公开(公告)号：US20160308118A1

公开(公告)日：2016-10-20

申请号：US15194875

申请日：2016-06-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

Abstract translation: 公开了磁存储单元，制造方法，半导体器件结构和存储器系统。 磁芯芯包括被配置为呈现垂直磁取向的至少一个磁区（例如，自由区或固定区），至少一个氧化物基区域，其可以是隧道结区域或氧化物封盖区域， 和至少一个磁性界面区域，其可以由铁（Fe）构成或由铁构成。 在一些实施例中，磁性界面区域与至少一个基于氧化物的区域相隔一个磁性区域。 磁性界面区域的存在增强了磁性电池芯的垂直磁各向异性（PMA）强度。 在一些实施例中，与缺少磁性界面区域的相同的磁性单元芯结构相比，PMA强度可以提高50％以上。

公开(公告)号：US20160276405A1

公开(公告)日：2016-09-22

申请号：US15168054

申请日：2016-05-29

Applicant: Micron Technology, Inc.

Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁性子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

公开(公告)号：US20150076485A1

公开(公告)日：2015-03-19

申请号：US14026627

申请日：2013-09-13

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Witold Kula

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region to reduce an oxygen concentration and, thus, an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

Abstract translation: 磁性电池包括中间氧化物区域（例如，隧道势垒）和次级氧化物区域之间的自由区域。 两个氧化物区域可以被配置为与自由区域引起磁各向异性（“MA”），从而提高自由区域的MA强度。 配置和配置接近次氧化物区域的吸气剂材料以从次氧化物区域除去氧气以降低氧气浓度，从而降低次级氧化物区域的电阻。 因此，次级氧化物区域对电池芯的电阻仅有最小的贡献。 因此，本公开的实施例使得能够实现高有效磁阻，低电阻面积乘积和低编程电压以及增强的MA强度。 还公开了制造方法，存储器阵列，存储器系统和电子系统。

公开(公告)号：US20140264663A1

公开(公告)日：2014-09-18

申请号：US13797185

申请日：2013-03-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

Abstract translation: 公开了磁存储单元，制造方法，半导体器件结构和存储器系统。 磁芯芯包括被配置为呈现垂直磁取向的至少一个磁区（例如，自由区或固定区），至少一个氧化物基区域，其可以是隧道结区域或氧化物封盖区域， 和至少一个磁性界面区域，其可以由铁（Fe）构成或由铁构成。 在一些实施例中，磁性界面区域与至少一个基于氧化物的区域相隔一个磁性区域。 磁性界面区域的存在增强了磁性电池芯的垂直磁各向异性（PMA）强度。 在一些实施例中，与缺少磁性界面区域的相同的磁性单元芯结构相比，PMA强度可以提高50％以上。