstract: Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. Models of the response of the specimen to at least two different measurement technologies share at least one common geometric parameter. In some embodiments, a model building and analysis engine performs x-ray and optical analyses wherein at least one common parameter is coupled during the analysis. The fitting of the response models to measured data can be done sequentially, in parallel, or by a combination of sequential and parallel analyses. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data. For example, a geometric model of the specimen is restructured based on the fit between the response models and corresponding measurement data.

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