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    Diamond ultraviolet luminescent element
    82.
    发明授权
    Diamond ultraviolet luminescent element 失效
    钻石紫外线发光元件

    公开(公告)号：US06872981B1

    公开(公告)日：2005-03-29

    申请号：US10019275

    申请日：2000-06-29

    申请人： Kenji Horiuchi ,  Takefumi Ishikura ,  Satoshi Yamashita ,  Aki Kawamura ,  Kazuo Nakamura ,  Kenichi Nakamura ,  Takahiro Ide

    发明人： Kenji Horiuchi ,  Takefumi Ishikura ,  Satoshi Yamashita ,  Aki Kawamura ,  Kazuo Nakamura ,  Kenichi Nakamura ,  Takahiro Ide

    IPC分类号： H01L27/15 ,  H01L33/34 ,  H01L29/16

    CPC分类号： H01L33/34 ,  H01L27/156

    摘要： A diamond ultraviolet luminescent element (10) having a current-injection light-emitting diode structure includes a high-quality boron-doped p-type diamond crystal (semiconductor layer) (1) synthesized by the high pressure and high temperature method; a phosphorous-doped n-type diamond crystal (n-type semiconductor layer) (3) formed on the first diamond surface by the chemical vapor deposition; an electrode (5) formed on the surface of the n-type semiconductor layer (3); and an electrode (7) formed on the surface of the p-type semiconductor layer (1). The luminescence (235 nm) attributed to the recombination of free excitons resulting from current injection dominates in ultraviolet wavelength region (10).

    摘要翻译： 具有电流注入发光二极管结构的金刚石紫外线发光元件（10）包括通过高压高温法合成的高品质硼掺杂p型金刚石晶体（半导体层）（1）; 通过化学气相沉积在第一金刚石表面上形成的磷掺杂n型金刚石晶体（n型半导体层）（3）; 形成在所述n型半导体层（3）的表面上的电极（5）; 以及形成在p型半导体层（1）的表面上的电极（7）。 归因于由电流注入导致的游离激子重组的发光（235nm）在紫外线波长区域（10）中占主导地位。

    Burner for decomposing nonflammable materials
    84.
    发明授权
    Burner for decomposing nonflammable materials 失效
    用于分解不燃材料的燃烧器

    公开(公告)号：US06755645B2

    公开(公告)日：2004-06-29

    申请号：US10336040

    申请日：2003-01-03

    申请人： Atsuko Seo ,  Wataru Fujisaki ,  Toshiji Amano ,  Kenichi Nakamura ,  Kenichi Sugihara ,  Park Byoung-Sup ,  Jin Bingzhe

    发明人： Atsuko Seo ,  Wataru Fujisaki ,  Toshiji Amano ,  Kenichi Nakamura ,  Kenichi Sugihara ,  Park Byoung-Sup ,  Jin Bingzhe

    IPC分类号： F23D1400

    CPC分类号： F23G7/065 ,  F23G2209/142

    摘要： There is provided a burner for decomposing nonflammable materials, which is simple in structure and capable of thermally decomposing even a material which is relatively high in thermal decomposition temperature such as CF4 at as high efficiency as 99% or more. This burner comprises a nonflammable material-containing gas-introducing nozzle (40) which is disposed at one end of a cylindrical body (2) so as to enable the nonflammable material-containing gas to be injected around the center along the direction to the central axis (L) of the cylindrical body (2), and a plurality of oxidizing agent/fuel blow-off nozzles are disposed in a manner that these nozzles are positioned on and along circular lines which are coaxial with the central axis (L) of the cylindrical body (2). These blow-off nozzles (50) are inclined in such a degree as to enable flames (f) ejected therefrom to converge onto approximately the same point on the central axis of the cylindrical body (2).

    摘要翻译： 提供了一种用于分解不燃材料的燃烧器，其结构简单，并且即使是热分解温度较高的材料（如CF4）也能以99％以上的高效率进行热分解。 该燃烧器包括设置在圆筒体（2）的一端的不易燃材料的气体导入喷嘴（40），以使得不易燃的含材料气体能够沿着中心方向注入中心 圆柱体（2）的轴线（L），并且多个氧化剂/燃料吹出喷嘴以这样的方式设置，使得这些喷嘴位于沿着与中心轴线（L）同轴的圆形线 圆柱体（2）。 这些吹出喷嘴（50）的倾斜程度使得能够从其喷射的火焰（f）会聚到圆筒体（2）的中心轴上的大致相同的点上。

    Polycarbonate resin and process for producing the same
    85.
    发明授权
    Polycarbonate resin and process for producing the same 有权
    聚碳酸酯树脂及其制造方法

    公开(公告)号：US06316576B1

    公开(公告)日：2001-11-13

    申请号：US09477432

    申请日：2000-01-04

    申请人： Takayasu Fujimori ,  Kenichi Nakamura ,  Masukazu Hirata

    发明人： Takayasu Fujimori ,  Kenichi Nakamura ,  Masukazu Hirata

    IPC分类号： C08G6400

    CPC分类号： C08G64/0208 ,  C08G64/1608 ,  C08G64/30

    摘要： A polycarbonate resin obtainable by reaction of pentacyclopentadecanedimethanol with carbonic acid diester and a polycarbonate resin obtainable by reaction of pentacyclopentadecanedimethanol, an aromatic dihydroxy compound and carbonic acid diester having a low photoelastic constant and a good balance between refractive index and Abbe's number.

    摘要翻译： 通过五环十五烷基二甲醇与碳酸二酯反应得到的聚碳酸酯树脂和通过五环十五烷基二甲醇，芳族二羟基化合物和折射率与阿贝数之间良好平衡的碳酸二酯的反应得到的聚碳酸酯树脂。

    Process for preparing &agr;-hydroxycarboxylate
    86.
    发明授权
    Process for preparing &agr;-hydroxycarboxylate 有权
    α-羟基羧酸盐的制备方法

    公开(公告)号：US06310236B1

    公开(公告)日：2001-10-30

    申请号：US09274863

    申请日：1999-03-23

    申请人： Kenichi Nakamura ,  Futoshi Kawataka ,  Kazuhiro Yamada ,  Wataru Ueno

    发明人： Kenichi Nakamura ,  Futoshi Kawataka ,  Kazuhiro Yamada ,  Wataru Ueno

    IPC分类号： C07C6966

    CPC分类号： C07C67/20 ,  C07C69/675 ,  C07C69/68

    摘要： There is herein disclosed a process for efficiently preparing, from an &agr;-hydroxycarboxylic amide and an alcohol in an industrially advantageous manner, an &agr;-hydroxycarboxylate which is useful as any of raw materials for solvents, food additives, perfumes, various organic medicines and the like. According to the present invention, there is provided a process for preparing an &agr;-hydroxycarboxylate which comprises the step of reacting an &agr;-hydroxycarboxylic amide and an alcohol in the presence of a catalyst in a liquid phase, while an ammonia concentration in a reaction solution is maintained at 0.1% by weight or less by discharging generated ammonia as a gas into a gaseous phase.

    摘要翻译： 本文公开了一种用于以工业上有利的方式从α-羟基羧酸酰胺和醇有效制备可用作溶剂，食品添加剂，香料，各种有机药物的任何原料的α-羟基羧酸盐的方法，以及 根据本发明，提供了一种制备α-羟基羧酸盐的方法，其包括在液相中在催化剂存在下使α-羟基羧酸酰胺和醇反应的步骤，同时在 通过将产生的氨作为气体排放到气相中将反应溶液保持在0.1重量％以下。

    Semiconductor memory device
    87.
    发明授权
    Semiconductor memory device 失效
    动态型半导体存储器件

    公开(公告)号：US06262922B1

    公开(公告)日：2001-07-17

    申请号：US09542544

    申请日：2000-04-03

    申请人： Kenichi Nakamura ,  Takashi Ito ,  Yutaka Yoshitani ,  Tomokazu Kawase

    发明人： Kenichi Nakamura ,  Takashi Ito ,  Yutaka Yoshitani ,  Tomokazu Kawase

    IPC分类号： G11C700

    CPC分类号： G11C7/1057 ,  G11C7/1048 ,  G11C7/1051

    摘要： There is provided a DRAM capable of carrying out rapid data readout. The DRAM includes a memory cell array 1; a row decoder 3 for selectively driving word lines; a bit line sense amplifier 2 for controlling data, which are read out to a plurality of bit lines by driving the word lines, by a first sense amplifier activating signal to detect and amplify the data; a column selecting gate 5, which is driven by a column selecting signal generated behind the first sense amplifier activating signal, for connecting the selected bit line to a corresponding data line; and a data line sense amplifier, which is connected to the data line and which is controlled by a second sense amplifier activating signal generated behind the column selecting signal, the data line sense amplifier being associated with the bit line sense amplifier for detecting and amplifying data transmitted to the data line by the data selecting gate 5.

    摘要翻译： 提供了能够执行快速数据读出的DRAM。 DRAM包括存储单元阵列1; 用于选择性地驱动字线的行解码器3; 位线读出放大器2，用于通过第一读出放大器激活信号控制通过驱动字线而被读出到多个位线的数据，以检测和放大数据; 列选择门5，其由在第一读出放大器激活信号之后产生的列选择信号驱动，用于将所选择的位线连接到相应的数据线; 以及数据线读出放大器，其连接到数据线并且由在列选择信号之后产生的第二读出放大器激活信号控制，数据线读出放大器与位线读出放大器相关联，用于检测和放大数据 由数据选择门5发送到数据线。

    Manufacturing method and semiconductor device with low contact resistance between transparent electrode and pad electrode
    88.
    发明授权
    Manufacturing method and semiconductor device with low contact resistance between transparent electrode and pad electrode 失效
    在透明电极和焊盘电极之间具有低接触电阻的制造方法和半导体器件

    公开(公告)号：US6051883A

    公开(公告)日：2000-04-18

    申请号：US825319

    申请日：1997-04-01

    申请人： Kenichi Nakamura

    发明人： Kenichi Nakamura

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L23/485 ,  H01L23/52 ,  H01L27/12 ,  H01L29/786 ,  H01L23/48 ,  H01L29/76 ,  H01L29/94

    CPC分类号： H01L23/485 ,  H01L27/124 ,  H01L29/41733 ,  H01L2924/0002

    摘要： In a semiconductor device such as a thin film transistor a semiconductor region is formed and an insulating film is formed on the semiconductor region to have a contact hole extending to the semiconductor region. An electrically conductive metal layer is formed of aluminum to fill the contact hole. An electrically conductive protection layer is formed on the metal layer to prevent oxidation of the metal layer during manufacturing of the semiconductor device. Material of the protection layer is more difficult to be oxidized than aluminum. A transparent electrode is formed on the protection layer such that the electrode is electrically connected to the semiconductor region. The protection layer may be formed of titanium or a laminate layer of a titanium layer and a titanium nitride layer.

    摘要翻译： 在诸如薄膜晶体管的半导体器件中，形成半导体区域，并且在半导体区域上形成绝缘膜以具有延伸到半导体区域的接触孔。 导电金属层由铝形成以填充接触孔。 在金属层上形成导电保护层，以防止在制造半导体器件期间金属层的氧化。 保护层的材料比铝更难被氧化。 在保护层上形成透明电极，使得电极与半导体区域电连接。 保护层可以由钛或钛层和氮化钛层的层叠层形成。

    Semiconductor device
    89.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US5942784A

    公开(公告)日：1999-08-24

    申请号：US891558

    申请日：1997-07-11

    申请人： Takayuki Harima ,  Kenichi Nakamura ,  Mitsugi Ogura

    发明人： Takayuki Harima ,  Kenichi Nakamura ,  Mitsugi Ogura

    IPC分类号： H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H03K19/094 ,  H01L29/76 ,  H01L29/94

    CPC分类号： H01L27/0921

    摘要： A semiconductor device which achieves high-speed access and prevents the latch-up for any power inputting sequence by a plurality of power sources is disclosed. Where the chip voltage VDD is earlier inputted, an N well bias circuit 9 and a P well bias circuit 10 are activated, and an N-type well 12 and a P-type well 13 are biased respectively. After that, although the interface voltage VDDQ is inputted, the latch-up is not generated. On the other hand, where the interface voltage VDDQ is earlier inputted to a terminal 8, the N well bias circuit 9 and the P well bias circuit 10 are activated through a bypass circuit 15, and the N-type well 12 and the P-type well 13 are biased. Accordingly, although the chip voltage VDD is inputted after that, the latch-up is not generated.

    摘要翻译： 公开了一种实现高速访问并且防止由多个电源对闩锁进行任何功率输入序列的半导体器件。 在芯片电压VDD较早输入的地方，N阱偏置电路9和P阱偏置电路10被激活，N型阱12和P型阱13分别被偏置。 之后，虽然输入了接口电压VDDQ，但是不产生闭锁。 另一方面，在接口电压VDDQ较早地输入端子8的情况下，N阱偏压电路9和P阱偏置电路10通过旁路电路15被激活，N型阱12和P- 类型井13有偏差。 因此，尽管在此之后输入芯片电压VDD，但是不产生闩锁。

    Process for preparing high-molecular weight acrylamide polymer
    90.
    发明授权
    Process for preparing high-molecular weight acrylamide polymer 失效
    制备高分子量丙烯酰胺聚合物的方法

    公开(公告)号：US5668229A

    公开(公告)日：1997-09-16

    申请号：US747269

    申请日：1996-11-12

    申请人： Takashi Abe ,  Hiroshi Itoh ,  Manabu Tsuruta ,  Shoko Oyanagi ,  Kenichi Nakamura

    发明人： Takashi Abe ,  Hiroshi Itoh ,  Manabu Tsuruta ,  Shoko Oyanagi ,  Kenichi Nakamura

    IPC分类号： C08F2/10 ,  C08F4/40 ,  C08F20/56 ,  C08F22/38

    CPC分类号： C08F20/56

    摘要： A process for preparing an acrylamide polymer is herein disclosed which comprises the step of initiating polymerization in the presence of an oxidation-reduction system polymerization initiator comprising two or more kinds of oxidizing agents and a reducing agent. According to this process, the polymerization rate can be remarkably increased without bringing about a decrease in the molecular weight of the polymer, and hence, restriction on manufacturing facilities and apparatuses can be relieved and productivity can be remarkably enhanced, which permits a decrease in manufacturing cost.

    摘要翻译： 本文公开了一种制备丙烯酰胺聚合物的方法，其包括在包含两种或更多种氧化剂和还原剂的氧化还原体系聚合引发剂存在下引发聚合的步骤。 根据该方法，聚合速度可以显着提高，而不会导致聚合物的分子量降低，因此可以减轻制造设备和装置的限制，并且可以显着提高生产率，这允许制造的减少 成本。