公开(公告)号：US06872964B2

公开(公告)日：2005-03-29

申请号：US10644503

申请日：2003-08-20

申请人： Steven L. Naberhuis ,  Huel-Pel Kuo ,  Si-Ty Lam ,  Henryk Birecki

发明人： Steven L. Naberhuis ,  Huel-Pel Kuo ,  Si-Ty Lam ,  Henryk Birecki

IPC分类号： G11B9/00 ,  G11B9/10 ,  H01J1/308 ,  H01L29/06

CPC分类号： B82Y10/00 ,  G11B9/10 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1445 ,  H01J1/308

摘要： The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.

摘要翻译： 本公开涉及一种数据存储装置，包括适于发射电子束的多个电子发射器，每个具有平面发射表面的电子发射器和靠近电子发射器的存储介质，所述存储介质具有多个 能够具有表示数据的至少两个不同状态的存储区域，存储区域的状态可响应于由电子发射器发射的电子束的轰击而变化。

公开(公告)号：US20050062730A1

公开(公告)日：2005-03-24

申请号：US10665919

申请日：2003-09-19

申请人： Henryk Birecki

发明人： Henryk Birecki

IPC分类号： G06F3/033 ,  G09G5/00

CPC分类号： G06F3/03545 ,  G06F2203/0331

摘要： An ergonomic pointing device is disclosed. The ergonomic pointing device includes a holder mounted to a finger on a users hand and a pointing implement mounted to the holder. The user manipulates the ergonomic pointing device to bring the pointing implement into contact with a device to initiate an action in the device. Optionally, a holster can be connected with the holder to mount the pointing implement on the holder. The pointing implement can be movable in the holder and/or the holster. The holster can be removably connected with the holder. The ergonomic pointing device allows a user to interface with a device without having to use the hand to hold a stylus or the like. The holder can be mounted on the finger using an adhesive and portions of the ergonomic pointing device can be disposable while other portions can be recyclable.

摘要翻译： 公开了一种符合人体工程学的定位装置。 符合人体工程学的定位装置包括安装在用户手上的手指的支架和安装到支架的指示工具。 用户操纵符合人体工程学的定位设备使指示实体与设备接触以在设备​​中发起动作。 可选地，机架可以与保持器连接以将指示工具安装在支架上。 指示工具可以在保持器和/或皮套中移动。 皮套可以与支架可拆卸地连接。 符合人体工程学的定位装置允许用户与装置进行连接，而不必使用手来固定手写笔等。 保持器可以使用粘合剂安装在手指上，并且符合人体工程学的指示装置的部分可以是一次性的，而其他部分可以是可回收的。

公开(公告)号：US06864624B2

公开(公告)日：2005-03-08

申请号：US10697170

申请日：2003-10-30

申请人： Henryk Birecki ,  Vu Thien Binh ,  Si-ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

发明人： Henryk Birecki ,  Vu Thien Binh ,  Si-ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

IPC分类号： G11C11/42 ,  G11B9/00 ,  H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01J1/14 ,  H01J1/16 ,  H01L21/76

CPC分类号： B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

摘要： A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

摘要翻译： 公开了一种场致发射装置，其可以在超高密度存储系统内使用。 发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射 层。 此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

公开(公告)号：US20050029920A1

公开(公告)日：2005-02-10

申请号：US10932695

申请日：2004-09-01

申请人： Henryk Birecki ,  Vu Binh ,  Si-ty Lam ,  Huei Kuo ,  Steven Naberhuis

发明人： Henryk Birecki ,  Vu Binh ,  Si-ty Lam ,  Huei Kuo ,  Steven Naberhuis

IPC分类号： G11C11/42 ,  G11B9/00 ,  H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01K1/04 ,  H01J1/14 ,  H01J19/06 ,  H01L29/76 ,  H01L29/94

CPC分类号： B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

摘要： A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

摘要翻译： 公开了一种场致发射装置，其可以在超高密度存储系统内使用。 发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射 层。 此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

公开(公告)号：US20050001530A1

公开(公告)日：2005-01-06

申请号：US10891277

申请日：2004-07-14

申请人： Huei-Pei Kuo ,  Henryk Birecki ,  Si-Ty Lam ,  Steven Naberhuis

发明人： Huei-Pei Kuo ,  Henryk Birecki ,  Si-Ty Lam ,  Steven Naberhuis

IPC分类号： H01J1/312 ,  G11B9/00 ,  G11B9/10 ,  H01J3/02 ,  H01J3/18 ,  H01J1/02 ,  H01L29/06

CPC分类号： B82Y10/00 ,  G11B9/10 ,  G11B9/1409 ,  H01J3/02 ,  H01J2201/308

摘要： An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

摘要翻译： 电子源包括用于产生电子发射的平面发射区域和用于将电子发射聚焦成电子束的聚焦结构。

公开(公告)号：US06822380B2

公开(公告)日：2004-11-23

申请号：US09975296

申请日：2001-10-12

申请人： Xia Sheng ,  Henryk Birecki ,  Si-Ty Lam ,  Huei-Pei Kuo ,  Steven Louis Naberhuis

发明人： Xia Sheng ,  Henryk Birecki ,  Si-Ty Lam ,  Huei-Pei Kuo ,  Steven Louis Naberhuis

IPC分类号： H01J1312

CPC分类号： B82Y10/00 ,  H01J1/312

摘要： In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.

摘要翻译： 在基于金属绝缘体半导体或金属 - 绝缘体 - 金属发射体的电子发射器中，场致发射结构被封装在发射极结构内。 电子发射器可以包括形成在导电衬底上的导电衬底和电子供给层。 电子供应层，例如未掺杂的多晶硅，在其表面上形成突起。 可以控制突起的清晰度和密度。 在电子供给层和突起之上，可以形成绝缘体，从而包围突起。 可以在绝缘体上方形成顶部导电层。 封闭的突起对真空污染相对不敏感。 绝缘体的薄度允许在低的施加电压下产生突起处的高强度电场。 电场增强注入绝缘体，从而通过顶​​层导电层注入电子。 此外，电子束分散和发散最小化。

公开(公告)号：US06643248B2

公开(公告)日：2003-11-04

申请号：US09836124

申请日：2001-04-16

申请人： Steven L. Naberhuis ,  Huei-Pei Kuo ,  Si-Ty Lam ,  Henryk Birecki

发明人： Steven L. Naberhuis ,  Huei-Pei Kuo ,  Si-Ty Lam ,  Henryk Birecki

IPC分类号： G11B700

CPC分类号： B82Y10/00 ,  G11B9/10 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418

摘要： The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.