公开(公告)号：US09166142B2

公开(公告)日：2015-10-20

申请号：US13567157

申请日：2012-08-06

申请人： Fumimasa Horikiri ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

发明人： Fumimasa Horikiri ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

IPC分类号： H01L41/332 ,  H01L41/08 ,  H01L41/047 ,  H01G5/18 ,  H01L41/09 ,  H01L41/187

CPC分类号： H01L41/332 ,  H01G5/18 ,  H01L41/047 ,  H01L41/0477 ,  H01L41/0805 ,  H01L41/094 ,  H01L41/1873

摘要： A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K1-XNaX)NbO3 on a substrate, and dry-etching the piezoelectric film by using a low-pressure plasma including a fluorine system reactive gas.

摘要翻译： 压电薄膜元件的制造方法包括在基板上形成具有由（K1-XNaX）NbO3组成式表示的钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，并通过以下方式对压电膜进行干法蚀刻 使用包含氟系反应气体的低压等离子体。

公开(公告)号：US08860286B2

公开(公告)日：2014-10-14

申请号：US13577405

申请日：2011-02-15

申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto

发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto

IPC分类号： H01L41/187 ,  H01L41/08 ,  H01L41/316

CPC分类号： H01L41/0805 ,  H01L41/1873 ,  H01L41/316

摘要： Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.

摘要翻译： 公开了一种压电薄膜元件和压电薄膜器件，其具有改进的压电性能和高性能，并且可以以提高的产率制造。 压电薄膜元件（1）包括：基板（10）和布置在基板（10）上的压电薄膜（40），具有至少一个由通式（NaxKyLiz）NbO 3（0＆nlE）表示的晶体结构 ; x＆nlE; 1,0，nlE; y＆nlE; 1,0，nlE; z＆nlE; 0.2，x + y + z = 1），选自假立方晶体，六方晶体和正交晶体， 气体元素的比例为80ppm以下。

公开(公告)号：US08310136B2

公开(公告)日：2012-11-13

申请号：US12814544

申请日：2010-06-14

申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

IPC分类号： H01L41/187

CPC分类号： H01L41/316 ,  H01L41/1873

摘要： A piezoelectric thin film element, comprising a piezoelectric thin film lamination with at least a lower electrode, a piezoelectric thin film represented by a general formula (NaxKyLiz)NbO3 (0≦x 1≦, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and an upper electrode disposed on a substrate, wherein the piezoelectric thin film has a crystal structure of a pseudo-cubic crystal or a tetragonal crystal or an orthorhombic crystal, or has a composition in which one of these crystals exists or at least two or more of them coexist, and is preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and in the ratio of component (001) to component (111), volume fraction of the component (001) falls within a range of 60% or more and 100% or less, and the volume fraction of the component (111) falls within a range of 0% or more and 40% or less, in a case that the total of the component (001) and the component (111) is set to be 100%.

摘要翻译： 一种压电薄膜元件，包括具有至少一个下电极的压电薄膜层压体，由通式（NaxKyLiz）NbO 3表示的压电薄膜（0＆amp; nlE; x 1＆nlE; 0＆nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2 ，x + y + z = 1），以及设置在基板上的上电极，其中，所述压电薄膜具有假立方晶体或四方晶体或正交晶体的晶体结构，或者具有其中一个 存在这些晶体，或者其中至少两种以上共存，并且优选地定向为小于或等于这些晶体的两个轴的特定轴，并且以组分（001）与组分（111）的比例，体积分数 的组分（001）的含量在60％以上且100％以下的范围内，成分（111）的体积分数在0％以上且40％以下的范围内，在 组分（001）和组分（111）的总和被设置为100％。

公开(公告)号：US08232708B2

公开(公告)日：2012-07-31

申请号：US12816848

申请日：2010-06-16

申请人： Kenji Shibata ,  Hideki Sato ,  Kazufumi Suenaga ,  Akira Nomoto

发明人： Kenji Shibata ,  Hideki Sato ,  Kazufumi Suenaga ,  Akira Nomoto

IPC分类号： H01L41/04

CPC分类号： H01L41/094 ,  H01L41/1873 ,  H01L41/316

摘要： To stably provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. A piezoelectric thin film element includes: a piezoelectric thin film on a substrate, having an alkali niobium oxide series perovskite structure expressed by a general formula (K1-xNax)NbO3 (0

摘要翻译： 稳定地提供具有可以用PZT薄膜替代的压电特性的KNN压电薄膜元件。 压电薄膜元件包括：基底上的压电薄膜，其具有由通式（K1-xNax）NbO3（0

公开(公告)号：US20120025668A1

公开(公告)日：2012-02-02

申请号：US13137580

申请日：2011-08-26

申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Fumihito Oka ,  Hideki Sato

发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Fumihito Oka ,  Hideki Sato

IPC分类号： H01L41/047 ,  H01L41/113 ,  H01L41/09

CPC分类号： H01L41/047 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

摘要： A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer, and a top electrode on a substrate. The piezoelectric layer includes, as a main phase, a perovskite-type oxide. The bottom electrode has a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. The bottom electrode has a (111) preferential orientation in a direction perpendicular to the substrate.

摘要翻译： 压电薄膜元件包括底电极，压电层和衬底上的顶电极。 作为主相，压电体层包含钙钛矿型氧化物。 底部电极在算术平均粗糙度Ra中的表面粗糙度不大于0.86nm，均方根粗糙度Rms下的表面粗糙度不大于1.1nm。 底部电极在垂直于衬底的方向上具有（111）优先取向。

公开(公告)号：US20110006643A1

公开(公告)日：2011-01-13

申请号：US12816848

申请日：2010-06-16

申请人： Kenji SHIBATA ,  Hideki SATO ,  Kazufumi SUENAGA ,  Akira NOMOTO

发明人： Kenji SHIBATA ,  Hideki SATO ,  Kazufumi SUENAGA ,  Akira NOMOTO

IPC分类号： H01L41/04

CPC分类号： H01L41/094 ,  H01L41/1873 ,  H01L41/316

摘要： To stably provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. A piezoelectric thin film element includes: a piezoelectric thin film on a substrate, having an alkali niobium oxide series perovskite structure expressed by a general formula (K1-xNax)NbO3 (0

摘要翻译： 稳定地提供具有可以用PZT薄膜替代的压电特性的KNN压电薄膜元件。 压电薄膜元件包括：基底上的压电薄膜，其具有由通式（K1-xNax）NbO3（0

公开(公告)号：US20100320871A1

公开(公告)日：2010-12-23

申请号：US12819424

申请日：2010-06-21

申请人： Kazufumi SUENAGA ,  Kenji SHIBATA ,  Hideki SATO ,  Akira NOMOTO

发明人： Kazufumi SUENAGA ,  Kenji SHIBATA ,  Hideki SATO ,  Akira NOMOTO

IPC分类号： H01L41/04 ,  H01L41/18

CPC分类号： C04B35/495 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3251 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/316

摘要： To provide a piezoelectric thin film element capable of improving piezoelectric characteristics and realize a piezoelectric thin film device with high performance and high reliability, comprising: a substrate; and a piezoelectric thin film formed on the substrate by a sputtering method, with perovskite oxide expressed by (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0, 2, x+y+z=1) as a main phase, wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less.

摘要翻译： 为了提供能够改善压电特性并实现具有高性能和高可靠性的压电薄膜器件的压电薄膜元件，包括：衬底; （NaxKyLiz）NbO3（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0,2，x + y + z = 0）表示的由钙钛矿氧化物形成的基板上的压电薄膜， 1）作为主相，其中压电薄膜的内应力的绝对值为1.6GPa以下。

公开(公告)号：US20100314972A1

公开(公告)日：2010-12-16

申请号：US12797340

申请日：2010-06-09

申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Hideki Sato ,  Akira Nomoto

IPC分类号： H01L41/04

CPC分类号： H01L41/18

摘要： A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode laminated thereon, wherein the piezoelectric thin film has a crystal structure of any one of a pseudo-cubic crystal, a tetragonal crystal, or an orthorhombic crystal, or has a crystal structure of coexistence of at least two of the pseudo-cubic crystal, the tetragonal crystal, or the orthorhombic crystal, and in such crystal structures, there is a coexistence of (001) oriented crystal grains oriented in (001) direction, and (111) oriented crystal grains oriented in (111) direction, with an angle formed by at least one of the crystal axes of the crystal grains and a normal line of the substrate surface set to be in a range of 0° to 10°.

摘要翻译： 提供了一种压电薄膜元件，其包括在基板上：由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆lt; lE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z表示的压电薄膜 = 1）; 其上层叠有上电极，其中，所述压电薄膜具有假立方晶体，四方晶体或正交晶体中的任一种的晶体结构，或者具有至少两个所述伪晶体的晶体结构， 立方晶体，四方晶体或正交晶体，并且在这样的晶体结构中，（001）取向的（001）取向晶粒与（111）方向取向的（111）取向晶粒共存， 由晶粒的晶轴和衬底表面的法线中的至少一个形成的角度设定在0°至10°的范围内。

公开(公告)号：US06897503B2

公开(公告)日：2005-05-24

申请号：US10861500

申请日：2004-06-07

申请人： Miharu Otani ,  Jun Tanaka ,  Kazufumi Suenaga ,  Kiyoshi Ogata

发明人： Miharu Otani ,  Jun Tanaka ,  Kazufumi Suenaga ,  Kiyoshi Ogata

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/312 ,  H01L21/316 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/105 ,  H01L31/062

CPC分类号： H01L28/57 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/312 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/55 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In a semiconductor memory device having a capacitor layer comprising a dielectric film or a ferroelectric film, as an interlayer insulation film formed between the capacitor and a wiring layer formed at the upper part thereof or an insulation film which covers the wiring layer, a multilayered film is used which consists of a first insulation film and a second insulation film laid upon the other; the former being a lower layer and being formed of an organic film, and the latter being an upper layer and being formed of a hard-mask material.This makes it possible to prevent thin films comprised of a dielectric material or a ferroelectric material from any deterioration caused by the hydrogen and water contained in the interlayer insulation film and passivation film of the semiconductor memory device and also by the stress of these films.

摘要翻译： 在具有电介质膜或铁电体膜的电容器层的半导体存储器件中，作为形成在电容器和形成于其上部的布线层之间的层间绝缘膜或覆盖布线层的绝缘膜，具有多层膜 被使用，其由第一绝缘膜和彼此叠置的第二绝缘膜组成; 前者为下层，由有机膜形成，后者为上层，由硬掩模材料形成。 这使得可以防止由介电材料或铁电材料构成的薄膜由于半导体存储器件的层间绝缘膜和钝化膜中所含的氢和水引起的任何劣化，以及这些膜的应力。

公开(公告)号：US06623986B2

公开(公告)日：2003-09-23

申请号：US09984465

申请日：2001-10-30

申请人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

发明人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L28/57 ,  H01L27/1203

摘要： Along life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7/electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.

摘要翻译： 通过在铁氧体层7 /电极6的边界上的上保护电极和上电极8以及降解防止层上设置多个防结层，可以获得使用薄铁电体膜电容器作为记忆电容器的寿命铁电存储器件 或者提供在铁电层7 /上电极8的边界处减少改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且具有较低的铁电特性降低以达到 长寿命铁电存储器件。