Abstract:
To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4≦x≦0.7 and 0.7≦y≦0.94.
Abstract translation:本发明提供一种压电薄膜元件,其特征在于,具有:基板上具有由组成式(K1-xNax)yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜,其中,压电薄膜的组成比x,y 由(K1-xNax)yNbO3表示,在0.4 @ x @ 0.7和0.7 @ y @ 0.94的范围内。
Abstract:
To provide a piezoelectric film element, including: a substrate; and a piezoelectric film having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 (0
Abstract:
There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
Abstract:
A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: which is used for preventive and/or therapeutic treatment of a disease caused by abnormal activity of tau protein kinase 1 such as a neurodegenerative diseases (e.g. Alzheimer disease).
Abstract:
A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
Abstract:
A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.
Abstract:
To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1−xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1−xNax)yNbO3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.
Abstract:
In a local softening point measuring apparatus and thermal conductivity measuring apparatus using a probe microscope as a base, environment of the prob˜ and a sample surface is set to 1/100 atmospheric pressure (103 Pa) or lower. Otherwise, a side surface of the probe is coated with a thermal insulation material having a thickness that enables thermal dissipation to be reduced to 1/100 or lower, to thereby reduce the thermal dissipation from the side surface of the probe, and exchange heat substantially only at the contacting portion between the probe and the sample surface.
Abstract:
The optical displacement-detecting mechanism has: a light source for irradiating a target for measurement with light; a light source-driving circuit for driving the light source; an optical detector made from a semiconductor for receiving light after the irradiation of the target for measurement by the light source and converting the light into an electric signal thereby to detect an intensity of light; and an amplifier including a current-voltage conversion circuit for performing current-to-voltage conversion on a detection signal of the optical detector with a predetermined amplification factor. In the optical displacement-detecting mechanism, a light source having a spectrum half width of 10 nm or larger is used, whereby the light source can be driven with an output power of 2 mW or larger without generating mode hop noise and optical feedback noise.
Abstract:
An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.