Method for constructing a blast furnace
    81.
    发明授权
    Method for constructing a blast furnace 失效
    高炉建造方法

    公开(公告)号:US4064616A

    公开(公告)日:1977-12-27

    申请号:US728373

    申请日:1976-09-30

    IPC分类号: C21B7/00 E04G21/14 E04G21/00

    CPC分类号: C21B7/00 Y10T29/49828

    摘要: A method for constructing a blast furnace, in which the blast furnace is designed to be divided into a plurality of blocks with a deck frame and other parts, and these blocks are individually assembled on the ground in a sequential order from the furnace top to the furnace bottom. The individual blocks are conveyed one after another onto a foundation, and the furnace top block is initially lifted up. In this manner, the successive blocks are lifted up in the described order and joined together at their ends to complete the blast furnace.

    摘要翻译: 一种用于构造高炉的方法,其中高炉被设计成具有甲板框架和其他部件的多个块,并且这些块以从炉顶到 炉底。 单个块被一个接一个地输送到基础上,并且炉顶块最初被提升。 以这种方式,连续的块以所述的顺序提升并在其端部连接在一起以完成高炉。

    Sawtooth wave form circuit
    82.
    发明授权
    Sawtooth wave form circuit 失效
    锯齿波形电路

    公开(公告)号:US4009398A

    公开(公告)日:1977-02-22

    申请号:US582192

    申请日:1975-05-30

    摘要: A sawtooth wave forming circuit has an input signal alternately applied to the bases of first and a second transistors forming a differential amplifier, and a circuit which permits flow of a current equal to or proportional to the current flowing in the collector of the first transistor is connected between the differential amplifier and a power source. A capacitor is provided between ground and the junction between the circuit and differential amplifier. With this arrangement, the charge-discharge cycle of the capacitor is controlled by means of the input signal.By making use of the sawtooth wave forming circuit constituted in this way, stable trapezoidal or triangular waves having only small fluctuations in the slopes of the sides of the wave can be formed.

    摘要翻译: 锯齿波形成电路具有交替施加到形成差分放大器的第一和第二晶体管的基极的输入信号,并且允许流过与在第一晶体管的集电极中流动的电流成比例的电流的电路是 连接在差分放大器和电源之间。 地之间和电路与差分放大器之间的结点之间提供电容。 通过这种布置,电容器的充放电循环通过输入信号进行控制。

    Bidirectional switch and switch circuit using the bidirectional switch
    83.
    发明授权
    Bidirectional switch and switch circuit using the bidirectional switch 有权
    双向开关和开关电路采用双向开关

    公开(公告)号:US08994443B2

    公开(公告)日:2015-03-31

    申请号:US13221523

    申请日:2011-08-30

    申请人: Kouichi Yamada

    发明人: Kouichi Yamada

    IPC分类号: H03K17/687 H03K17/06

    CPC分类号: H03K17/063 H03K2217/0054

    摘要: In a bidirectional switch using a metal-oxide-semiconductor field-effect transistor (MOSFET), the source terminal and the backgate terminal of the MOSFET are connected to each other via a transfer gate. A switch may be used between the connection point of the backgate terminal and the transfer gate of the MOSFET and the ground potential (where the MOSFET is an n-channel type) or supply potential (where the MOSFET is a p-channel type).

    摘要翻译: 在使用金属氧化物半导体场效应晶体管(MOSFET)的双向开关中,MOSFET的源极端子和背栅极端子经由传输栅极彼此连接。 可以在背栅端子的连接点和MOSFET的传输栅极和地电位(MOSFET为n沟道型)或电源电位(MOSFET为p沟道型)之间使用开关。

    Semiconductor device
    86.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08513716B2

    公开(公告)日:2013-08-20

    申请号:US13016481

    申请日:2011-01-28

    IPC分类号: H01L29/78

    CPC分类号: H01L27/105

    摘要: A MOS transistor includes a gate electrode formed in a grid pattern, source regions and drain regions each surrounded by the gate electrode, and a source metal wiring connected to the source regions via source contacts and a drain metal wiring connected to the drain regions via drain contacts. The source metal wiring and the drain metal wiring are disposed along one direction of the grid of the gate electrode. Each of the source regions and the drain regions is a rectangular form having its long side along the length direction of each metal wiring. The source metal wiring and the drain metal wiring are each formed in a zigzag manner in the length direction and are respectively connected to the source contacts and the drain contacts.

    摘要翻译: MOS晶体管包括形成为栅格图案的栅极电极,由栅电极围绕的源极区域和漏极区域以及经由源极触点连接到源极区域的源极金属布线和经由漏极连接到漏极区域的漏极金属布线 联系人 源金属布线和漏极金属布线沿着栅电极的栅格的一个方向设置。 源极区域和漏极区域中的每一个是沿着每个金属布线的长度方向具有长边的矩形形状。 源极金属布线和漏极金属布线分别在长度方向上以锯齿形形式分别连接到源极触点和漏极触点。

    TRAINING SYSTEM
    88.
    发明申请
    TRAINING SYSTEM 有权
    培训系统

    公开(公告)号:US20120142497A1

    公开(公告)日:2012-06-07

    申请号:US13311768

    申请日:2011-12-06

    IPC分类号: A63B24/00

    摘要: A training system for training of part of a trainee's body includes a training machine, a control device controlling the training machine, and a display unit displaying a game screen. The training machine imposes a load on the trainee, with an MR-fluid load generating unit using MR fluid, which has viscosity varying with a magnetic field strength. The load is calculated on the basis of a target load and a relationship between the current in the MR-fluid load generating unit and the load generated by the MR-fluid load generating unit. The control device produces the game screen in correspondence with the trainee's training motion detected by a displacement detection sensor, and makes the display unit display the game screen, while controlling the load in the training machine.

    摘要翻译: 用于训练学员身体的一部分的训练系统包括训练机,控制训练机的控制装置以及显示游戏画面的显示单元。 训练机对受训者施加负荷,使用MR流体负载产生单元,其使用具有随磁场强度变化的粘度的MR流体。 基于目标负荷和MR流体负荷产生单元中的电流与MR流体负载产生单元产生的负载之间的关系来计算负载。 控制装置根据由位移检测传感器检测到的受训者的训练动作产生游戏画面,并且在控制训练机器的负荷的同时使显示单元显示游戏画面。

    Memory
    89.
    发明授权
    Memory 有权
    记忆

    公开(公告)号:US08050075B2

    公开(公告)日:2011-11-01

    申请号:US12266332

    申请日:2008-11-06

    申请人: Kouichi Yamada

    发明人: Kouichi Yamada

    IPC分类号: G11C17/00 G11C8/00

    摘要: A memory is so formed that, in a first block and a second block each including a prescribed number of the bit lines arranged therein, positions of the bit lines simultaneously selected in the first and second blocks with reference to ends of the first and second blocks respectively are different from each other.

    摘要翻译: 存储器被形成为使得在包括布置在其中的规定数量的位线的第一块和第二块中,参考第一和第二块的端部在第一和第二块中同时选择的位线的位置 分别是不同的。

    POWER SUPPLY CIRCUIT
    90.
    发明申请
    POWER SUPPLY CIRCUIT 有权
    电源电路

    公开(公告)号:US20110175449A1

    公开(公告)日:2011-07-21

    申请号:US13008414

    申请日:2011-01-18

    IPC分类号: H02J1/10

    摘要: A power supply circuit generates the internal power supply voltage intVCC from a first power supply capable of supplying a first power supply voltage V1 and a second power supply capable of supplying a second power supply voltage V2, which is lower than the first power supply voltage V1. A first transistor TR1 is provided between the first power supply and an output node, whereas a second transistor TR2 is provided between the second power supply and the output node. A first supply unit supplies the inverted value of an output voltage of the first power supply or the inverted value of a voltage corresponding to the output voltage of the first power supply, to the gate input of the first transistor TR1. A second supply unit supplies the output voltage of the first power supply or the voltage corresponding to the output voltage of the first power supply, to the gate input of the second transistor TR2.

    摘要翻译: 电源电路从能够提供第一电源电压V1的第一电源和能够提供低于第一电源电压V1的第二电源电压V2的第二电源产生内部电源电压intVCC 。 第一晶体管TR1设置在第一电源和输出节点之间,而第二晶体管TR2设置在第二电源和输出节点之间。 第一供电单元将第一电源的输出电压的反相值或与第一电源的输出电压对应的电压的反相值提供给第一晶体管TR1的栅极输入。 第二供应单元将第一电源的输出电压或与第一电源的输出电压相对应的电压提供给第二晶体管TR2的栅极输入。